MBRF20100CT [DIOTECH]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | MBRF20100CT |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：997K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF2020CT THRU MBRF20100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 20.0 Ampere
FEATURES
● Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
● Dual rectifier construction, positive center tap
● Metal silicon junction, majority carrier conduction
● Low power loss, high efficiency
ITO-220AB
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.406(10.3)
.386(9.8)
.118(3.0)
.106(2.7)
● Guardring for overvoltage protection
● For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
.610(15.5)
.571(14.5)
.157(4.0)
.142(3.6)
MECHANICAL DATA
● Case: JEDEC ITO-220AB molded plastic body
● Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
● High temperature soldering guaranteed:
250oC/10 seconds, 0.25" (6.35mm) from case
● Polarity: As marked
● Mounting Position: Any
● Mounting Torque: 10 in-lbs maximum
● Weight: 0.08 ounce, 2.24 grams
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
PIN 1 -
PIN 3 -
+
PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MBRF
2020CT
MBRF
2045CT
MBRF
2030CT 2040CT
MBRF
MBRF
MBRF
MBRF
MBRF
Characteristic
Symbol
Unit
2050CT 2060CT 2080CT 20100CT
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RWM
20
14
30
21
40
28
45
32
50
35
60
42
80
56
100
70
V
R
V
R(RMS)
RMS Reverse Voltage
V
V
A
O
Average Rectified Output Current @TC = 95°C
I
20
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
FSM
I
200
A
VFM
Forward Voltage
@IF = 10A
0.55
0.75
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
0.5
100
RM
I
mA
j
Typical Junction Capacitance (Note 1)
C
1100
pF
°C
j
STG
Operating and Storage Temperature Range
T, T
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBRF2020CT THRU MBRF20100CT
RATINGS AND CHARACTERISTIC CURVES
FIG. 1 – FORWARD CURRENT DERATING CURVE
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
300
20.0
15.0
10.0
PULSE WIDTH 8.3 ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
200
250
150
100
5.0
0
SINGLE PHASE HALF WAVE
60Hz RESISTIVE OR
INDUCTIVE LOAD
50
0
1
10
20
50
100
25
75
100
125
150
175
50
2
5
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE (℃)
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL REVER CHARACTERISTICS
100
10
1000
MBRF2020CT~2060CT
MBRF2080CT~20100CT
MBRF2020CT~
MBRF2040CT
100
10
MBRF2050CT~
MBRF2060CT
TJ=125℃
MBRF2080CT
MBRF20100CT
1.0
1.0
0.1
TJ = 25°C
0.1
PULSE WIDTH 300us
2% DUTY CYCLE
TJ=25℃
0.01
0
20
40
60
80
100
120
140
0.9 1.0
0.6 0.7 0.8
0.1 0.2 0.3 0.4 0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 – TYPICAL JUNCTION CAPACITANCE
1000
MBRF2020CT~
MBRF2040CT
MBRF2050CT~
MBRF20100CT
100
TJ = 25°C f = 1 MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE ,VOLTS
相关型号：
MBRF20100CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
LITTELFUSE
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