DC1229D [DYNEX]

Gunn Diode, 75GHz Min, 110GHz Max, 0.02W P(O), Gallium Arsenide, Continuous Wave,;
DC1229D
型号: DC1229D
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Gunn Diode, 75GHz Min, 110GHz Max, 0.02W P(O), Gallium Arsenide, Continuous Wave,

连续波 二极管
文件: 总4页 (文件大小:131K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

DC1229E

Gunn Diode, 75GHz Min, 110GHz Max, 0.03W P(O), Continuous Wave,
MICROSEMI

DC1229E

Gunn Diode, 75GHz Min, 110GHz Max, 0.03W P(O), Gallium Arsenide, Continuous Wave,
DYNEX

DC122R

Analog IC
ETC

DC123

Analog IC
ETC

DC1231B

Gunn Diode, 6.2GHz Min, 10.9GHz Max, 0.01W P(O), Continuous Wave,
DYNEX

DC1231C

Gunn Diode, 6.2GHz Min, 10.9GHz Max, 0.015W P(O), Continuous Wave,
DYNEX

DC1232A

Gunn Diode, 13GHz Min, 19GHz Max, 0.005W P(O), Continuous Wave,
DYNEX

DC1233D

Gunn Diode, 0.5GHz Min, 1GHz Max, 0.02W P(O), Continuous Wave,
DYNEX

DC1252G

Gunn Diode, 13GHz Min, 19GHz Max, 0.1W P(O), Continuous Wave,
MICROSEMI

DC1252G

Gunn Diode, 12GHz Min, 18GHz Max, 0.1W P(O), Gallium Arsenide, Continuous Wave,
DYNEX

DC1252H

Gunn Diode, 13GHz Min, 19GHz Max, 0.2W P(O), Continuous Wave,
MICROSEMI

DC1275F

Gunn Diode, 18GHz Min, 26GHz Max, 0.05W P(O), Gallium Arsenide, Continuous Wave,
DYNEX