BSP42 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BSP42 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP 40 ... BSP 43
NPN
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
6.5±0.2
3±0.1
Power dissipation – Verlustleistung
1.3 W
1.65
Plastic case
SOT-223
4
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
3
1
2
Plastic material has UL classification 94V-0
0.7
Gehäusematerial UL94V-0 klassifiziert
2.3
3.25
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BSP 40
BSP 42
BSP 41
60 V
BSP 43
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
B open
E open
C open
VCE0
VCB0
VEB0
Ptot
80 V
90 V
70 V
5 V
1.3 W 1)
1 A
IC
Peak Collector current – Kollektor-Spitzenstrom ICM
2 A
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IBM
Tj
TS
200 mA
150ꢀC
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 60 V
ICB0
ICB0
–
–
–
–
100 nA
50 ꢀA
IE = 0, VCB = 60 V, Tj = 150ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
IEB0
–
–
100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
–
–
–
–
250 mV
500 mV
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
4
01.11.2003
Switching Transistors
BSP 40 ... BSP 43
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
VBEsat
–
–
–
–
1 V
1.2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V, - IC = 100 ꢀA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
- VCE = 5 V, - IC = 100 ꢀA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
hFE
hFE
hFE
hFE
hFE
hFE
10
40
30
30
100
50
–
–
–
–
–
–
–
120
–
–
300
–
BSP 40
BSP 42
BSP 41
BSP 43
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Thermal resistance – Wärmewiderstand
fT
100 MHz
–
–
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
RthA
RthS
93 K/W 2)
12 K/W
Recommended complementary PNP transistors
BSP 30, BSP 31, BSP 32, BSP 33
Empfohlene komplementäre PNP-Transistoren
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
5
01.11.2003
相关型号：
BSP42TRL
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
YAGEO
BSP42TRL13
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
YAGEO
©2020 ICPDF网 联系我们和版权申明