S2B [DIOTEC]
Surface Mount Si-Rectifiers; 表面贴装硅整流器
| 型号： | S2B |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface Mount Si-Rectifiers |
| 文件： | 总2页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2A ... S2Y
S2A ... S2Y
Surface Mount Si-Rectifiers
Si-Gleichrichter für die Oberflächenmontage
Version 2005-06-21
Nominal Current – Nennstrom
2 A
5.4± 0.5
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...2000 V
Plastic case
Kunststoffgehäuse
~ SMB
~ DO-214AA
1.1
Weight approx. – Gewicht ca.
0.1 g
Type
Typ
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5± 0.5
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RRM [V]
VRSM [V]
S2A
S2B
S2D
S2G
S2J
50
50
100
100
200
200
400
400
600
600
S2K
S2M
S2T
S2W
S2X
S2Y
800
800
1000
1300
1600
1800
2000
1000
1300
1600
1800
2000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
2 A
10 A 1)
50/55 A
12 A2s
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+150°C
-50...+150°C
Tj
TS
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
S2A ... S2Y
Characteristics
Kennwerte
Forward voltage – Durchlass-Spannung
Tj = 25°C
Tj = 25°C
Tj = 100°C VR = VRRM
IF = 2 A
VF
< 1.15 V
Leakage current
Sperrstrom
VR = VRRM
IR
IR
< 5 µA
< 100 µA
Thermal resistance junction to ambient air
RthA
< 50 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
RthT
< 15 K/W
Wärmewiderstand Sperrschicht − Anschluss
102
120
[%]
[A]
10
100
Tj = 125°C
80
Tj = 25°C
1
60
40
10-1
IF
20
IFAV
0
50a-(1a-1.1v)
10-2
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
0
TT
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
102
[A]
10
îF
1
1
10
102
[n]
103
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
1
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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