ZXMP10A17G [DIODES]
100V P-CHANNEL ENHANCEMENT MODE MOSFET; 100V P沟道增强型MOSFET
| 型号： | ZXMP10A17G |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：635K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMP10A17G
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
Features and Benefits
•
•
•
•
Fast switching speed
ID
V(BR)DSS
RDS(on)
Low gate drive
TA = 25°C
Low input capacitance
-2.4
-2.1
350mΩ @ VGS= -10V
450mΩ @ VGS= -6.0V
Qualified to AEC-Q101 Standards for High Reliability
-100V
Mechanical Data
•
•
Case: SOT223
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
•
•
•
Motor control
•
Weight: 0.112 grams (approximate)
DC-DC Converters
Power management functions
Uninterrupted power supply
SOT223
D
G
S
Equivalent Circuit
Top View
Pin Out - Top View
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMP10A17GTA
See below
7
12
1,000
Marking Information
ZXMP = Product Type Marking Code, Line 1
10A17 = Product Type Marking Code, Line 2
ZXMP
10A17
1 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Symbol
VDSS
Value
-100
±20
Unit
V
V
VGS
(Note 2)
-2.4
-1.9
-1.7
-9.4
-4.5
-9.4
Continuous Drain current
Pulsed Drain current
A
VGS = 10V
GS= 10V
TA = 70°C (Note 2)
(Note 1)
(Note 3)
ID
A
A
A
V
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note3 )
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
2.0
16
3.9
31
Unit
(Note 1)
W
mW/°C
Power dissipation
Linear derating factor
PD
(Note 2)
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 2)
62.5
32.0
9.8
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 4)
Rθ
JL
-55 to 150
TJ, TSTG
Notes:
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t ≤ 10 sec.
3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Thermal Characteristics
RDS(on)
10
1
2.0
1.6
1.2
0.8
0.4
0.0
Limited
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
Tamb=25°C
100µs
1
10
100
0
20
40 60 80 100 120 140 160
-VDS Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
3 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-100
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
ID = -250μA, VGS = 0V
-0.5
±100
μA
nA
VDS = -100V, VGS = 0V
IGSS
⎯
V
GS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-2.0
-4.0
0.350
0.450
⎯
V
VGS(th)
⎯
⎯
ID = -250μA, VDS = VGS
V
V
GS = -10V, ID = -1.4A
GS = -6V, ID = -1.2A
Static Drain-Source On-Resistance (Note 5)
Ω
RDS (ON)
⎯
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
2.8
-0.85
33
S
V
gfs
VSD
trr
⎯
⎯
VDS = -15V, ID = -1.4A
IS = -1.7A, VGS = 0V
-0.95
⎯
ns
nC
IS = -1.5A, di/dt = 100A/μs
48
Qrr
⎯
⎯
424
36.6
29.8
7.1
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -50V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
VGS = -6.0V
10.7
1.7
Qg
VDS = -50V
ID = -1.4A
Qgs
Qgd
tD(on)
tr
VGS = -10V
3.8
3.0
3.5
ns
VDD = -50V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
13.4
7.2
ns
tD(off)
tf
ns
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
4 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Typical Characteristics
10V
10V
T = 150°C
T = 25°C
10
7V
7V
10
1
5V
4.5V
4V
5V
1
4.5V
3.5V
0.1
4V
0.1
3V
0.01
1E-3
-VGS
-VGS
0.01
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = -10V
ID = - 1.4A
1
0.1
RDS(on)
T = 150°C
T = 25°C
VGS(th)
VGS = VDS
-VDS = 10V
ID = -250uA
0.01
3
4
5
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
100
4V
10
T = 25°C
-VGS
T = 150°C
4.5V
10
1
1
5V
T = 25°C
0.1
7V
10V
0.01
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
5 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Typical Characteristics - continued
10
8
600
500
VGS = 0V
f = 1MHz
CISS
400
6
300
COSS
4
200
VDS = -50V
ID = -1.4A
2
100
CRSS
0
0.1
0
1
10
100
0
2
4
6
8
10
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
0.2F
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
Pulse width Ͻ1S
Duty factor 0.1%
tr
td(of
tr
td(on)
)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
6 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
Package Outline Dimensions
DIM
Millimeters
Min
-
0.02
1.55
0.66
2.90
0.23
Inches
DIM
Millimeters
Inches
Max
1.80
0.10
1.65
0.84
3.10
0.33
Min
-
Max
0.071
0.004
0.0649
0.033
0.122
0.013
Min
6.30
Max
6.70
Min
0.248
Max
0.264
A
A1
A2
b
b2
C
D
e
e1
E
E1
L
0.0008
0.0610
0.026
0.114
0.009
2.30 BSC
4.60 BSC
6.70
0.0905 BSC
0.181 BSC
7.30
3.70
-
0.264
0.130
0.355
0.287
0.146
-
3.30
0.90
Suggested Pad Layout
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
mm
inches
1.5
0.059
2.3
0.091
7 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXMP10A17G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
8 of 8
www.diodes.com
November 2009
© Diodes Incorporated
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
相关型号：
ZXMP10A17KTA
Power Field-Effect Transistor, 2.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, TO-252, DPAK-3
DIODES
©2020 ICPDF网 联系我们和版权申明