P6SMB250A [DIOTEC]

Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes; 表面贴装单向和双向瞬态电压抑制二极管
P6SMB250A
型号: P6SMB250A
厂家: DIOTEC SEMICONDUCTOR    DIOTEC SEMICONDUCTOR
描述:

Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
表面贴装单向和双向瞬态电压抑制二极管

瞬态抑制器 二极管 光电二极管 局域网
文件: 总3页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
P6SMB220 ... P6SMB550CA  
P6SMB220 ... P6SMB550CA  
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes  
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage  
Version 2006-07-04  
Peak pulse power dissipation  
Impuls-Verlustleistung  
600 W  
5.4± 0.5  
Nominal breakdown voltage  
Nominale Abbruch-Spannung  
220...550 V  
1.1  
Plastic case  
~ SMB  
Kunststoffgehäuse  
~ DO-214AA  
Type  
Typ  
Weight approx. – Gewicht ca.  
0.1 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
5± 0.5  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rollen  
Dimensions - Maße [mm]  
For bidirectional types, suppressor characteristics apply in both directions; add suffix “C” or “CA”.  
Für bidirektionale Dioden gelten die Begrenzer-Eigenschaften in beiden Richtungen;  
es ist das Suffix “C” oder “CA” zu ergänzen.  
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA  
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Peak pulse power dissipation (10/1000 µs waveform)  
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)  
TA = 25°C  
TT = 75°C  
TA = 25°C  
IF = 25 A  
PPPM  
PM(AV)  
IFSM  
VF  
600 W 1)  
Steady state power dissipation  
Verlustleistung im Dauerbetrieb  
5 W  
Peak forward surge current, 60 Hz half sine-wave  
Stoßstrom für eine 60 Hz Sinus-Halbwelle  
100 A 2)  
< 3.0 V 2)  
Max. instantaneous forward voltage  
Augenblickswert der Durchlass-Spannung  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
Thermal resistance junction to ambient air  
RthA  
< 45 K/W 3)  
Wärmewiderstand Sperrschicht – umgebende Luft  
Thermal resistance junction to terminal  
RthT  
< 15 K/W  
Wärmewiderstand Sperrschicht – Anschluss  
1
Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)  
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)  
2
3
Unidirectional diodes only – Nur für unidirektionale Dioden  
Mounted on P.C. board with 50 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
P6SMB220 ... P6SMB550CA  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Breakdown voltage at IT = 1 mA  
Abbruch-Spannung bei IT = 1 mA  
Stand-off voltage  
Sperrspannung  
Max. rev. current  
Max. Sperrstrom  
at / bei VWM  
Max. clamping voltage  
Max. Begrenzer-Spannung  
at / bei IPPM (10/1000 µs)  
VBR [V]  
VWM [V]  
175  
185  
202  
214  
243  
256  
284  
300  
324  
342  
356  
376  
388  
408  
429  
477  
445  
495  
ID [µA]  
VC [V]  
344  
328  
360  
344  
430  
414  
504  
482  
574  
548  
631  
602  
686  
658  
764  
729  
793  
760  
IPPM [A]  
1.7  
P6SMB220  
P6SMB220A  
P6SMB250  
P6SMB250A  
P6SMB300  
P6SMB300A  
P6SMB350  
P6SMB350A  
P6SMB400  
P6SMB400A  
P6SMB440  
P6SMB440A  
P6SMB480  
P6SMB480A  
P6SMB530  
P6SMB530A  
P6SMB550  
P6SMB550A  
220 ± 10%  
220 ± 5%  
250 ± 10%  
250 ± 5%  
300 ± 10%  
300 ± 5%  
350 ± 10%  
350 ± 5%  
400 ± 10%  
400 ± 5%  
440 ± 10%  
440 ± 5%  
480 ± 10%  
480 ± 5%  
530 ± 10%  
530 ± 5%  
550 ± 10%  
550 ± 5%  
198...242  
209...231  
225...275  
237...263  
270...330  
285...315  
315...385  
332...368  
360...440  
380...420  
396...484  
418...462  
432...528  
456...504  
477...583  
503...556  
495...605  
522...577  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.8  
1.7  
1.7  
1.4  
1.4  
1.2  
1.2  
1.0  
1.1  
1.0  
1.0  
0.87  
0.91  
0.79  
0.82  
0.76  
0.79  
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA  
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  
P6SMB220 ... P6SMB550CA  
120  
[%]  
tr = 10 µs  
100  
100  
[%]  
80  
80  
60  
60  
IPPM/2  
PPPM/2  
40  
IPP  
20  
PPP  
0
40  
IPP  
20  
PPP  
tP  
0
0
1
2
3
[ms] 4  
0
TA  
100  
150  
[°C]  
50  
1
Peak pulse power/current vs. ambient temperature1)  
10/1000µs - pulse waveform  
10/1000µs - Impulsform  
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)  
102  
[kW]  
10  
1
PPP  
0.1  
0.1µs  
tP  
1µs  
10µs  
100µs  
1ms  
10ms  
Non repetitive peak pulse power versus pulse width (10/1000 wave form)  
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)  
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
3

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