BC818W-16 [DIOTEC]
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | BC818W-16 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817W / BC818W
BC817W / BC818W
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
NPN
Version 2010-10-22
Power dissipation – Verlustleistung
200 mW
SOT-323
2±0.1
1±0.1
Plastic case
Kunststoffgehäuse
0.3
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC817W
BC818W
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
VCES
VCEO
VEBO
Ptot
IC
50 V
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
C open
5 V
200 mW 1)
500 mA
1 A
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
ICM
IEM
1 A
IBM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
–
–
–
250
400
600
VCE = 1 V, IC = 500 mA
all groups
hFE
40
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
–
–
0.7 V
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC817W / BC818W
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 1 V, IC = 500 mA
VBE
–
–
1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 20 V, (E open)
VCB = 20 V, Tj = 150°C, (E open)
ICB0
ICB0
–
–
–
–
100 nA
5 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 5 V, (C open)
IEB0
–
–
–
–
100 nA
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
80 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
RthA
–
10 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
< 625 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC807W / BC808W
BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR
Marking of available current gain groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS
Typ BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT
120
[%]
100
80
60
40
20
Ptot
0
0
TA
100
150
50
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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