BAS19 [DIOTEC]

Surface Mount Silicon Planar Small-Signal Diode; 表面贴装硅平面小信号二极管
BAS19
型号: BAS19
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Surface Mount Silicon Planar Small-Signal Diode
表面贴装硅平面小信号二极管

整流二极管 信号二极管 光电二极管
文件: 总2页 (文件大小:135K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS 19 ... 21  
Surface Mount Silicon Planar  
Small-Signal Diode  
Silizium-Planar-Diode  
für die Oberflächenmontage  
Nominal current – Nennstrom  
200 mA  
85 V  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Plastic case  
SOT-23  
Kunststoffgehäuse  
(TO-236)  
Weight approx. – Gewicht ca.  
0.01 g  
Dimensions / Maße in mm  
Standard packaging taped and reeled  
see page 18  
1 = anode  
2 = n. c.  
Standard Lieferform gegurtet auf Rolle siehe Seite 18  
3 = cathode  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Working peak reverse voltage  
Repetitive peak reverse voltage  
Arbeits-Spitzensperrspannung  
Periodische Spitzensperrspannung  
VRWM [V]  
VRRM [V]  
BAS 19  
BAS 20  
BAS 21  
100  
150  
200  
120  
200  
250  
Max. average forward current  
Dauergrenzstrom  
tp < 0.3 ms  
f > 15 Hz  
IFAV  
200 mA 1)  
625 mA 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
Peak forward surge current  
Stoßstrom-Grenzwert  
Tj = 25C  
tp = 1 s  
IFSM  
IFSM  
2.5 A  
0.5 A  
tp = 1 s  
Max. power dissipation  
Verlustleistung  
TA = 25C  
Ptot  
500 mW 1)  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
– 50...+ 150C  
TS – 50...+ 150C  
1
)
Mounted on P.C. board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
04.02.2003  
1
BAS 19 ... 21  
Characteristics  
Kennwerte  
Forward voltage  
Tj = 25C  
Tj = 25C  
IF = 100 mA  
IF = 200 mA  
VF  
VF  
< 1.0 mV  
Durchlaßspannung  
< 1.25 mV  
Leakage current  
Sperrstrom  
VR = VRRM  
IR  
IR  
< 100 nA  
Tj = 150C VR = VRRM  
< 100 A  
Junction capacitance  
Sperrschichtkapazität  
VF = VR = 0 V Ctot  
f = 1 MHz  
< 5 pF  
Reverse recovery time  
Sperrverzug  
IF = 10 mA über / through  
trr  
< 50 ns  
IR = 10 mA bis / to IR = 1 mA,  
UR = 6 V, RL = 100 ꢁ  
Thermal resistance junction to ambient air  
RthA < 420 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
2
F:\Data\WP\DatBlatt\Einzelblätter\bas21.wpd  

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