MBR1680PT [DSK]

DUAL SCHOTTKY RECTIFIERS;
MBR1680PT
型号: MBR1680PT
厂家: Diode Semiconductor Korea    Diode Semiconductor Korea
描述:

DUAL SCHOTTKY RECTIFIERS

文件: 总2页 (文件大小:234K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Diode Semiconductor Korea  
MBR1680PT---MBR16100PT  
VOLTAGE RANGE: 80 - 100 V  
CURRENT: 16 A  
DUAL SCHOTTKY RECTIFIERS  
FEATURES  
High surge capacity.  
TO-3P  
For use in low voltage, high frequency inverters, free  
111wheeling, and polarity protection applications.  
15.8± 0.2  
8.0± 0.2  
5.0± 0.15  
2.0± 0.15  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
Guard ring for over voltage protection.  
φ3.6± 0.15  
PIN  
1
2
3
MECHANICAL DATA  
2.4± 0.2  
2.2± 0.15  
1.2± 0.15  
Case:JEDEC TO-3P,molded plastic body  
Terminals:Solderable per MIL-STD-750,  
3.0± 0.1  
1 1  
Method 2026  
Polarity: As marked  
0.6± 0.1  
5.4± 0.15  
Weight: 0.223 ounce, 6.3 grams  
Position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
MBR  
1680PT  
MBR  
16100PT  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
80  
100  
56  
70  
Maximum DC blocking voltage  
80  
100  
Maximum average forw ard total device11111111  
16  
IF(AV)  
IFSM  
A
A
m rectified current @TC = 125°C  
Peak forw ard surge current 8.3ms single half  
150  
b
sine-w ave superimposed on rated load  
Maximum forw ard  
)
=8.0A,T =25  
(IF  
V
voltage per leg  
(NOTE 1)  
VF  
0.85  
C
Maximum reverse current  
at rated DC blocking voltage  
@TC=25  
1.0  
100  
1.5  
m A  
IR  
@TC=125  
/W  
Maximum thermal resistance (NOTE 2)  
RθJC  
TJ  
- 55 ---- + 150  
- 55 ---- + 150  
Operating junction temperature range  
Storage temperature range  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.  
www.diode.kr  
Diode Semiconductor Korea  
MBR1680PT---MBR16100PT  
FIG.2 -- MAXIMUMNON-REPETITIVEPEAK  
FORWARD SURGE CURRENT PERLEG  
FIG.1 -- FORWARD CURRENT DERATING CURVE  
175  
J
J
T =T max.  
8.3ms Single Half Sine Wave  
(JEDEC Method)  
20  
Resistive or inductive Load  
150  
125  
16  
12  
100  
75  
8
4
50  
0
25  
0
50  
100  
150  
1
10  
100111  
CASE TEMPERATURE  
NUMBER OF CYCLES AT60Hz  
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTIC PERLEG  
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS  
100  
20  
10  
TJ=25  
Pulse Width=300us  
4
TJ=125  
10  
2
1.0  
1.0  
0.1  
0.4  
0.2  
0.1  
TJ=25  
0.06  
0.04  
.01  
0.02  
0
20  
40  
60  
80  
100  
0.01  
0.4 0.5 0.6 0.7 0.8 0.9  
INSTANTANEOUS FORWARD VOLTAGE,VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,  
www.diode.kr  

相关型号:

MBR1690

16.0 AMPS. Schottky Barrier Rectifiers
TSC

MBR1690

SCHOTTKY BARRIER RECTIFIER
BL Galaxy Ele

MBR1690

SCHOTTKY BARRIER RECTIFIER
LUNSURE

MBR1690

Schottky Barrier Rectifier
LGE

MBR1690CT

肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER

MBR1690CT

SCHOTTKY BARRIER RECTIFIER
LUNSURE

MBR1690CT

Maximum Average Forward Rectified Current @TC=100 C
KERSEMI

MBR1690CT

SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR1690DC

D2PAK SURFACE SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR1690FCT

ISOLATION SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR16H35

Schottky Barrier Rectifiers
VISHAY

MBR16H35

Plastic package has Underwriters Laboratory Flammability Classification
KERSEMI