HER1640C [DSK]
HIGH EFFICIENCY RECTIFIER;型号: | HER1640C |
厂家: | Diode Semiconductor Korea |
描述: | HIGH EFFICIENCY RECTIFIER 功效 |
文件: | 总2页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Diode Semiconductor Korea
HER1610C---HER1660C
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 16 A
HIGH EFFICIENCY RECTIFIER
FEATURES
TO-220AB
Low cost
4.5± 0.2
1.4± 0.2
Low leakage
10.2± 0.2
Low forward voltage drop
High current capability
φ 3.8± 0.15
Easily cleaned with alcohol,Isopropanol
and similar solvents
PIN
3
1
2
2.6± 0.2
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
0.9± 0.1
Case:JEDEC TO-220AB,molded plastic
Terminals: Solderable per
MIL- STD-750,Method 2026
0.5± 0.1
2.5± 0.1
PIN 1
PIN 3
CASE
PIN 2
Polarity: As marked
Weight:0.071 ounce, 2.006 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
1610C 1620C 1630C 1640C 1650C 1660C
HER
HER
HER
HER
HER
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
V
V
VRRM
VRMS
VDC
100
70
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
Maximum DC blocking voltage
Maximum average forw ard rectified current
@TC=100
100
16
A
IF(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
IFSM
200
A
Maximum instantaneous forw ard voltage
V
1.3
1.7
1.0
VF
@ 8.0A
Maximum reverse current
@TA=25
10
IR
trr
A
at rated DC blocking voltage @TA=150
500
Maximum reverse recovery time
Operating junction temperature range
(Note1)
ns
50
100
- 55 ----- + 150
- 55 ----- + 150
T
J
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
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Diode Semiconductor Korea
HER1610C---HER1660C
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
rr
t
+0.5A
D.U.T.
PULSE
GENERATOR
(NOTE2)
(+)
0
25VDC
(approx)
(-)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR25/50 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISETIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- PEAK FORWARD SURGE CURRENT
100
200
10
℃
TJ=125
8.3ms Single Half
Sine-Wave
1
0.1
0
Tj=25oC
Pulse Width=300
1% Duty Cycle
1
2
4
8 10
20
40 60 80 100
s
0.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
z
FIG.4-FORWORD DERATING CURVE
24
20
16
12
8.0
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
4.0
0
0
25
50
75 100 125 150 175
CASE TEMPERATURE,
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