MPSA42BK [DIOTEC]
Small Signal Bipolar Transistor, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | MPSA42BK |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 晶体 小信号双极晶体管 高压 IOT |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA42 / MPSA43
MPSA42 / MPSA43
High voltage Si-epitaxial planar transistors
Hochspannungs-Si-Epitaxial Planar-Transistoren
NPN
NPN
Version 2005-06-17
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
E B C
Weight approx.
Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2 x 2.54
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions / Maße [mm]
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MPSA42
MPSA43
200 V
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Base-voltage - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
300 V
300 V
200 V
6 V
625 mW 1)
Collector current – Kollektorstrom (dc)
Base current – Basisstrom
500 mA
IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-65...+150°C
-65…+150°C
Tj
TS
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 160 V
MPSA42
MPSA43
ICB0
ICB0
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
IB = 0, VEB = 6 V
IB = 0, VEB = 4 V
MPSA42
MPSA43
IEB0
IEB0
–
–
–
–
100 nA
100 nA
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
MPSA42
VCEsat
VCEsat
–
–
–
–
500 mV
400 mV
IC = 20 mA, IB = 2 mA
MPSA43
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case
Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MPSA42 / MPSA43
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 20 mA, IB = 2 mA
VBEsat
–
–
0.9 V
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 1 mA
hFE
hFE
hFE
25
40
40
–
–
–
–
–
–
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 10 mA, f = 100 MHz
fT
50 MHz
–
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
MPSA42
MPSA43
CCB0
CCB0
–
–
–
–
3 pF
4 pF
VCB = 20 V, IE = ie = 0, f = 1 MHz
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MPSA92, MPSA93
120
[%]
100
80
60
40
20
Ptot
0
0
TA
100
150
50
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case
Gültig, wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
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