MBR16200PT [DSK]

SCHOTTKY BARRIER RECTIFIERS;
MBR16200PT
型号: MBR16200PT
厂家: Diode Semiconductor Korea    Diode Semiconductor Korea
描述:

SCHOTTKY BARRIER RECTIFIERS

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中文:  中文翻译
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Diode Semiconductor Korea  
MBR16150PT,MBR16200PT  
Reverse Voltage: 150,200V  
Forward Current: 16A  
SCHOTTKY BARRIER RECTIFIERS  
FEATURES  
TO-3P  
15.8± 0.2  
5.0± 0.15  
.
Metal-Semiconductor junction with guard ring  
Epitaxial construction  
8.0± 0.2  
2.0± 0.15  
.
.
Low forward voltage drop, low swithing losses  
High surge capacity  
.
φ3.6± 0.15  
.
For use in low voltage, high frequency inverters free  
PIN  
wheeling, and polarity protection applications  
1
3
2
.
2.4± 0.2  
The plastic material carries U/L recognition 94V-0  
2.2± 0.15  
1.2± 0.15  
3.0± 0.1  
MECHANICAL DATA  
.
.
Case: JEDEC TO-3P, molded plastic body  
Terminals: Solderable per MIL-STD-  
0.6± 0.1  
750, Method 2026  
Polarity: As marked  
Mounting Position: Any  
Weight: 0.223 ounce, 6.3 grams  
5.4± 0.15  
.
.
Dimensions in millimeters  
.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Parameter  
Symbol  
MBR16150PT  
MBR16200PT  
UNITS  
VRRM  
VRWS  
VDC  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
150  
135  
150  
200  
140  
200  
V
V
V
Maximum DC blocking voltage  
Maximum average forward tolal device  
rectified current @TC=130°C  
I(AV)  
A
A
16  
Peak forward surge current  
8.3ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
Maximum instantaneous  
forward voltage @ 8.0A  
V
VF  
IR  
0.95  
Maximum reverse current @TA=25°C  
at rated DC blocking voltage @TA=100°C  
0.2  
15  
mA  
RθJC  
TJ  
Maximum thermal resistance (Note1)  
Operating junction temperature range  
Storage temperature range  
°C/W  
°C  
1.5  
-55 --- +150  
TSTG  
°C  
-55 --- +150  
NOTES: 1. Thermal resistance from junction to case.  
www.diode.kr  
Diode Semiconductor Korea  
MBR16150PT,MBR16200PT  
FIG.1 TYPICAL FORWARD CHARACTERISTICS  
FIG.2 FORWARD DERATING CURVE  
100  
20  
16  
12  
10  
8.0  
4.0  
1.0  
0
0.7 0.8 0.9  
1.0 1.1 1.2 1.3 1.4 1.5  
0
25  
75  
125  
50  
100  
150  
Instantaneous Forward Voltage, ( V )  
Case Temperature, ( °C )  
FIG.3 TYPICAL REVERSE CHARACTERISTICS  
FIG.4 PEAK FORWARD SURGE CURRENT  
1000  
150  
120  
90  
100  
10  
T
A
=100°  
C
60  
1.0  
0.1  
T
A=25°C  
30  
0
0.01  
0
20  
40  
60  
80  
100 120 140  
1
10  
100  
Number Of Cycles At 60H  
Percent Of Rated Peak Reverse Voltage, %  
z
www.diode.kr  

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