UF5401 [DIOTECH]
ULTRA FAST RECOVERY SILICON RECTIFIER; 超快速恢复硅整流
| 型号： | UF5401 |
| 厂家： | 
DIOTECH COMPANY. |
| 描述： | ULTRA FAST RECOVERY SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：627K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UF5400 THRU UF5408
ULTRA FAST RECOVERY SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 3.0 Ampere
FEATURES
DO-201AD
●
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
●
Ultra fast switching for high efficiency
Low reverse leakage
●
●
●
1.0 (25.4)
MIN.
High forward surge current capability
High temperature soldering guaranteed:
0.220(5.6)
0.197(5.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
1.0 (25.4)
MIN.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052(1.3)
0.048(1.2)
DIA.
Weight:0.04 ounce, 1.10 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
UF UF
UF
UF
UF
UF
UF UF
UF
SYMBOLS
UNITS
Characteristic
5400 5401 5402 5403 5404 5405 5406 5407 5408
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50 100 200 300 400 500 600 800 1000
V
V
V
VRRM
VRMS
VDC
35
70 140 210 280 350 420 560 700
50 100 200 300 400 500 600 800 1000
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=55 C
Peak forward surge current
I(AV)
3.0
A
150.0
IFSM
VF
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
A
Maximum instantaneous forward voltage at 3.0A
1.0
1.30
1.70
75
V
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
100.0
µA
IR
ns
trr
50
Typical junction capacitance (NOTE 2)
CJ
R JA
pF
C/W
C
45
20.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
UF5400 THRU UF5408
RATINGS AND CHARACTERISTIC CURVES
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
3.0
2.4
1.8
1.2
0.6
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
120
90
60
30
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
TJ=100 C
1
0.1
1
UF5400-UF5404
UF5405-UF5408
TJ=25 C
0.1
0.01
0.01
0.2
0.6
1.0
1.4
1.8 2.0
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
10
1
TJ=25 C
20
0.1
0.01
0.1
1
10
100
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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