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DIM400GDM33-A000

更新时间：2024-09-18 02:07:11
品牌：DYNEX
描述：Dual Switch IGBT Module Preliminary Information

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DIM400GDM33-A000 概述

Dual Switch IGBT Module Preliminary Information 双路开关IGBT模块的初步信息 IGBT

DIM400GDM33-A000 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Contact Manufacturer包装说明：FLANGE MOUNT, R-PUFM-X10
针数：10Reach Compliance Code：unknown
风险等级：5.64其他特性：HIGH RELIABILITY
外壳连接：ISOLATED最大集电极电流 (IC)：400 A
集电极-发射极最大电压：3300 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码：R-PUFM-X10元件数量：2
端子数量：10封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：MOTOR CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：1700 ns
标称接通时间 (ton)：850 nsBase Number Matches：1

DIM400GDM33-A000 数据手册

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DIM400GDM33-A000  
Dual Switch IGBT Module  
Preliminary Information  
Replaces September 2001, version DS5495-1.2  
DS5495-1.2 September 2001  
FEATURES  
KEY PARAMETERS  
VCES  
VCE(sat)  
IC  
3300V  
3.2V  
400A  
800A  
■ 10µs Short Circuit Withstand  
■ High Thermal Cycling Capability  
■ Non Punch Through Silicon  
■ Isolated MMC Base with AlN Substrates  
(typ)  
(max)  
(max)  
IC(PK)  
APPLICATIONS  
■ High Reliability Inverters  
■ Motor Controllers  
■ Traction Drives  
External connection  
E1  
C2  
E1  
C2  
G2  
G1  
The Powerline range of high power modules includes half  
bridge, chopper, dual and single switch configurations covering  
voltages from 600V to 3300V and currents up to 2400A.  
C1  
E2  
C1  
E2  
The DIM400GDM33-A000 is a dual switch 3300V, n channel  
enhancement mode, insulated gate bipolar transistor (IGBT)  
module. The IGBT has a wide reverse bias safe operating area  
(RBSOA) plus full 10µs short circuit withstand. This device is  
optimised for traction drives and other applications requiring high  
thermal cycling capability.  
Fig. 1 Dual switch circuit diagram  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
1
C
E1  
C2  
1
E
C1  
E2  
1
G
ORDERING INFORMATION  
Order As:  
2
C
2
G
DIM400GDM33-A000  
Note: When ordering, please use the whole part number.  
2
E
2
1
E
C
- Aux Emitter  
- Aux Collector  
Outline type code: G  
(See package details for further information)  
Fig. 2 Electrical connections - (not to scale)  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/10  
www.dynexsemi.com  
DIM400GDM33-A000  
ABSOLUTE MAXIMUM RATINGS - PER ARM  
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme  
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety  
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.  
Tcase = 25˚C unless stated otherwise  
Symbol  
VCES  
VGES  
IC  
Parameter  
Collector-emitter voltage  
Gate-emitter voltage  
Test Conditions  
Max. Units  
V
GE = 0V  
3300  
±20  
400  
800  
4.8  
V
V
-
Continuous collector current  
Peak collector current  
Tcase = 80˚C  
A
IC(PK)  
Pmax  
I2t  
1ms, Tcase = 115˚C  
A
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C  
kW  
kA2s  
V
Diode I2t value  
VR = 0, tp = 10ms, Tvj = 125˚C  
80  
Visol  
Isolation voltage - per module  
Partial discharge - per module  
Commoned terminals to base plate. AC RMS, 1 min, 50Hz  
IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS  
6000  
10  
QPD  
pC  
2/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com  
DIM400GDM33-A000  
THERMAL AND MECHANICAL RATINGS  
Internal insulation material: AlN  
Baseplate material:  
Creepage distance:  
Clearance:  
AlSiC  
33mm  
20mm  
CTI (Critical Tracking Index): 175  
Min.  
Typ.  
Max.  
Symbol  
Parameter  
Test Conditions  
Continuous dissipation -  
junction to case  
Units  
-
-
26  
Rth(j-c)  
Thermal resistance - transistor (per arm)  
˚C/kW  
-
-
-
-
52  
6
Rth(j-c)  
Rth(c-h)  
Tj  
Thermal resistance - diode (per arm)  
Continuous dissipation -  
junction to case  
˚C/kW  
˚C/kW  
Thermal resistance - case to heatsink  
(per module)  
Mounting torque 5Nm  
(with mounting grease)  
Transistor  
-
-
-
-
-
-
-
150  
125  
125  
5
Junction temperature  
˚C  
˚C  
-
Diode  
–40  
Tstg  
-
Storage temperature range  
Screw torque  
-
˚C  
-
-
-
Mounting - M6  
Nm  
Nm  
Nm  
2
