ZXMHC3A01T8 [DIODES]
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE; 互补30V增强型MOSFET H桥
| 型号： | ZXMHC3A01T8 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
| 文件： | 总10页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
P-Channel = V
= 30V : R
= -30V : R
= 0.12 ; I = 3.1A
D
(BR)DSS
(BR)DSS
DS(on)
DS(on)
= 0.21 ; I = -2.3A
D
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that com bines the benefits of
low on-resistance with fast switching speed. This
m akes them ideal for high efficiency, low voltage,
power m anagem ent applications.
SM8
FEATURES
S
S
4
• Low on-resistance
• Fast switching speed
• Low threshold
1
G
G
1
4
3
• Low gate drive
D , D
D , D
3 4
1
2
• Single SM-8 surface m ount package
G
G
2
APPLICATIONS
• Single phase DC fan m otor drive
S
S
3
2
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
PINOUT
ZXMHC3A01T8TA
ZXMHC3A01T8TC
7”
12m m
12m m
1,000 units
4,000 units
13”
DEVICE MARKING
• ZXMH
C3A01
Top View
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S E M IC O N D U C T O R S
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ZXMHC3A01T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
N-Ch a n n e l
30
P-channel
-30
UNIT
Dra in -s o u rce vo lta g e
V
V
DS S
Ga te -s o u rce vo lta g e
V
±20
±20
V
GS
(b )(d )
(b )(d )
(a )(d )
Continuous drain current (V = 10V; T =25°C)
I
3.1
-2.3
A
GS
A
D
(V = 10V; T =70°C)
2.5
-1.8
A
GS
A
(V = 10V; T =25°C)
2.7
-2.0
A
GS
A
(c)
Pu ls e d d ra in cu rre n t
I
I
I
14.5
2.3
-10.8
-2.2
A
A
DM
(b )
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
S
(c)
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
14.5
-10.8
A
S M
(a ) (d )
Po w e r d is s ip a tio n a t T =25°C
A
P
1.3
W
D
Lin e a r d e ra tin g fa cto r
10.4
1.7
m W/°C
W
(b ) (d )
Po w e r d is s ip a tio n a t T =25°C
A
P
D
Lin e a r d e ra tin g fa cto r
13.6
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
96
UNIT
(a ) (d )
J u n ctio n to a m b ie n t
R
R
°C/W
°C/W
J A
J A
(b ) (d )
J u n ctio n to a m b ie n t
73
NOTES
(a) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ10 sec.
(c) Repetitive rating on 50m m x 50m m x 1.6m m FR4, D= 0.02, pulse width 300S - pulse width lim ited by m axim um junction tem perature. Refer
to transient therm al im pedance graph.
(d) For device with one active die.
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S E M IC O N D U C T O R S
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ZXMHC3A01T8
CHARACTERISTICS
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S E M IC O N D U C T O R S
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ZXMHC3A01T8
N-channel
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
30
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DS S
I
I
1.0
100
3.0
V
=30V, V =0V
GS
DS S
DS
GS
V
=±20V, V =0V
DS
GS S
Ga te -s o u rce th re s h o ld vo lta g e
V
1.0
I = 250A, V =V
D DS GS
GS (th )
DS (o n )
S ta tic d ra in -s o u rce o n -s ta te
R
0.12
0.18
⍀
V
= 10V, I = 2.5A
D
GS
GS
DS
(1)
re s is ta n ce
⍀
V
V
= 4.5V, I = 2.0A
D
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
3.5
S
=4.5V, I = 2.5A
D
fs
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
190
38
pF
pF
pF
is s
V
