TIP31B [DIOTEC]
General Purpose Silicon Power Transistors; 通用硅功率晶体管
| 型号： | TIP31B |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | General Purpose Silicon Power Transistors |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP31 ... TIP31C
TIP31 ... TIP31C
General Purpose Silicon Power Transistors
Silizium Leistungs-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-07-12
10±0.2
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
40 W
3.8
4
Collector current
Kollektorstrom
3 A
TO-220AB
2.2 g
Type
Typ
Plastic case
Kunststoffgehäuse
1 2 3
Weight approx.
Gewicht ca.
1.5
0.9
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2.54
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP31
40 V
TIP31A
TIP31B
80 V
TIP31C
100 V
Collector-Emitter-voltage
Collector-Emitter-voltage
Emitter-Base-voltage
B open
E open
C open
VCEO
VCES
VEBO
60 V
60 V
40 V
80 V
100 V
5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
40 W
Collector current – Kollektorstrom (dc)
IC
ICM
IB
3 A
5 A
1 A
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
hFE
hFE
25
10
–
–
–
50
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
IC = 3 A, IB = 375 mA
Base-Emitter voltage – Basis-Emitter-Spannung 2)
VCEsat
–
–
–
–
1.2 V
1.8 V
VCE = 4 V, IC = 3 A
VBE
1
2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
TIP31 ... TIP31C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 30 V (B open)
TIP31
TIP31A
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 60 V (B open)
TIP31B
TIP31C
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 40 V (B-E short)
VCE = 60 V (B-E short)
TIP31
TIP31A
ICES
ICES
–
–
–
–
200 nA
200 nA
VCE = 80 V (B-E short)
VCE = 100 V (B-E short)
TIP31B
TIP31C
ICES
ICES
–
–
–
–
200 nA
200 nA
Emitter-Base cutoff current
VEB = 5 V, (C open)
IEB0
–
–
–
1 mA
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
fT
3 MHz
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 0.5 A, f = 1 kHz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
hfe
hfe
20
3
–
–
–
–
Switching times – Schaltzeiten (between 10% and 90% levels)
turn-on time
turn-off time
ton
toff
–
–
300 ns
1 µs
–
–
I
Con = 1 A
IBon = - IBoff = 100 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
RthC
M4
< 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
< 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
TIP32 ... TIP32C
1
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
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