BCW68H [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors![BCW68H](http://pdffile.icpdf.com/pdf1/p00073/img/icpdf/BCW68_382435_icpdf.jpg)
型号: | BCW68H |
厂家: | ![]() |
描述: | Surface mount Si-Epitaxial PlanarTransistors |
文件: | 总2页 (文件大小:124K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BCW 67, BCW 68
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
250 mW
±0.1
Plastic case
SOT-23
1.1
2.9
0.4
Kunststoffgehäuse
(TO-236)
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BCW 67
BCW 68
45 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
32 V
45 V
60 V
5 V
250 mW 1)
800 mA
1000 mA
100 mA
200 mA
150ꢀC
- IC
Peak Collector current – Kollektor-Spitzenstrom - ICM
Base current – Basis-Spitzenstrom
- IB
- IBM
Tj
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V
IE = 0, - VCB = 32 V, Tj = 150ꢀC
IE = 0, - VCB = 45 V
IE = 0, - VCB = 45 V, Tj = 150ꢀC
- ICB0
–
–
–
–
–
–
–
–
20 nA
20 ꢀA
20 nA
20 ꢀA
BCW 67
- ICB0
- ICB0
- ICB0
BCW 68
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
- IEB0
–
–
20 nA
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
44
01.11.2003
General Purpose Transistors
BCW 67, BCW 68
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 100 mA, - IB = 10 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
- VCEsat
–
–
–
–
300 mV
700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 10 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
- VBEsat
–
–
–
–
1.25 V
2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCW 67A / 68F hFE
35
50
80
–
–
–
–
–
–
–
–
–
–
- VCE = 10 V
BCW 67B / 68G hFE
BCW 67C / 68H hFE
BCW 67A / 68F hFE
BCW 67B / 68G hFE
BCW 67C / 68H hFE
BCW 67A / 68F hFE
BCW 67B / 68G hFE
BCW 67C / 68H hFE
BCW 67A / 68F hFE
BCW 67B / 68G hFE
BCW 67C / 68H hFE
- IC = 100 ꢀ mA
75
- VCE = 1 V
120
180
100
160
250
35
- IC = 10 mA
–
–
160
250
350
–
–
–
250
400
630
–
–
–
- VCE = 1 V
- IC = 100 mA
- VCE = 2 V
60
100
- IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
fT
–
–
200 MHz
6 pF
–
–
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
–
60 pF
–
Thermal resistance junction to ambient air
RthA
420 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN-transistors
BCW 65, BCW 66
Empfohlene komplementäre NPN-Transistoren
BCW 67A = DA
Marking – Stempelung
BCW 67B = DB
BCW 68G = DG
BCW 67C = DC
BCW 68H = DH
BCW 68F = DF
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
45
01.11.2003
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