BCP48 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BCP48 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP 28, BCP 48
PNP
Darlington Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
6.5±0.2
3±0.1
Power dissipation – Verlustleistung
1.5 W
1.65
Plastic case
SOT-223
4
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
3
1
2
Plastic material has UL classification 94V-0
0.7
Gehäusematerial UL94V-0 klassifiziert
2.3
3.25
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B1 2, 4 = C 3 = E2
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BCP 28
30 V
40 V
BCP 48
60 V
80 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
10 V
Power dissipation – Verlustleistung
1.5 W 1)
500 mA
800 mA
100 mA
200 mA
150ꢀC
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom - ICM
Base current – Basisstrom (DC)
Peak Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- IC
- IB
- IBM
Tj
TS
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
IE = 0, - VCB = 60 V
IE = 0, - VCB = 30 V, TA = 150ꢀC BCP 28
IE = 0, - VCB = 60 V, TA = 150ꢀC BCP 48
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
BCP 28
BCP 48
- ICB0
–
–
–
–
–
–
–
–
100 nA
100 nA
10 ꢀA
10 ꢀA
- ICB0
- ICB0
- ICB0
- IEB0
–
–
100 nA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
Darlington Transistors
BCP 28, BCP 48
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 100 mA, - IB = 0.1 mA
- VCEsat
–
–
–
–
1 V
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 0.1 mA
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VBEsat
1.5 V
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
4000
2000
10000
4000
20000
10000
4000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
- VCE = 1 V, - IC = 0.1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
2000
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
fT
–
–
200 MHz
8 pF
–
–
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
RthA
RthS
93 K/W 2)
17 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCP 29, BCP 49
Pinning – Anschlußbelegung
4=2
3
1
2
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
3
01.11.2003
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