ZXMN3B14FTA [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE;
| 型号： | ZXMN3B14FTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE 栅极驱动 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3B14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V
=30V : R
(
)=0.08 ; I =3.5A
(BR)DSS
DS on D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
PACKAGE
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B14FTA
7”
8mm
8mm
3,000 units
ZXMN3B14FTC
13”
10,000 units
DEVICE MARKING
• 3B4
ISSUE 2 - JANUARY 2006
1
SEMICONDUCTORS
ZXMN3B14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
V
V
DSS
GS
Ϯ12
(b)
(b)
(a)
Continuous Drain Current @ V = 4.5V; T =25°C
I
3.5
2.9
2.9
A
A
A
GS
A
D
@ V = 4.5V; T =70°C
GS
A
@ V = 4.5V; T =25°C
GS
A
(c)
Pulsed Drain Current
I
I
I
16
A
A
DM
S
(b)
Continuous Source Current (Body Diode)
2.4
(c)
Pulsed Source Current (Body Diode)
16
A
SM
(a)
Power Dissipation at T =25°C
A
P
1
W
D
Linear Derating Factor
8
1.5
mW/°C
W
(b)
Power Dissipation at T =25°C
A
P
D
Linear Derating Factor
12
mW/°C
°C
Operating and Storage Temperature Range
T , T
-55 to +150
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
125
UNIT
°C/W
°C/W
(a)
Junction to Ambient
R
R
⍜JA
⍜JA
(b)
Junction to Ambient
83
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
ISSUE 2 - JANUARY 2006
2
SEMICONDUCTORS
ZXMN3B14F
TYPICAL CHARACTERISTICS
ISSUE 2 - JANUARY 2006
3
SEMICONDUCTORS
ZXMN3B14F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
30
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
I
I
1
V
= 30V, V =0V
GS
DSS
DS
GS
100
V
=Ϯ12V, V =0V
DS
GSS
Gate-Source Threshold Voltage
Static Drain-Source On-State
V
R
0.7
I = 250A, V =V
D DS GS
GS(th)
DS(on)
0.080
0.140
⍀
V
= 4.5V, I = 3.1A
D
GS
GS
DS
(1)
Resistance
⍀
V
V
= 2.5V, I = 2.2A
D
(1) (3)
Forward Transconductance
g
8.5
S
= 15V, I = 3.1A
D
fs
(3)
DYNAMIC
Input Capacitance
C
C
C
568
101
66
pF
pF
pF
iss
V
= 15V, V =0V
GS
DS
Output Capacitance
oss
rss
f=1MHz
Reverse Transfer Capacitance
(2) (3)
SWITCHING
Turn-On-Delay Time
Rise Time
t
t
t
t
3.6
4.9
17.3
9.8
6.7
1.4
1.8
ns
ns
ns
ns
nC
nC
nC
d(on)
V
= 15V, V = 4.5V
GS
DD
r
I = 1A
D
Turn-Off Delay Time
Fall Time
d(off)
f
R
≅ 6.0⍀
G
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Q
Q
Q
g
V
= 15V, V = 4.5V
DS
GS
gs
gd
I = 3.1A
D
(1)
Diode Forward Voltage
V
t
0.82
0.95
V
T =25°C, I = 3.1A,
j S
SD
V
=0V
GS
(3)
Reverse Recovery Time
10.8
4.54
ns
T =25°C, I = 1.6A,
rr
j
F
(3)
di/dt=100A/s
Reverse Recovery Charge
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JANUARY 2006
4
SEMICONDUCTORS
ZXMN3B14F
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JANUARY 2006
5
SEMICONDUCTORS
ZXMN3B14F
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - JANUARY 2006
6
SEMICONDUCTORS
ZXMN3B14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
INCHES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MIN
MAX
0.120
0.055
0.043
0.021
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
MAX
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
0.013
0.0004
0.083
0.018
L
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
G
1.90 NOM
10Њ TYP
© Zetex Semiconductors plc 2005
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Telephone (44) 161 622 4444
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These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - JANUARY 2006
7
SEMICONDUCTORS
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