HER603 [DIOTECH]
HIGH EFFICIENT SILICON RECTIFIER; 高产高效硅整流
| 型号： | HER603 |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | HIGH EFFICIENT SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER601 THRU HER608
HIGH EFFICIENT SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 6.0 Ampere
FEATURES
R-6
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Ultra fast switching for high efficiency
Low reverse leakage
●
●
●
1.0 (25.4)
MIN.
High forward surge current capability
High temperature soldering guaranteed:
0.360 (9.1)
0.340(8.6)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
Case: R-6 molded plastic body
1.0 (25.4)
MIN.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.052 (1.3)
0.048 (1.2)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.072 ounce, 2.05 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
HER
601
HER
602
HER
603
HER
604
HER
605
HER
606
HER
607
HER
608
Characteristic
Symbol
Unit
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
50
35
100
70
200
140
300
210
400
280
600
420
800
560
1000
700
V
R
V
R(RMS)
RMS Reverse Voltage
V
V
A
Average Rectified Output Current
(Note 1)
O
I
6.0
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
200
A
FM
Forward Voltage
@IF = 6.0A
V
1.0
1.3
1.7
V
Peak Reverse Current
@TA = 25°C
10.0
100
RM
I
µA
At Rated DC Blocking Voltage @TA = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
rr
t
50
75
65
nS
pF
°C
°C
j
C
100
j
T
-65 to +150
-65 to +150
STG
T
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER601 THRU HER608
RATINGS AND CHARACTERISTIC CURVES
100
8
Single phase half wave
Resistive or Inductive load
HER601-HER604
HER605
10
6
4
2
HER606 - HER608
1.0
0.1
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.01
0
0.6
1.0
1.4
1.8
0
25
50
75
100 125
150 175
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
200
100
1000
8.3ms single half
sine-wave
HER601 - HER605
100
HER606 - HER608
10
10
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
(-)
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
-1.0A
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
相关型号：
HER603-G
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, R-6, 2 PIN
SENSITRON
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