Electrical connections - M4  
Electrical connections - M8  
10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
3/10  
www.dynexsemi.com  
DIM400GDM33-A000  
ELECTRICAL CHARACTERISTICS  
Tcase = 25˚C unless stated otherwise.  
Min.  
Typ.  
-
Symbol  
Parameter  
Test Conditions  
VGE = 0V, VCE = VCES  
VGE = 0V, VCE = VCES, Tcase = 125˚C  
GE = ±20V, VCE = 0V  
Max. Units  
-
-
ICES  
Collector cut-off current  
2
mA  
mA  
µA  
V
-
30  
IGES  
Gate leakage current  
V
-
-
4
VGE(TH)  
VCE(sat)  
Gate threshold voltage  
IC = 40mA, VGE = VCE  
4.5  
-
5.5  
3.2  
4.0  
400  
800  
2.5  
2.5  
90  
6.5  
Collector-emitter saturation voltage  
VGE = 15V, IC = 400A  
-
-
-
-
-
-
-
-
-
-
-
-
V
VGE = 15V, IC = 400A, , Tcase = 125˚C  
-
V
IF  
Diode forward current  
DC  
-
A
IFM  
VF  
Diode maximum forward current  
Diode forward voltage  
tp = 1ms  
-
A
IF = 400A  
-
V
IF = 400A, Tcase = 125˚C  
-
V
Cies  
Cres  
Input capacitance  
VCE = 25V, VGE = 0V, f = 1MHz  
-
nF  
nF  
nH  
mΩ  
A
-
5
Reverse transfer capacitance  
Module inductance - per arm  
Internal transistor resistance - per arm  
Short circuit. ISC  
VCE = 25V, VGE = 0V, f = 1MHz  
-
25  
LM  
-
-
-
0.26  
2600  
2200  
RINT  
SCData  
Tj = 125˚C, VCC = 2500V,  
I1  
-
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2  
-
A
IEC 60747-9  
Note:  
L* is the circuit inductance + LM  
4/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com  
DIM400GDM33-A000  
ELECTRICAL CHARACTERISTICS  
Tcase = 25˚C unless stated otherwise  
Min.  
Typ.  
1450  
200  
500  
500  
300  
650  
12  
Symbol  
td(off)  
tf  
Parameter  
Turn-off delay time  
Test Conditions  
IC = 400A  
Max. Units  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
Fall time  
VGE = ±15V  
EOFF  
td(on)  
tr  
Turn-off energy loss  
Turn-on delay time  
Rise time  
VCE = 1800V  
mJ  
ns  
RG(ON) = RG(OFF) = 4.7Ω  
Cge = 68nF  
ns  
EON  
Qg  
Turn-on energy loss  
Gate charge  
L ~ 100nH  
mJ  
µC  
µC  
A
280  
400  
300  
Qrr  
Diode reverse recovery charge  
Diode reverse recovery current  
Diode reverse recovery energy  
IF = 400A, VR = 1800V,  
Irr  
dIF/dt = 2800A/µs  
Erec  
mJ  
Tcase = 125˚C unless stated otherwise  
Parameter  
Turn-off delay time  
Test Conditions  
IC = 400A  
Min.  
Typ.  
1700  
250  
600  
550  
300  
850  
450  
430  
550  
Max. Units  
Symbol  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
mJ  
ns  
ns  
mJ  
µC  
A
Fall time  
VGE = ±15V  
EOFF  
td(on)  
tr  
Turn-off energy loss  
Turn-on delay time  
VCE = 1800V  
R
G(ON) = RG(OFF) = 4.7Ω  
Rise time  
Cge = 68nF  
EON  
Qrr  
Turn-on energy loss  
Diode reverse recovery charge  
Diode reverse recovery current  
Diode reverse recovery energy  
L ~ 100nH  
IF = 400A, VR = 1800V,  
Irr  
dIF/dt = 2000A/µs  
Erec  
mJ  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
5/10  
www.dynexsemi.com  
DIM400GDM33-A000  
TYPICAL CHARACTERISTICS  
800  
800  
700  
600  
500  
400  
300  
200  
100  
0
Common emitter.  
Tcase = 25˚C  
Common emitter.  
Tcase = 125˚C  
700  
600  
500  
400  
300  
200  
100  
0
VGE = 20V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 20V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
Collector-emitter voltage, Vce - (V)  
Collector-emitter voltage, Vce - (V)  
Fig. 3 Typical output characteristics  
Fig. 4 Typical output characteristics  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1400  
1200  
1000  
800  
600  
400  
200  
0
Conditions:  
case = 125˚C  
Rg = 4.7 Ohms  
cc = 1800V  
ge = 68nF  
Conditions:  
case = 125˚C  
C = 400A  
cc = 1800V  
ge = 68nF  
T
T
I
V
C
V
C
Eon  
Eoff  
Erec  
Eon  
Eoff  
Erec  
0
100  
200  
300  
400  
500  
3
4
5
6
7
8
9
10  
11  
12  
Gate resistance, Rg - (Ohms)  
Collector current, IC - (A)  
Fig. 5 Typical switching energy vs collector current  
Fig. 6 Typical switching energy vs gate resistance  
6/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com  
DIM400GDM33-A000  
800  
700  
600  
500  
400  
300  
200  
100  
0
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
Tj = 25˚C  
Tj = 125˚C  
Chip  
Module  
Tcase = 125˚C  
Vge 15V  
g(min) = 4.7Ω  
=
R
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Collector emitter voltage, Vce - (V)  
