DIM1000NSM33-TS000 [DYNEX]
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES;
| 型号： | DIM1000NSM33-TS000 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES 栅 |
| 文件： | 总8页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIM1000NSM33-TS000
Single Switch IGBT Module
DS6093-1 April 2013 (LN30403)
FEATURES
KEY PARAMETERS
10µs Short Circuit Withstand
VCES
VCE(sat) * (typ)
IC
IC(PK)
3300V
2.2V
1000A
2000A
High Thermal Cycling Capability
(max)
(max)
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
4(C)
2(C)
C
G
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
E
The DIM1000NSM33-TS000 is a single switch 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10μs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
3(E)
1(E)
Fig. 1 Circuit configuration
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1000NSM33-TS000
Note: When ordering, please use the complete part
number
Outline type code: N
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1/8
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DIM1000NSM33-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max. Units
VCES
VGES
IC
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
3300
±20
V
V
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Tcase = 110°C
1000
2000
10.4
320
A
IC(PK)
Pmax
I2t
1ms, Tcase = 140°C
A
Tcase = 25°C, Tj = 150°C
VR = 0, tp = 10ms, Tj = 125ºC
kW
kA2s
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Visol
QPD
Isolation voltage – per module
Partial discharge – per module
6000
10
V
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
AlN
AlSiC
33mm
20mm
>600
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
Rth(j-c)
Parameter
Thermal resistance – transistor
Thermal resistance – diode
Test Conditions
Min
Typ. Max Units
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
-
-
-
-
12
24
8
°C/kW
°C/kW
°C/kW
Rth(j-c)
Thermal resistance – case to heatsink
(per module)
Rth(c-h)
Transistor
-
-
-
-
-
-
-
150
150
125
5
°C
°C
Tj
Junction temperature
Diode
-
Tstg
Storage temperature range
-
-40
°C
Mounting – M6
-
-
-
Nm
Nm
Nm
Screw torque
Electrical connections – M4
Electrical connections – M8
2
10
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000NSM33-TS000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
VGE = 0V, VCE = VCES
Min
Typ
Max Units
4
60
100
1
mA
mA
mA
μA
V
ICES
Collector cut-off current
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = 0V, VCE = VCES, Tcase = 150°C
VGE = ± 20V, VCE = 0V
IGES
Gate leakage current
Gate threshold voltage
VGE(TH)
IC = 80mA, VGE = VCE
5.7
2.2
2.8
3.0
1000
2000
2.4
2.5
2.4
170
17
VGE = 15V, IC = 1000A
V
Collector-emitter saturation
voltage
†
VCE(sat)
VGE = 15V, IC = 1000A, Tj = 125°C
VGE = 15V, IC = 1000A, Tj = 150°C
DC
V
V
IF
Diode forward current
A
IFM
Diode maximum forward current tp = 1ms
A
IF = 1000A
V
Diode forward voltage
(IGBT arm)
†
VF
IF = 1000A, Tj = 125°C
V
IF = 1000A, Tj = 150°C
V
Cies
Qg
Input capacitance
Gate charge
VCE = 25V, VGE = 0V, f = 1MHz
±15V Including external Cge
VCE = 25V, VGE = 0V, f = 1MHz
nF
μC
nF
nH
μ
Cres
LM
Reverse transfer capacitance
Module inductance
Internal resistance
4
15
RINT
135
Tj = 150°C, VCC = 2500V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
SCData
Short circuit current, ISC
3700
A
Note:
†
Measured at the auxiliary terminals
L is the circuit inductance + LM
*
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/8
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DIM1000NSM33-TS000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Test Conditions
Min
Typ. Max Units
td(off)
tf
2700
520
ns
ns
mJ
ns
ns
mJ
μC
A
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Fall time
EOFF
td(on)
tr
Turn-off energy loss
Turn-on delay time
1950
1000
400
Rise time
EON
Qrr
Irr
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
1300
570
IF = 1000A
VCE = 1800V
615
Erec
670
mJ
dIF/dt = 2700A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Test Conditions
Min
Typ. Max Units
td(off)
tf
2750
570
ns
ns
mJ
ns
ns
mJ
μC
A
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Fall time
EOFF
td(on)
tr
Turn-off energy loss
Turn-on delay time
2200
1020
420
Rise time
EON
Qrr
Irr
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
1700
935
IF = 1000A
VCE = 1800V
775
Erec
1150
mJ
dIF/dt = 2700A/μs
Tcase = 150°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Test Conditions
Min
Typ. Max Units
td(off)
tf
2800
550
ns
ns
mJ
ns
ns
mJ
μC
A
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Fall time
EOFF
td(on)
tr
Turn-off energy loss
Turn-on delay time
2300
1030
430
Rise time
EON
Qrr
Irr
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
1850
1070
800
IF = 1000A
VCE = 1800V
Erec
1300
mJ
dIF/dt = 2700A/μs
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000NSM33-TS000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/8
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DIM1000NSM33-TS000
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM1000NSM33-TS000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal Weight: 900g
Module Outline Type Code:
N
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
7/8
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DIM1000NSM33-TS000
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not
constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and
the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety
and any warning requirements are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or
typographical errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it
is the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to
property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a
product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or
explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:-
Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available
on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
Tel:
+44(0)1522 500550
+44(0)1522 500500
Fax:
Tel:
+44(0)1522 500020
+44(0)1522 502753 / 502901
Web:
http://www.dynexsemi.com
Email: Power_solutions@dynexsemi.com
Dynex Semiconductor Ltd. 2013
Technical Documentation – Not for resale.
8/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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