BYZ50K33 [DIOTEC]
Silicon Protectifiers with TVS characteristics High-temperature diodes; 硅Protectifiers与TVS的特性高温二极管
| 型号： | BYZ50K33 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Silicon Protectifiers with TVS characteristics High-temperature diodes |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYZ 50A22 ... BYZ 50A47
BYZ 50K22 ... BYZ 50K47
Silicon Protectifiers
Silizium Schutzgleichrichter
mit Begrenzereigenschaften
Hochtemperaturdioden
with TVS characteristics
High-temperature diodes
Ø 12.75
Ø 11 ±0.1
Nominal current – Nennstrom
50 A
Nominal breakdown voltage
Nominale Abbruch-Spannung
19.8 ... 51.7 V
Metal press-fit case with plastic cover
1.3
Metall-Einpreßgehäuse mit Plastik-Abdeckung
Weight approx. – Gewicht ca.
10 g
Casting compound has UL classification 94V-0
Vergußmasse UL94V-0 klassifiziert
Ø 13±01
Standard packaging: bulk
Standard Lieferform: lose im Karton
Dimensions / Maße in mm
Maximum ratings
Grenzwerte
Type / Typ
Breakdown voltage
Abbruch-Spannung
IT = 100 mA
Reverse voltage
Sperrspannung
IR = 5 ꢀA
Max. clamping voltage
Max. Begrenzerspanng.
at / bei IPP, tp = 1m s
Wire to / Draht an
Anode
Cathode
VBRmin [V] VBRmax
VR [V]
VC [V]
31,9
39,1
47,7
56,4
67,8
IPP [A]
242
BYZ 50A22
BYZ 50A27
BYZ 50A33
BYZ 50A39
BYZ 50A47
BYZ 50K22
BYZ 50K27
BYZ 50K33
BYZ 50K39
BYZ 50K47
19.8
24.3
29.7
35.1
42.3
24.2
29.7
36.3
42.9
51.7
> 17.8
> 21.8
> 26.8
> 31.6
> 38.1
192
160
134
112
Max. average forward rectified current, R-load
TC = 150ꢀC
TA = 25ꢀC
IFAV
50 A
Dauergrenzstrom in Einwegschaltung mit R-Last
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
IFSM
400 / 450 A
Rating for fusing – Grenzlastintegral, t <10 ms
TA = 25ꢀC
i2t
VF
Tj
800 A2s
< 1.1 V
Forward voltage – Durchlaßspannung
Tj = 25ꢀC
IF = 50 A
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
– 50…+215ꢀC
TS – 50…+215ꢀC
1
04.09.2002
BYZ 50A22 ... BYZ 50A47
BYZ 50K22 ... BYZ 50K47
Max. junction temperature in case of “Load Dump”
Tjmax
RthC
+280ꢀC
< 0.6 K/W
7 kN
Max. Sperrschichttemperatur bei “Load Dump”
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Maximum pressure – Maximaler Einpreßdruck
2
F:\Data\WP\DatBlatt\Einzelblätter\byz50a22-k47.wpd
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