BC858AR13 [DIOTEC]
Transistor;
| 型号： | BC858AR13 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856 ... BC860
BC856 ... BC860
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
PNP
Version 2011-11-07
Power dissipation – Verlustleistung
250 mW
2.9±0.1
1.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC857
BC860
BC858
BC859
BC856
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
65 V
80 V
45 V
50 V
30 V
30 V
5 V
250 mW 1)
100 mA
200 mA
Collector current – Kollektorstrom (dc)
- IC
Peak Collector current – Kollektor-Spitzenstrom
- ICM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
HFE
hFE
hFE
–
–
–
90
150
270
–
–
–
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
HFE
hFE
hFE
125
220
420
180
290
520
250
475
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VCEsat
- VCEsat
–
–
–
–
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VBEsat
- VBEsat
–
–
700 mV
900 mV
–
–
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC856 ... BC860
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, IC = - 2 mA
- VCE = 5 V, IC = - 10 mA
- VBE
- VBE
600 mV
–
–
–
750 mV
720 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
- ICBO
- ICBO
–
–
–
–
15 nA
4 µA
Emitter-Base cutoff current
- VEB = 5 V, (C open)
- IEBO
–
–
–
100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
fT
100 MHz
–
4.5 pF
–
CCBO
–
–
–
CEB0
9 pF
- VCE = 5 V, - IC = 200 µA
RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858
BC859 ... BC860
F
F
–
–
2 dB
1.2 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC846 ... BC850
Marking of available current gain groups
Stempelung der lieferbaren
Stromverstärkungsgruppen
BC856A = 3A
BC856B = 3B
BC856C = 3C
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC858A = 3E
BC858B = 3F
BC858C = 3G
BC860B = 3F
BC860C
BC859B = 3F
BC859C
= 3G or 4G
= 3G or 4C
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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