P6SMB250A [DIOTEC]
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes; 表面贴装单向和双向瞬态电压抑制二极管型号: | P6SMB250A |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes |
文件: | 总3页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
P6SMB220 ... P6SMB550CA
P6SMB220 ... P6SMB550CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2006-07-04
Peak pulse power dissipation
Impuls-Verlustleistung
600 W
5.4± 0.5
Nominal breakdown voltage
Nominale Abbruch-Spannung
220...550 V
1.1
Plastic case
~ SMB
Kunststoffgehäuse
~ DO-214AA
Type
Typ
Weight approx. – Gewicht ca.
0.1 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5± 0.5
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
Dimensions - Maße [mm]
For bidirectional types, suppressor characteristics apply in both directions; add suffix “C” or “CA”.
Für bidirektionale Dioden gelten die Begrenzer-Eigenschaften in beiden Richtungen;
es ist das Suffix “C” oder “CA” zu ergänzen.
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
TT = 75°C
TA = 25°C
IF = 25 A
PPPM
PM(AV)
IFSM
VF
600 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
5 W
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
100 A 2)
< 3.0 V 2)
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
RthA
< 45 K/W 3)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthT
< 15 K/W
Wärmewiderstand Sperrschicht – Anschluss
1
Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
2
3
Unidirectional diodes only – Nur für unidirektionale Dioden
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
P6SMB220 ... P6SMB550CA
Maximum ratings
Grenzwerte
Type
Typ
Breakdown voltage at IT = 1 mA
Abbruch-Spannung bei IT = 1 mA
Stand-off voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at / bei VWM
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
VBR [V]
VWM [V]
175
185
202
214
243
256
284
300
324
342
356
376
388
408
429
477
445
495
ID [µA]
VC [V]
344
328
360
344
430
414
504
482
574
548
631
602
686
658
764
729
793
760
IPPM [A]
1.7
P6SMB220
P6SMB220A
P6SMB250
P6SMB250A
P6SMB300
P6SMB300A
P6SMB350
P6SMB350A
P6SMB400
P6SMB400A
P6SMB440
P6SMB440A
P6SMB480
P6SMB480A
P6SMB530
P6SMB530A
P6SMB550
P6SMB550A
220 ± 10%
220 ± 5%
250 ± 10%
250 ± 5%
300 ± 10%
300 ± 5%
350 ± 10%
350 ± 5%
400 ± 10%
400 ± 5%
440 ± 10%
440 ± 5%
480 ± 10%
480 ± 5%
530 ± 10%
530 ± 5%
550 ± 10%
550 ± 5%
198...242
209...231
225...275
237...263
270...330
285...315
315...385
332...368
360...440
380...420
396...484
418...462
432...528
456...504
477...583
503...556
495...605
522...577
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.8
1.7
1.7
1.4
1.4
1.2
1.2
1.0
1.1
1.0
1.0
0.87
0.91
0.79
0.82
0.76
0.79
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA
2
http://www.diotec.com/
© Diotec Semiconductor AG
P6SMB220 ... P6SMB550CA
120
[%]
tr = 10 µs
100
100
[%]
80
80
60
60
IPPM/2
PPPM/2
40
IPP
20
PPP
0
40
IPP
20
PPP
tP
0
0
1
2
3
[ms] 4
0
TA
100
150
[°C]
50
1
Peak pulse power/current vs. ambient temperature1)
10/1000µs - pulse waveform
10/1000µs - Impulsform
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
102
[kW]
10
1
PPP
0.1
0.1µs
tP
1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
3
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