ZXMN2A02X8TC [DIODES]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | ZXMN2A02X8TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2A02X8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= 20V; R
= 0.02
I = 7.8A
D
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that com bines the benefits of low on-resistance with fast switching speed. This
m a ke s the m ide a l for high e fficie ncy, low volta ge , powe r m a na ge m e nt
applications.
MSOP8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Managem ent Functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A02X8TA
ZXMN2A02X8TC
7”
12m m
12m m
1000 units
4000 units
13”
DEVICE MARKING
Top View
•
ZXMN
2A02
ISSUE 2 - J ANUARY 2005
1
ZXMN2A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT
20
UNIT
V
Dra in -S o u rce Vo lta g e
Ga te S o u rce Vo lta g e
V
V
DS S
GS
20
V
Co n tin u o u s Dra in Cu rre n t V =10V; T =25°C (b )
I
7.8
6.3
6.2
A
GS
A
D
V
=10V; T =70°C (b )
GS
A
V
=10V; T =25°C (a )
GS
A
Pu ls e d Dra in Cu rre n t (c)
I
I
I
39
3.1
39
A
A
A
DM
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e ) (c)
S
S M
Po w e r Dis s ip a tio n a t T =25°C (a )
A
Lin e a r De ra tin g Fa cto r
P
1.1
8.8
W
m W/°C
D
Po w e r Dis s ip a tio n a t T =25°C (b )
A
Lin e a r De ra tin g Fa cto r
P
1.67
13.4
W
m W/°C
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
113
UNIT
°C/W
°C/W
J u n ctio n to Am b ie n t (a )
J u n ctio n to Am b ie n t (b )
R
R
θJ A
θJ A
74.5
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр10 secs.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.05, pulse width 10s - pulse width lim ited by m axim um junction tem perature. Refer to
Transient Therm al Im pedance graph. Refer to transient therm al im pedance graph.
ISSUE 2 - J ANUARY 2005
2
ZXMN2A02X8
CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
RDS(on)
Limited
10
1
DC
1s
100ms
100m
10m
10ms
1ms
Single Pulse
amb=25°C
100µs
T
0.0
100m
V
Drain-So1urce Voltage1(0V)
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
DSS afe Operating Area
120
110
100
90
80
70
60
50
40
30
20
10
0
T
amb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10 100 1k
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - J ANUARY 2005
3
ZXMN2A02X8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS .
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
20
V
I =250µA, V =0V
(BR)DS S
D
GS
I
1
V
=20V, V =0V
µA
DS S
DS GS
I
100 n A
V
V
=Ϯ12V, V =0V
GS S
GS DS
Ga te -S o u rce Th re s h o ld Vo lta g e
V
0.7
I =250µA, V = V
GS (th )
DS (o n )
DS
GS
D
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce
(1)
R
0.02
0.04
V
V
=4.5V, I =11A
D
Ω
Ω
GS
GS
=2.5V, I =8.4A
D
Fo rw a rd Tra n s co n d u cta n ce (1)(3)
DYNAMIC (3)
g
27
S
V
=10V,I =11A
D
fs
DS
In p u t Ca p a cita n ce
C
C
C
1900
356
p F
p F
p F
is s
V
=10 V, V =0V,
DS
GS
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
f=1MHz
o s s
rs s
218
t
t
t
t
7.9
10
n s
d (o n )
n s
r
V
R
=10V, I =1A
D
DD
=6.0Ω, V =4.5V
G
GS
Tu rn -Off De la y Tim e
Fa ll Tim e
33.3
13.6
18.6
5.2
n s
d (o ff)
f
n s
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
Q
Q
Q
n C
n C
n C
g
V
=10V,V =4.5V,
GS
DS
I =11A
g s
g d
D
4.9
V
0.85
0.95
V
T =25°C, I =11.5A,
J S
S D
V
=0V
GS
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
t
16.3
7.8
n s
T =25°C, I =2.1A,
J F
d i/d t= 100A/µs
rr
Q
n C
rr
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - J ANUARY 2005
4
ZXMN2A02X8
TYPICAL CHARACTERISTICS
T = 150°C
T = 25°C
7V
7V
2.5V
2.5V
2V
10
1
10
2V
1.5V
V
GS
1
1.5V
V
GS
1V
0.1
0.1
0.1
V
1
10
0.1
1
10
Drain-Source Voltage (V)
V Drain-Source Voltage (V)
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
= 4.5V
IDG=S 11A
10
1
RDS(on)
T = 150°C
T = 25°C
V
GS(th)
V
= V
IDG=S 250uA
DS
V
DS = 10V
0.1
1
2
-50
0
50
100
150
V
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
1.5V
T = 25°C
T = 150°C
10
1
10
V
GS
2V
T = 25°C
1
2.5V
4V
7V
0.1
0.01
0.1
0.2
0.6
1.0
1.2
1
10
V
0.4Source-Drain0V.8oltage (V)
ID Drain Current (A)
SD
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 2 - J ANUARY 2005
5
ZXMN2A02X8
TYPICAL CHARACTERISTICS
3000
2500
4.5
V
GS = 0V
ID = 11A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
f = 1MHz
2000
C
ISS
1500
1000
500
0
COSS
C
RSS
VDS = 10V
0.1
1
10
0
5
10
15
20
V - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
DS
Capacitance v Drain-Source Voltage
ISSUE 2 - J ANUARY 2005
6
ZXMN2A02X8
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
Millim etres
Inches
MIN
Millim etres
DIM
Inches
MIN
DIM
MIN
ᎏ
MAX
1.10
0.15
0.40
0.23
3.10
MAX
0.043
0.006
0.016
0.009
0.122
MIN
MAX
MAX
0.122
A
A1
B
ᎏ
e
E
0.65 BSC
0.0256 BSC
0.05
0.25
0.13
2.90
0.002
0.010
0.005
0.114
2.90
3.10
0.114
H
L
4.90 BSC
0.193 BSC
C
0.40
0°
0.70
6°
0.016
0°
0.028
6°
D
⍜°
© Zetex Sem iconductors plc 2005
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ISSUE 2 - J ANUARY 2005
7
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