MBR1680PT [DSK]
DUAL SCHOTTKY RECTIFIERS;型号: | MBR1680PT |
厂家: | Diode Semiconductor Korea |
描述: | DUAL SCHOTTKY RECTIFIERS |
文件: | 总2页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Diode Semiconductor Korea
MBR1680PT---MBR16100PT
VOLTAGE RANGE: 80 - 100 V
CURRENT: 16 A
DUAL SCHOTTKY RECTIFIERS
FEATURES
High surge capacity.
TO-3P
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
φ3.6± 0.15
PIN
1
2
3
MECHANICAL DATA
2.4± 0.2
2.2± 0.15
1.2± 0.15
Case:JEDEC TO-3P,molded plastic body
Terminals:Solderable per MIL-STD-750,
3.0± 0.1
1 1
Method 2026
Polarity: As marked
0.6± 0.1
5.4± 0.15
Weight: 0.223 ounce, 6.3 grams
Position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
MBR
1680PT
MBR
16100PT
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
80
100
56
70
Maximum DC blocking voltage
80
100
Maximum average forw ard total device11111111
16
IF(AV)
IFSM
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
150
b
sine-w ave superimposed on rated load
Maximum forw ard
)
=8.0A,T =25
(IF
V
voltage per leg
(NOTE 1)
VF
0.85
C
Maximum reverse current
at rated DC blocking voltage
@TC=25
1.0
100
1.5
m A
IR
@TC=125
/W
Maximum thermal resistance (NOTE 2)
RθJC
TJ
- 55 ---- + 150
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.
www.diode.kr
Diode Semiconductor Korea
MBR1680PT---MBR16100PT
FIG.2 -- MAXIMUMNON-REPETITIVEPEAK
FORWARD SURGE CURRENT PERLEG
FIG.1 -- FORWARD CURRENT DERATING CURVE
175
J
J
T =T max.
8.3ms Single Half Sine Wave
(JEDEC Method)
20
Resistive or inductive Load
150
125
16
12
100
75
8
4
50
0
25
0
50
100
150
1
10
100111
CASE TEMPERATURE
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC PERLEG
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
20
10
TJ=25
Pulse Width=300us
4
TJ=125
10
2
1.0
1.0
0.1
0.4
0.2
0.1
TJ=25
0.06
0.04
.01
0.02
0
20
40
60
80
100
0.01
0.4 0.5 0.6 0.7 0.8 0.9
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
www.diode.kr
相关型号:
MBR1690CT
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
©2020 ICPDF网 联系我们和版权申明