= 25V, V =0V
GS
DS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
20
(2) (3)
S WITCHING
Tu rn -o n -d e la y tim e
Ris e tim e
t
t
t
t
1.7
2.3
6.6
2.9
3.9
0.6
0.9
ns
ns
d (o n )
V
R
= 15V, I = 2.5A
D
DD
r
≅ 6.0Ω, V = 10V
Tu rn -o ff d e la y tim e
Fa ll tim e
ns
G
GS
d (o ff)
f
ns
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
= 15V, V = 10V
GS
DS
g s
g d
I = 2.5A
D
(1)
Dio d e fo rw a rd vo lta g e
V
t
0.95
V
T =25°C, I = 1.7A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
17.7
13.0
ns
T =25°C, I = 2.5A,
rr
j
S
(3)
d i/d t=100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
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S E M IC O N D U C T O R S
4
ZXMHC3A01T8
N-channel
TYPICAL CHARACTERISTICS
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S E M IC O N D U C T O R S
5
ZXMHC3A01T8
N-channel
TYPICAL CHARACTERISTICS
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S E M IC O N D U C T O R S
6
ZXMHC3A01T8
P-channel
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
-30
V
A
nA
V
I = -250A, V =0V
D GS
(BR)DS S
I
I
-1.0
100
-3.0
0.21
0.33
V
= -30V, V =0V
GS
DS S
DS
GS
V
=±20V, V =0V
DS
GS S
Ga te -s o u rce th re s h o ld vo lta g e
V
-1.0
I = -250A, V =V
D DS GS
GS (th )
DS (o n )
S ta tic d ra in -s o u rce o n -s ta te
R
⍀
V
= -10V, I = -1.4A
D
GS
GS
DS
(1)
re s is ta n ce
⍀
V
V
= -4.5V, I = -1.1A
D
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
2.5
S
= -15V, I = -1.4A
D
fs
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
204
39.8
25.8
pF
pF
pF
V
= -15V, V =0V
is s
DS GS
f=1MHz
Ou tp u t ca p a cita n ce
o s s
rs s
Re ve rs e tra n s fe r ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -o n -d e la y tim e
Ris e tim e
t
t
t
t
1.2
2.3
ns
ns
ns
ns
nC
V
= -15V, I = -1A
DD D
d (o n )
R
≅ 6.0⍀, V = -10V
G
GS
r
Tu rn -o ff d e la y tim e
Fa ll tim e
12.1
7.5
d (o ff)
f
To ta l g a te ch a rg e
2.6
V
= -15V, V = -5V
DS GS
I = -1.4A
D
To ta l g a te ch a rg e
Q
Q
Q
5.2
0.7
0.9
nC
nC
nC
V
= -15V, V = -10V
g
DS GS
I = -1.4A
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
D
g s
g d
(1)
Dio d e fo rw a rd vo lta g e
V
-0.85 -0.95
V
T =25°C, I = -1.1A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
t
19
15
ns
T =25°C, I = -0.95A,
j S
rr
(3)
d i/d t=100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE E - APRIL 2004
S E M IC O N D U C T O R S
7
ZXMHC3A01T8
P-channel
TYPICAL CHARACTERISTICS
DRAFT ISSUE E - APRIL 2004
S E M IC O N D U C T O R S
8
ZXMHC3A01T8
P-channel
TYPICAL CHARACTERISTICS
DRAFT ISSUE E - APRIL 2004
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ZXMHC3A01T8
PACKAGE OUTLINE
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Max
Millim eters
Inches
DIM
DIM
Min
-
Max
1.7
0.1
-
Typ.
Min
Typ.
Min
Max
Typ.
Min
Max
Typ.
A
A1
b
-
-
0.067
-
-
e1
e2
-
-
-
-
4.59
-
-
-
-
0.1807
0.02
-
-
0.7
-
0.008 0.004
1.53
0.0602
-
-
0.0275 He
6.7
0.9
-
7.3
-
-
-
0.264 0.287
-
-
c
0.24
6.3
3.3
0.32
6.7
3.7
0.009 0.013
0.248 0.264
0.130 0.145
-
-
-
Lp
␣
0.035
-
15°
-
D
E
-
15°
-
-
-
-
-
-

-
10°
10°
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DRAFT ISSUE E - APRIL 2004
S E M IC O N D U C T O R S
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