BCW65C [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BCW65C |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW 65, BCW 66
NPN
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
250 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BCW 65
BCW 66
45 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
B open
E open
C open
VCE0
VCB0
VEB0
Ptot
32 V
60 V
75 V
5 V
250 mW 1)
800 mA
1000 mA
100 mA
200 mA
150ꢀC
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Base current – Basis-Spitzenstrom
IB
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IBM
Tj
TS
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V
IE = 0, VCB = 32 V, Tj = 150ꢀC
IE = 0, VCB = 45 V
IE = 0, VCB = 45 V, Tj = 150ꢀC
ICB0
–
–
–
–
–
–
–
–
20 nA
20 ꢀA
20 nA
20 ꢀA
BCW 65
ICB0
ICB0
ICB0
BCW 66
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V
IEB0
–
–
20 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
42
01.11.2003
General Purpose Transistors
BCW 65, BCW 66
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
–
–
–
–
300 mV
700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
VBEsat
–
–
–
–
1.25 V
2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCW 65A / 66F hFE
35
50
80
–
–
–
–
–
–
VCE = 10 V, IC = 100 ꢀA BCW 65B / 66G hFE
BCW 65C / 66H hFE
BCW 65A / 66F hFE
75
–
–
VCE = 1 V, IC = 10 mA
VCE = 1 V, IC = 100 mA
VCE = 2 V, IC = 500 mA
BCW 65B / 66G hFE
BCW 65C / 66H hFE
BCW 65A / 66F hFE
BCW 65B / 66G hFE
BCW 65C / 66H hFE
BCW 65A / 66F hFE
BCW 65B / 66G hFE
BCW 65C / 66H hFE
110
180
100
160
250
–
–
–
–
–
250
400
630
–
160
250
350
35
60
100
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
fT
–
–
170 MHz
6 pF
–
–
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
–
60 pF
–
Thermal resistance junction to ambient air
RthA
420 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
BCW 67, BCW 68
Empfohlene komplementäre PNP-Transistoren
BCW 65A = EA
Marking – Stempelung
BCW 65B = EB
BCW 66G = EG
BCW 65C = EC
BCW 66H = EH
BCW 66F = EF
1) Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
43
相关型号：
BCW65CD87Z
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
BCW65CE6327
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,
INFINEON
BCW65CE6433
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
BCW65CL99Z
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明