DCR4910W28
更新时间：2024-09-18 18:03:50
品牌：DYNEX
描述：Silicon Controlled Rectifier, 7493A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element, W, 4 PIN
概述
规格参数
数据手册DCR4910W28 概述
Silicon Controlled Rectifier, 7493A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element, W, 4 PIN 可控硅整流器
DCR4910W28 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Contact Manufacturer | 包装说明： | DISK BUTTON, O-CXDB-X4 |
| 针数： | 4 | Reach Compliance Code： | unknown |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.75 |
| 配置： | SINGLE | 最大直流栅极触发电流： | 250 mA |
| JESD-30 代码： | O-CXDB-X4 | 元件数量： | 1 |
| 端子数量： | 4 | 封装主体材料： | CERAMIC, METAL-SEALED COFIRED |
| 封装形状： | ROUND | 封装形式： | DISK BUTTON |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 认证状态： | Not Qualified |
| 最大均方根通态电流： | 7493 A | 断态重复峰值电压： | 2800 V |
| 重复峰值反向电压： | 2800 V | 表面贴装： | YES |
| 端子形式： | UNSPECIFIED | 端子位置： | UNSPECIFIED |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 触发设备类型： | SCR |
| Base Number Matches： | 1 |
DCR4910W28 数据手册
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PDF下载DCR4910W28
Phase Control Thyristor
Preliminary Information
DS5775-1.5 March 2006 (LN24532)
FEATURES
•
•
Double Side Cooling
High Surge Capability
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
2800V
4770A
65000A
2000V/µs
500A/µs
APPLICATIONS
•
•
•
High Power Drives
* Higher dV/dt selections available
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Conditions
Voltages
VDRM and VRRM
V
DCR4910W28
DCR4910W26
DCR4910W24
2800
2600
2400
Tvj = -40°C to 125°C,
IDRM = IRRM = 200mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM
=
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: W
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR4910W28
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
1/9
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DCR4910W28
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
Double Side Cooled
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
Half wave resistive load
4770
7493
6680
A
A
A
-
-
Continuous (direct) on-state current
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine, Tcase = 125°C
VR = 0
65
kA
21.13
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Rth(j-c)
Thermal resistance – junction to case
Double side cooled
Single side cooled
DC
-
0.00631
0.01115
0.01453
0.0014
0.0028
135
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Anode DC
Cathode DC
Double side
Single side
-
-
Rth(c-h)
Thermal resistance – case to heatsink Clamping force 76kN
(with mounting compound)
-
-
-
Tvj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
-
125
°C
Tstg
Fm
Storage temperature range
Clamping force
-55
68.0
125
°C
84.0
kN
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DCR4910W28
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
-
200
2000
250
mA
dV/dt
dI/dt
Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
V/µs
A/µs
A/µs
Repetitive 50Hz
Non-repetitive
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Gate source 30V, 10Ω,
tr < 0.5µs, Tj = 125°C
-
-
500
VT(TO)
Threshold voltage – Low level
500A to 3000A at Tcase = 125°C
3000A to 10000A at Tcase = 125°C
500A to 3000A at Tcase = 125°C
3000A to 10000A at Tcase = 125°C
VD = 67% VDRM, gate source 30V, 10Ω
tr = 0.5µs, Tj = 25°C
-
0.78
0.90
V
Threshold voltage – High level
-
-
V
rT
On-state slope resistance – Low level
On-state slope resistance – High level
0.1371
0.0957
1.5
mΩ
mΩ
µs
-
tgd
0.5
Delay time
tq
Turn-off time
Tj = 125°C, V R = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
100
250
µs
Tj = 125°C, dI/dt – 1A/µs, V R PEAK ~1700V
VRM ~ 1100V
QS
IL
Stored charge
545
100
2030
1000
µC
Latching current
Tj = 25°C, V D = 5V
mA
IH
Holding current
20
150
mA
Tj = 25°C, R G-K = ∞, ITM = 500A, IT = 5A
3/9
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DCR4910W28
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Gate trigger voltage
Test Conditions
VDRM = 5V, Tcase = 25°C
Max.
