BAW56 [DIOTEC]

Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode); 表面贴装硅平面双小信号二极管(共阳极)
BAW56
型号: BAW56
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Surface Mount Silicon Planar Dual Small-Signal Diodes (common anode)
表面贴装硅平面双小信号二极管(共阳极)

信号二极管
文件: 总2页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAW 56  
Surface Mount Silicon Planar  
Dual Small-Signal Diodes  
(common anode)  
Silizium-Planar-Doppel-Dioden  
für die Oberflächenmontage  
(gemeinsame Anode)  
Nominal current – Nennstrom  
250 mA  
70 V  
2.9±0.1  
1.1  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
0.4  
3
Plastic case  
SOT-23  
Kunststoffgehäuse  
(TO-236)  
2
1
Weight approx. – Gewicht ca.  
0.01 g  
Dimensions / Maße in mm  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
see page 18  
1 = cathode 1  
2 = cathode 2  
siehe Seite 18  
3 = common / gemeinsame anode  
Maximum ratings  
Grenzwerte  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM  
70 V  
Max. average forward current  
Dauergrenzstrom  
D1 + D2  
f > 15 Hz  
IFAV  
250 mA 1)  
450 mA 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
Peak forward surge current  
Stoßstrom-Grenzwert  
Tj = 25C  
tp = 1 s  
tp = 1 ms  
tp = 1 s  
IFSM  
IFSM  
IFSM  
2 A  
1 A  
0.5 A  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
– 50...+ 150C  
TS – 50...+ 150C  
Characteristics  
Kennwerte  
Forward voltage  
Tj = 25C  
Tj = 25C  
IF = 1 mA  
IF = 10 mA  
IF = 50 mA  
IF = 0.15 A  
VF  
VF  
VF  
VF  
< 715 mV  
< 855 mV  
< 1.0 V  
Durchlaßspannung  
< 1.25 V  
Leakage current  
Sperrstrom  
VR = VRRM  
IR  
IR  
IR  
< 2.5 A  
< 50 A  
< 30 A  
Tj = 150C VR = VRRM  
Tj = 150C VR = 25 V  
1
)
Mounted on P.C. board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
04.02.2003  
1
BAW 56  
Junction capacitance  
Sperrschichtkapazität  
VF = VR = 0 V  
f = 1 MHz  
Ctot  
trr  
< 1.5 pF  
< 6 ns  
Reverse recovery time  
Sperrverzug  
IF = 10 mA über / through  
IR = 10 mA bis / to IR = 1 mA,  
UR = 6 V, RL = 100 ꢁ  
Thermal resistance junction to ambient air  
RthA < 320 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
2
F:\Data\WP\DatBlatt\Einzelblätter\baw56.wpd  

相关型号:

BAW56,215

DIODE ARRAY GP 90V 215MA SOT23
ETC

BAW56,235

BAV756S; BAW56 series - High-speed switching diodes TO-236 3-Pin
NXP

BAW56-13-F

DUAL SURFACE MOUNT SWITCHING DIODE
DIODES

BAW56-13-F_12

DUAL SURFACE MOUNT SWITCHING DIODE
DIODES

BAW56-7

DUAL SURFACE MOUNT SWITCHING DIODE
DIODES

BAW56-7-F

DUAL SURFACE MOUNT SWITCHING DIODE
DIODES

BAW56-7-F_12

DUAL SURFACE MOUNT SWITCHING DIODE
DIODES

BAW56-A1

Fast Switching Speed
ETC

BAW56-AU

SURFACE MOUNT SWITCHING DIODES Fast switching speed
PANJIT

BAW56-AU_16

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAW56-AU_A0_00001

SURFACE MOUNT SWITCHING DIODES Fast switching speed
PANJIT

BAW56-AU_A0_10001

SURFACE MOUNT SWITCHING DIODES Fast switching speed
PANJIT