ZXTP25100BFHTA [DIODES]
100V, SOT23, PNP medium power transistor; 100V ， SOT23 ， PNP中等功率晶体管
| 型号： | ZXTP25100BFHTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V, SOT23, PNP medium power transistor |
| 文件： | 总6页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP25100BFH
100V, SOT23, PNP medium power transistor
Summary
BV
BV
> -140V, BV
> -100V
(BR)CEO
(BR)CEX
(BR)ECX
> -7V ;
I
= -2A
C(cont)
V
< -130mV @ -1A
CE(sat)
CE(sat)
R
= 108mꢀ typical
P = 1.25W
D
Complementary part number ZXTN25100BFH
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
140V forward blocking voltaget
7V reverse blocking voltage
Applications
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Pinout - top view
Motor drive
Relay, lamp, and solenoid drive
Ordering information
Device
Reel size
(inches)
Tape width
Quantity per reel
ZXTP25100BFHTA
7
8mm
3,000
Device marking
056
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTP25100BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
-140
V
CBO
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
V
V
V
V
-140
-100
-7
V
V
V
V
A
A
CEX
CEO
ECX
EBO
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
-7
(b)
I
-2
C
Continuous collector current
Peak pulse current
I
-5
CM
(a)
P
P
P
P
0.73
5.84
W
mW/°C
Power dissipation at T =25°C
Linear derating factor
D
D
D
D
A
(b)
(c)
(d)
1.05
8.4
W
mW/°C
Power dissipation at T =25°C
A
Linear derating factor
1.25
9.6
W
mW/°C
Power dissipation at T =25°C
A
Linear derating factor
1.81
14.5
W
mW/°C
Power dissipation at T =25°C
A
Linear derating factor
Operating and storage temperature range
T , T
-55 to 150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
R
171
°C/W
ꢁJA
ꢁJA
ꢁJA
ꢁJA
Junction to ambient
(b)
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
(c)
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP25100BFH
Characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTP25100BFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
AMB
Parameter
Symbol Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown BV
voltage
-140
-140
-165
V
I = -100ꢂA
C
CBO
CEX
Collector-emitter
breakdown voltage
(forward blocking)
BV
-165
V
I = -100ꢂA,
C
R
< 1kꢀ or
BE
-0.25V < V < 1V
BE
(*)
Collector-emitter
breakdown voltage (base
open)
BV
BV
-100
-7
-125
8.2
V
V
CEO
ECX
I = -10mA
C
Emitter-collector
breakdown voltage
(reverse blocking)
I = -100ꢂA,
E
R
< 1kꢀ or
BC
-0.25V < V < 0.25V
BC
Emitter-base breakdown
voltage
BV
-7
-8.2
<-1
V
I = -100ꢂA
E
EBO
Collector cut-off current
I
I
-50
-20
nA
ꢂA
V
V
= -112V
= -112V, T
CBO
CB
CB
= 100°C
AMB
Collector emitter cut-off
current
-
-100
nA
V
= -112V;
CEX
CE
R
< 1kꢀ or
BE
-0.25V < V < 1V
BE
Emitter cut-off current
I
<-1
-60
-50
-90
nA
V
= -5.6V
EB
EBO
(*)
(*)
Collector-emitter
saturation voltage
V
mV
CE(sat)
I = -0.5A, I = -50mA
C
B
-240
-100
-215
-350
-130
-295
mV
mV
mV
mV
I = -0.5A, I = -10mA
C
B
(*)
I = -1A, I = -100mA
C
B
(*)
(*)
I = -2A, I = -200mA
C
B
Base-emitter saturation
voltage
V
V
-900 -1000
BE(sat)
BE(on)
FE
I = -2A, I = -200mA
C
B
(*)
Base-emitter turn-on
voltage
-830
-950
300
mV
I = -2A, V = -2V
C
CE
(*)
Static forward current
transfer ratio
h
100
55
200
105
25
I = -10mA, V = -2V
C
CE
(*)
I = -1A, V = -2V
C
CE
(*)
15
I = -2A, V = -2V
C
CE
Transition frequency
Output capacitance
f
200
MHz I = -100mA, V = -5V
T
C
CE
f = 100MHz
(*)
C
15
25
pF
OBO
V
V
= -10V, f = 1MHz
CB
CC
Turn-on time
Turn-off time
NOTES:
t
t
31
ns
ns
= -10V, I = -500mA,
C
(on)
(off)
I
= I = -50mA
B2
B1
384
(*) Measured under pulsed conditions. Pulse width ꢃ 300ꢂs; duty cycle ꢃ2%.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25100BFH
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
ZXTP25100BFH
Package outline - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
-
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
-
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
-
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
相关型号：
ZXTP25140BFHQTA
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon,
DIODES
©2020 ICPDF网 联系我们和版权申明