DSF8025SE20 [DYNEX]
Fast Recovery Diode; 快恢复二极管
| 型号： | DSF8025SE20 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Fast Recovery Diode |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSF8025SE
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4146-4.4
DS4146-5.0 January 2000
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
2500V
650A
7500A
540µC
5.0µs
trr
■ High Frequency Rectification
■ UPS
FEATURES
■ Double side cooling
■ High surge capability
■ Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Conditions
Reverse Voltage
VRRM
V
DSF8025SE25
DSF8025SE24
DSF8025SE23
DSF8025SE22
DSF8025SE21
DSF8025SE20
VRSM = VRRM + 100V
2500
2400
2300
2200
2100
2000
Lower voltage grades available.
Outline type code: E
See Package Details for further information.
CURRENT RATINGS
Max.
Units
Symbol
Parameter
Conditions
Double Side Cooled
IF(AV)
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
650
1020
785
A
A
A
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
IF(RMS)
IF
T
case = 65oC
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Half wave resistive load, Tcase = 65oC
case = 65oC
Tcase = 65oC
385
604
465
A
A
A
T
Continuous (direct) forward current
1/8
DSF8025SE
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
7.5
Units
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 0% VRRM, Tj = 150oC
281 x 103
6.0
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 50% VRRM, Tj = 150oC
180 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.047 oC/W
0.094 oC/W
0.094 oC/W
0.018 oC/W
0.036 oC/W
Symbol
Parameter
dc
-
-
-
-
-
Double side cooled
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
Cathode dc
Double side
Clamping force 8.0kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
Single side
oC
oC
kN
Tvj
Tstg
-
On-state (conducting)
-
150
175
9.0
Virtual junction temperature
Storage temperature range
-55
7.0
Clamping force
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
At 1000A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
Max.
2.3
VFM
IRRM
trr
Forward voltage
-
-
-
V
50
mA
Peak reverse current
Reverse recovery time
5.0
µs
QRA1
IRM
K
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
540
235
-
µC
A
Tcase = 150oC, VR = 100V
1.8
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
1.48
0.8
-
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
70
2/8
DSF8025SE
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
k = t1/t2
dIR/dt
t1
t2
τ
0.5x IRR
IRR
CURVES
4000
3500
3000
2500
2000
1500
1000
500
Measured under pulse conditions
Tj = 150˚C
Tj = 25˚C
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage VF - (V)
Fig. 1 Maximum (limit) forward characteristics
3/8
DSF8025SE
500
400
300
200
100
0
Measured under pulse conditions
Tj = 150˚C
Tj = 25˚C
1.00
1.25
1.50
1.75
2.00
Instantaneous forward voltage VF - (V)
Fig. 2 Maximum (limit) forward characteristics
250
200
150
100
50
Current
waveform
VFR
Voltage
waveform
di = δy
dt δx
δy
δx
Tj = 125˚C limit
Tj = 25˚C limit
0
0
500
1000
1500
2000
Rate of rise of forward current dIF/dt - (A/µs)
Fig. 3 Transient forward voltage vs rate of rise of forward current
4/8
DSF8025SE
100000
10000
1000
50µs
Conditions:
Tj = 150˚C,
VR = 100V
IF
Q =
∫
S
0
Q
S
tp = 1ms
dIR/dt
IRR
IF = 2000A
IF = 1000A
IF = 200A
100
10
100
1000
10000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 4 Recovered charge
10000
1000
100
Conditions:
Tj = 150˚C,
VR = 100V
A
B
C
A: IF = 2000A
B: IF = 1000A
C: IF = 200A
10
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 5 Typical reverse recovery current vs rate of fall of forward current
5/8
DSF8025SE
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
1.0
10
Time - (s)
Fig. 6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
DSF8025SE
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode
Ø42max
Ø25nom.
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 8kN ±10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
Recommendations for clamping power semiconductors
Thyristor and diode measurement with a multi-meter
Use of VTO, rT on-state characteristic
AN4506
AN4839
AN4853
AN5001
7/8
DSF8025SE
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4146-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
8/8
相关型号：
©2020 ICPDF网 联系我们和版权申明