TIP32B [DIOTEC]
Si-Epitaxial PlanarTransistors; 硅外延PlanarTransistors型号: | TIP32B |
厂家: | DIOTEC SEMICONDUCTOR |
描述: | Si-Epitaxial PlanarTransistors |
文件: | 总2页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TIP32, TIP32A ... C
General Purpose Transistors
Si-Epitaxial PlanarTransistors PNP
PNP
Version 2004-06-29
Collector current – Kollektorstrom
3 A
Plastic case
TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
1 = B 2 = C 3 = E
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP32 TIP32A TIP32B TIP32C
Collector-Emitter-voltage
Collector-Emitter-voltage
Emitter-Base-voltage
B open
- VCE0
40 V
40 V
60 V
60 V
80 V
80 V
100 V
100 V
B shorted - VCES
C open
- VEB0
5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
Ptot
TC =25°C Ptot
2 W 1)
40 W
with cooling – mit Kühlung
Collector current – Kollektorstrom
- IC
3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom
- ICM
5 A
Base current – Basisstrom
- IB
Tj
1 A
150°C
Junction temp. – Sperrschichttemp.
Storage temp. – Lagerungstemperatur
TS
- 65…+ 150°C
Characteristics, Tj = 25°C
Kennwerte, Tj = 25°C
Min.
Typ.
Max.
1.2 V
1.8
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 3 A, - IB = 375 mA
- VCEsat
–
–
–
–
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 4 V, - IC = 3 A
- VBEon
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 4 V, - IC = 1 A
- VCE = 4 V, - IC = 3 A
hFE
hFE
25
10
–
–
–
50
1
)
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
28
General Purpose Transistors
TIP32, TIP32A ... C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
TIP32
TIP32A
- ICE0
- ICE0
–
–
–
–
300 nA
300 nA
- VCE = 30 V
TIP32B
TIP32C
- ICE0
- ICE0
–
–
–
–
300 nA
300 nA
- VCE = 60 V
- VCE = rated VCE0
- ICES
–
–
–
–
200 nA
h-Parameters at - VCE = 10 V, - IC = 0.5 A, f = 1 kHz
Small signal current gain
hfe
20
–
–
Kleinsignal-Stromverstärkung
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 0.5 A, f = 1 MHz
Switching times – Schaltzeiten
fT
3 MHz
turn-on time
turn-off time
ton
toff
–
–
300 ns
1 µs
–
–
- ICon = 1 A,
- IBon = IBoff = 100 mA
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
RthA
RthC
62 K/W 1)
3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M 4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
TIP31, TIP31A
TIP31B, TIP31C
1
)
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
29
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