MUR440 [DIOTECH]
SUPER FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流
| 型号： | MUR440 |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | SUPER FAST RECOVERY SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR420 THRU MUR460
SUPER FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 200 to 600 Volts
Forward Current - 4.0 Ampere
FEATURES
DO-201AD
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Super fast switching for high efficiency
Low reverse leakage
●
●
●
1.0 (25.4)
MIN.
High forward surge current capability
High temperature soldering guaranteed:
0.220(5.6)
0.197(5.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
1.0 (25.4)
MIN.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052(1.3)
0.048(1.2)
DIA.
Weight:0.04 ounce, 1.10 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Type Number
Units
Symbol
VRRM
VRMS
VDC
MUR420
200
MUR440
400
MUR460
600
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
140
280
420
Maximum DC Blocking Voltage
200
400
600
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length (See Fig. 1)
4.0
A
A
V
I(AV)
IFSM
VF
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
125
70
Maximum Instantaneous Forward Voltage
@ 4.0A
0.89
1.28
Maximum DC Reverse Current @ TC=25 oC
at Rated DC Blocking Voltage @ TC=125 oC
(Note 4)
5.0
150
10
250
uA
uA
IR
Maximum Reverse Recovery Time ( Note 1 )
TRR
25
25
50
50
nS
pF
Typical Junction Capacitance ( Note 2 )
TJ = 25 oC (Fig. 5)
Cj
65
28
Maximum Forward Recovery Time TFR
(IF=1.0A, di/dt = 100A/us, Rev. to 1.0V)
TFR
nS
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
R
oC/W
oC
oC
θJA
TJ
-65 to +150
-65 to +150
TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MUR420 THRU MUR460
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
CURVE
SURGE CURRENT
6.0
150
L = 1/2"
125
100
75
4.0
2.0
PCB with 1.5" x 1.5"
copper pads
50
0
25
0
50
100
150
200
1
10
100
AMBIENT TEMPERATURE. (OC)
NUMBER OF CYCLES AT 60HZ
FIG.3- TYPICAL INSTANTANEOUS
FIG.4- TYPICSL REVERSE CHARACTERISTICS
FORWARD CHARACTERISTICS
100
1000
Tj=250C
100
10
10
Tj=1000C
1
1
0.1
Tj=250C
0.1
0.01
0.001
0.01
0
40
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
60
80
100
0
0.4
0.8
1.2
1.6
2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE PERLEG
1000
Tj=250C
f=1.0MHz
Vsig=50m Vp-p
100
10
0.1
1
10
100
REVERSE VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
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