MURF1015 [DIOTECH]

SUPER FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流
MURF1015
型号: MURF1015
厂家: DIOTECH COMPANY.    DIOTECH COMPANY.
描述:

SUPER FAST RECOVERY SILICON RECTIFIER
超快速恢复硅整流

超快速恢复二极管
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中文:  中文翻译
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MURF1005 THRU MURF1060  
SUPER FAST RECOVERY SILICON RECTIFIER  
Reverse Voltage - 50 to 600 Volts  
Forward Current - 10.0 Ampere  
FEATURES  
ITO-220AC  
Glass Passivated Die Construction  
4.5± 0.2  
+0.2  
-0.1  
10.2± 0.2  
3.1  
Super-Fast Switching  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
PIN  
1
2
.
.
4.0± 0.3  
1.4± 0.1  
0.6± 0.1  
MECHANICAL DATA  
2.6± 0.2  
Case: ITO-220AC, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
0.6± 0.1  
5.0± 0.1  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Dimensions in millimeters  
PIN 1 +  
PIN 3 -  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
MURF  
1020  
MURF  
1005  
MURF  
1010  
MURF  
1015  
MURF  
1030  
MURF  
1040  
MURF  
1060  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
RWM  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
600  
V
V
R
V
R(RMS)  
V
RMS Reverse Voltage  
140  
280  
420  
V
A
Average Rectified Output Current  
10.0  
O
I
@TC = 105°C  
Non-Repetitive Peak Forward Surge  
Current 8.3ms Single half sine-wave  
superimposed on rated load (JEDEC Method)  
150  
A
FSM  
I
Forward Voltage  
@IF = 10.0A  
VFM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
10  
500  
RM  
I
µA  
rr  
Reverse Recovery Time (Note 1)  
t
35  
70  
50  
50  
nS  
pF  
°C  
j
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
C
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
MURF1005 THRU MURF1060  
RATINGS AND CHARACTERISTIC CURVES  
10  
8
100  
1005 - 1020  
1030 - 1040  
10  
6
4
1060  
1.0  
0.1  
2
0
Pulse width = 300µs  
2% duty cycle  
0
50  
100  
150  
0.2  
0.6  
1.0  
1.4  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
180  
150  
120  
90  
400  
8.3 ms single half-sine-wave  
JEDEC method  
1005 - 1020  
100  
10030 - 1060  
60  
30  
0
10  
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  

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