AG12K [DIOTEC]
Silicon Rectifier Cells with polysiloxan passivation; 硅整流细胞与聚硅氧烷钝化
| 型号： | AG12K |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Silicon Rectifier Cells with polysiloxan passivation |
| 文件： | 总1页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AG 12A … AG 12M
Silicon Rectifier Cells
with polysiloxan passivation
Silizium-Gleichrichterzellen
mit Polysiloxan-Passivierung
Nominal current – Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Weight approx. – Gewicht ca.
0.3 g
Standard packaging bulk
Standard Lieferform lose
Dimensions / Maße in mm
Maximum ratings and Characteristics
Kenn- und Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
VRRM [V]
AG 12A
AG 12B
AG 12D
AG 12G
AG 12J
AG 12K
AG 12M
50
80
130
100
200
250
400
450
600
700
800
1000
1300
1000
Max. forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100ꢀC
f > 15 Hz
TA = 25ꢀC
TA = 25ꢀC
IFAV
IFRM
IFSM
i2t
12 A 1)
60 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
500 A
Rating for fusing – Grenzlastintegral, t < 10 ms
1250 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
– 50...+150ꢀC
– 50...+150ꢀC
Forward voltage
Durchlaßspannung
Tj = 25ꢀC
Tj = 25ꢀC
IF = 12 A
VF
IR
< 0.95 V
Leakage current – Sperrstrom
VR = VRRM
< 10 ꢀA
1
)
Max. temperature of the terminals TT = 100ꢀC – Max. Temperatur der Kontaktflächen TT = 100ꢀC
400
28.02.2002
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