GBJ10005 [DIOTECH]
GLASS PASSIVATED BRIDGE RECTIFIER; 玻璃钝化整流桥型号: | GBJ10005 |
厂家: | DIOTECH COMPANY. |
描述: | GLASS PASSIVATED BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:825K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GBJ10005 THRU GBJ1010
GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 10.0 Ampere
FEATURES
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Glass passivated chip junction
Reliable low cost construction utilizing molded
GBJ
plastic technique
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Ideal for printed circuit board
Low reverse leakage current
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Low forward voltage drop
High surge current capabiliy
MECHANICAL DATA
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Case:Molded plastic, GBJ
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Terminals
:
Terminals: Leads solderable per MIL-STD-202
method 208 guaranteed
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Epoxy: UL 94V-0 rate flame retardant
Mounting Position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
GBJ
GBJ GBJ GBJ GBJ GBJ GBJ
Symbols
Units
Parameter
10005 1001 1002 1004 1006 1008 1010
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum DC Blocking Voltage
100 200 400 600 800 1000
10
Maximum Average Forward Rectified Current with
Heatsink at TC = 100 OC
I(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half-Sine
-Wave superimposed on rated load (JEDEC Method)
IFSM
VF
IR
170
1.1
A
V
Maximum Forward Voltage at 5.0 A DC and 25 OC
Maximum Reverse Current at TA = 25OC
at Rated DC Blocking Voltage TA = 125OC
10
µA
500
Typical Junction Capacitance 1)
CJ
55
1.4
pF
OC/W
OC
Typical Thermal Resistance 2)
RθJC
Operating and Storage Temperature Range
TJ,TS
-55 to +150
1) Measured at 1 MHz and applied reverse voltage of 4 VDC.
2) Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate
heatsink.
GBJ10005 THRU GBJ1010
RATINGS AND CHARACTERISTIC CURVES
12
10
10
8
with heatsink
TJ = 25°C
1.0
6
4
2
0.1
without heatsink
Resistive or
Inductive load
Pulse width = 300µs
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
100
10
1
Tj = 25°C
f = 1MHz
Single half-sine-wave
(JEDEC method)
TJ = 150°C
120
80
40
0
1
100
10
NUMBER OF CYCLES AT 60 Hz
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 3 Maximum Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
1000
TJ = 150°C
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
相关型号:
GBJ10005-TP
Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN
MCC
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