Units
VGT
VGD
IGT
1.5
TBD
250
TBD
V
Gate non-trigger voltage
Gate trigger current
At VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
VDRM = 5V, Tcase = 25°C
V
mA
mA
IGD
Gate non-trigger current
CURVES
7000
6000
5000
4000
3000
2000
1000
0
min 125°C
max 125°C
min 25°C
max 25°C
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
Where A = 1.344406
B = - 0.153272
C = -0.000026
D = 0.021061
VTM = A + Bln (IT) + C.IT+D.√IT
these values are valid for Tj = 125°C for I T 500A to 10000A
4/9
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DCR4910W28
SEMICONDUCTOR
16
14
12
10
8
130
120
110
100
90
180
120
90
180
120
90
60
30
60
30
80
70
60
50
6
40
4
30
20
2
10
0
0
0
1000 2000 3000 4000 5000 6000 7000 8000
0
1000 2000 3000 4000 5000 6000 7000 8000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
130
180
120
120
16
90
60
30
110
100
90
80
70
60
50
40
30
20
10
0
d.c.
180
120
90
60
30
14
12
10
8
6
4
2
0
0
1000 2000 3000 4000 5000 6000 7000
Mean on-state current, IT(AV) - (A)
0
1000 2000 3000 4000 5000 6000 7000 8000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
Fig.6 On-state power dissipation – rectangular wave
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DCR4910W28
SEMICONDUCTOR
130
120
110
100
90
130
120
110
100
90
d.c.
180
120
90
d.c.
180
120
90
60
60
30
30
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
1000 2000 3000 4000 5000 6000 7000 8000
0
1000 2000 3000 4000 5000 6000 7000 8000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
1
2
3
4
16
Ri (°C/kW)
Ti (s)
Double side cooled
Anode side cooled
Cathode side cooled
0.8816
1.2993
2.8048
1.3305
Double Side Cooling
0.0106818
1.5197
0.058404 0.3584979
1.1285
0.6312
15.364
3.9054
6.196
Anode Side Cooling
14
Ri (°C/kW)
Ti (s)
3.2398
5.7622
6.013
0.0170581 0.2424644
1.4106 2.4667
0.0158344 0.1786951
Cathode Sided Cooling
Ri (°C/kW)
Ti (s)
6.7451
3.6201
12
Zth
=
[Ri x ( 1-exp. (t/ti))]
Σ
[1]
10
8
∆Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
6
4
Double side cooling
Zth (z)
Anode Side Cooling
Zth (z)
Cathode Sided Cooling
Zth (z)
∆
∆
∆
°
sine.
rect.
0.67
0.97
1.13
1.31
1.51
1.61
°
sine.
0.94
1.08
1.23
1.37
1.47
1.52
rect.
0.64
0.91
1.06
1.22
1.38
1.47
°
θ
sine.
rect.
0.65
0.92
1.07
1.23
1.40
1.49
θ
θ
2
180
120
90
60
30
1.00
1.16
1.33
1.48
1.61
1.66
180
120
90
60
30
180
120
90
60
30
0.95
1.09
1.25
1.38
1.49
1.54
0
0.001
0.01
0.1
1
10
100
15
15
15
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
6/9
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DCR4910W28
SEMICONDUCTOR
180
160
140
120
100
80
60
70
60
50
40
30
Conditions:
Tcase= 125°C
VR = 0
Conditions:
Tcase = 125°C
VR =0
half-sine wave
Pulse width = 10ms
40
20
0
ITSM
60
I2t
40
20
20
1
0
10
Number of cycles
100
1
10
100
Pulse width, tP - (ms)
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
12000
10000
8000
6000
4000
2000
0
450
400
350
300
250
200
150
100
50
Conditions:
Tj = 125oC, VRpeak ~1700V
IRRmax
=
VRM ~ 1100V
35.174*(di/dt)0.8262
snubber as appropriate to
control reverse voltages
IRRmin
21.837*(di/dt)0.8933
=
QS max
2027.7*(di/dt)0.5535
=
Conditions:
Tj = 125oC, VRpeak ~1700V
VRM ~ 1100V
QS min
544.37*(di/dt)0.7194
=
snubber as appropriate to
control reverse voltages
0
0
5
10
15
20
25
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Reverse recovery charge
Fig.13 Reverse recovery current
7/9
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DCR4910W28
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Maximum Minimum
Thickness Thickness
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
(mm)
27.34
27.57
27.69
27.265
27.34
27.57
27.69
27.95
28.31
(mm)
26.79
27.02
27.14
26.715
26.79
27.02
27.14
27.4
Device
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
DCR1594SW28
DCR1595SW42
DCR1596SW52
DCR5450W22
DCR4910W28
DCR4100W42
DCR3640W52
DCR3020W65
DCR2510W85
20°OFFSET (NOM.)
TO GATE TUBE
27.76
Ø120.0 MAX.
Ø84.6 NOM.
CATHODE
GATE
Ø84.6 NOM.
ANODE
FOR PACKAGE HEIGHT
SEE TABLE
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: W
Fig.15 Package outline
8/9
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DCR4910W28
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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