Forward voltage, VF - (V)  
Fig. 7 Diode typical forward characteristics  
Fig. 8 Reverse bias safe operating area  
700  
600  
500  
1000  
100  
10  
400  
300  
200  
100  
0
Ic(max) DC  
1
Tvj = 125˚C, Tc = 80˚C  
0
1
0
500  
1000  
1500  
2000  
2500  
3000  
3500  
10  
100  
1000  
10000  
Collector emitter voltage, Vce - (V)  
Reverse voltage, VR - (V)  
Fig. 9 Diode reverse bias safe operating area  
Fig. 10 Forward bias safe operating area  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
7/10  
www.dynexsemi.com  
DIM400GDM33-A000  
700  
600  
100  
Diode  
Transistor  
500  
400  
10  
300  
200  
100  
1
1
2
3
4
IGBT  
Ri (˚C/KW)  
τi (ms)  
0.7494 3.9034 5.5554 16.8032  
0.0876 3.7713 33.5693 236.8023  
Diode  
Ri (˚C/KW)  
1.4772  
7.823 11.1256 33.6616  
τi (ms)  
0.0843 3.7205 33.2138 236.5275  
0.1  
0.001  
0
0
10  
0.01  
0.1  
Pulse width, tp - (s)  
1
20  
40  
60  
80  
100  
120  
140  
160  
Case temperature, Tcase - (˚C)  
Fig. 11 Transient thermal impedance  
Fig. 12 DC current rating vs case temperature  
8/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com  
DIM400GDM33-A000  
PACKAGE DETAILS  
Forfurtherpackageinformation, please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm, unless  
stated otherwise. DO NOT SCALE.  
E2 - Aux Emitter  
C1 - Aux Collector  
C1  
E1  
E1  
C1  
G1  
C2  
C2  
E2  
G2  
E2  
140  
160  
Nominal weight: 1000g  
Module outline type code: G  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
9/10  
www.dynexsemi.com  
DIM400GDM33-A000  
POWER ASSEMBLY CAPABILITY  
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic  
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and  
current capability of our semiconductors.  
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The  
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of  
our customers.  
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete  
Solution (PACs).  
HEATSINKS  
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise  
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is  
available on request.  
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer  
service office.  
http://www.dynexsemi.com  
e-mail: power_solutions@dynexsemi.com  
HEADQUARTERS OPERATIONS  
DYNEX SEMICONDUCTOR LTD  
Doddington Road, Lincoln.  
Lincolnshire. LN6 3LF. United Kingdom.  
Tel: 00-44-(0)1522-500500  
CUSTOMER SERVICE CENTRES  
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33  
North America Tel: (613) 723-7035. Fax: (613) 723-1518.  
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020  
SALES OFFICES  
Fax: 00-44-(0)1522-500550  
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33  
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /  
Tel: (949) 733-3005. Fax: (949) 733-2986.  
DYNEX POWER INC.  
99 Bank Street, Suite 410,  
Ottawa, Ontario, Canada, K1P 6B9  
Tel: 613.723.7035  
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020  
Fax: 613.723.1518  
Toll Free: 1.888.33.DYNEX (39639)  
These offices are supported by Representatives and Distributors in many countries world-wide.  
© Dynex Semiconductor 2001 Publication No. DS5495-2 Issue No. 2.0 October 2001  
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM  
Datasheet Annotations:  
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-  
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.  
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.  
Advance Information: The product design is complete and final characterisation for volume production is well in hand.  
No Annotation: The product parameters are fixed and the product is available to datasheet specification.  
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as  
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves  
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such  
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication  
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury  
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.  
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.  
10/10  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
www.dynexsemi.com  

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