P4SMA220A [DIOTEC]
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes; 表面贴装单向和双向瞬态电压抑制二极管
| 型号： | P4SMA220A |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes |
| 文件： | 总3页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P4SMA220 ... P4SMA550CA
P4SMA220 ... P4SMA550CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2006-04-19
Peak pulse power dissipation
Impuls-Verlustleistung
400 W
5± 0.2
Nominal breakdown voltage
Nominale Abbruch-Spannung
220...550 V
Plastic case
Kunststoffgehäuse
~ SMA
~ DO-214AC
1
0.15
Type
Typ
Weight approx. – Gewicht ca.
0.07 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
4.6± 0.2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
Dimensions - Maße [mm]
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
TT = 75°C
TA = 25°C
IF = 25 A
PPPM
400 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
PM(AV)
IFSM
VF
1 W
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
40 A 2)
Max. instantaneous forward voltage
< 3.5 V 2)
Augenblickswert der Durchlass-Spannung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
RthA
< 70 K/W 3)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthT
< 30 K/W
Wärmewiderstand Sperrschicht – Anschluss
1
Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
2
3
Unidirectional diodes only – Nur für unidirektionale Dioden
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
P4SMA220 ... P4SMA550CA
Maximum ratings
Grenzwerte
Type
Typ
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
Stand-off voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
VBR [V]
VWM [V]
175
185
202
214
243
256
284
300
324
342
356
376
388
408
429
477
445
495
ID [µA]
VC [V]
344
328
360
344
430
414
504
482
574
548
631
602
686
658
764
729
793
760
IPPM [A]
1.2
P4SMA220
P4SMA220A
P4SMA250
P4SMA250A
P4SMA300
P4SMA300A
P4SMA350
P4SMA350A
P4SMA400
P4SMA400A
P4SMA440
P4SMA440A
P4SMA480
P4SMA480A
P4SMA530
P4SMA530A
P4SMA550
P4SMA550A
220 ± 10%
220 ± 5%
250 ± 10%
250 ± 5%
300 ± 10%
300 ± 5%
350 ± 10%
350 ± 5%
400 ± 10%
400 ± 5%
440 ± 10%
440 ± 5%
480 ± 10%
480 ± 5%
530 ± 10%
530 ± 5%
550 ± 10%
550 ± 5%
198...242
209...231
225...275
237...263
270...330
285...315
315...385
332...368
360...440
380...420
396...484
418...462
432...528
456...504
477...583
503...556
495...605
522...577
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.2
1.1
1.2
0.93
0.97
0.79
0.83
0.70
0.73
0.63
0.66
0.58
0.61
0.52
0.55
0.50
0.53
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P4SMAJ65
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P4SMAJ65
2
http://www.diotec.com/
© Diotec Semiconductor AG
P4SMA220 ... P4SMA550CA
120
[%]
tr = 10 µs
100
100
[%]
80
80
60
60
IPPM/2
PPPM/2
40
IPP
20
PPP
0
40
IPP
20
PPP
tP
t
0
0
1
2
3
[ms] 4
0
TA
100
150
[°C]
50
Peak pulse power/current vs. ambient temperature1)
10/1000µs - pulse waveform
10/1000µs - Impulsform
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
1
102
[kW]
10
1
PPP
0.1
0.1µs
tP
1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P4SMAJ65
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P4SMAJ65
1
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
3
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