ABS125K [DIOTEC]
Bridge Rectifier Diode,;
| 型号： | ABS125K |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Bridge Rectifier Diode, IOT 二极管 |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ABS125K, ABS250K
ABS125K, ABS250K
Protectifiers® – LowVF Bridge Rectifier with Overvoltage Protection
Protectifiers® – LowVF-Brückengleichrichter mit Überspannungsschutz
Version 2015-02-05
Nominal current – Nennstrom
1.5 A
Alternating input voltage
Eingangswechselspannung
125V, 250 V
0.2±0.1
4.0±0.2
6.2+0.2
5.0±0.2
Plastic case
ABS
Kunststoffgehäuse
+
Weight approx.
Gewicht ca.
0.1 g
Type
Typ
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.6±0.1
~
~
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Green Molding
Halogen-Free
Dimensions - Maße [mm]
Features
Vorteile
Low VF for reduced power losses
High inrush surge capability IFSM
High reverse robustness ERSM
Niedriges VF für reduzierte Verluste
Hoher Einschalt-Stromstoß IFSM
Hohe sperrseitige Robustheit ERSM
Höchste ESD-Klasse 3B
Highest ESD rating class 3B
UL Recognized Product – File E175067
UL-anerkanntes Produkt – File Nr. E175067
Maximum ratings and Charactistics (TJ = 25°C)
Grenz- und Kennwerte (TJ = 25°C)
Type
Typ
Alternating input voltage
Max. rev. current
Breakdown voltage
Abbruch-Spannung
Forward voltage
Eingangswechselspannung Max. Sperrstrom 1)
Fluss-Spannung 1)
VVRMS [V]
< 140
ID [µA] @ VWM [V]
VBR [V]
> 210
> 400
@ IT [mA]
VF [V] @ IF [A]
ABS125K
ABS250K
< 5
< 5
190
380
1
1
< 0.95
< 0.95
1.5
1.5
< 280
Max. average forward rectified current
Dauergrenzstrom
TA = 50°C
IFAV
1.5 A 2)
15 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
IFSM
i2t
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
TA = 25°C
59/65 A
17.4 A2s
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
RthA
< 60 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
1
2
Valid per diode – Gültig pro Diode
Mounted on P.C. Board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
ABS125K, ABS250K
Characteristics
Kennwerte
ESD rating according to JESD22-A114 / contact discharge C = 100pF R = 1.5kΩ
ESD-Festigkeit gemäß JESD22-A114 / Kontaktentladung
3B
ERSM
IFPM
8 kV
20 mJ
75 A
Non-repetitive peak reverse avalanche energy
Einmalige Impulsenergie in Sperr-Richtung
IRSM = 1 mA
TA = 25°C
Max. forward peak pulse current
10/1000µs pulse 1)
TA = 25°C
Max. Impuls-Strom in Fluss-Richtung
102
120
[%]
[A]
10
100
Tj = 125°C
80
Tj = 25°C
1
60
40
10-1
IF
20
IFAV
0
55a-(1.5a-0.9v)
10-2
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
0
TA
100
150
50
[°C]
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
tr = 10 µs
100
[%]
80
60
IPPM/2
PPPM/2
40
IPP
20
PPP
tP
t
0
0
1
2
3
[ms] 4
10/1000µs - pulse waveform
10/1000µs - Impulsform
2
http://www.diotec.com/
© Diotec Semiconductor AG
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