BF822 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BF822 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF 720, BF 722
NPN
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
Power dissipation – Verlustleistung
1.5 W
1.65
Plastic case
SOT-223
4
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
3
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.7
2.3
3.25
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BF 720
BF 722
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
B open
E open
C open
VCE0
VCB0
VEB0
Ptot
300 V
300 V
250 V
250 V
5 V
1.5 W 1)
100 mA
200 mA
100 mA
150ꢀC
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IBM
Tj
TS
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
ICB0
ICB0
–
–
–
–
10 nA
10 ꢀA
IE = 0, VCB = 200 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
IEB0
–
–
–
–
50 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 30 mA, IB = 5 mA
VCEsat
600 mV
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
10
01.11.2003
High Voltage Transistors
BF 820, BF 822
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
50
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 20 V, IC = 25 mA
hFE
–
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 25 mA, f = 100 MHz
fT
50 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 30 V, IE = ie = 0, f = 1 MHz
CCB0
1.6 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
RthA
RthS
87 K/W 2)
27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BF 721, BF 723
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
11
01.11.2003
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