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MP02HBN130-18 [DYNEX]

Silicon Controlled Rectifier, 210A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, MP02, 5 PIN;

MP02HBN130-18


元器件型号：	MP02HBN130-18
生产厂家：	Dynex Semiconductor
描述和应用：	Silicon Controlled Rectifier, 210A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, MP02, 5 PIN 局域网栅栅极
PDF文件：	总8页 (文件大小：111K)
下载文档：	下载PDF数据表文档文件
型号参数：MP02HBN130-18参数

MP02HBN175-12

Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBN190-10

Silicon Controlled Rectifier, 300A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBN190-12

暂无描述

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0 DYNEX

MP02HBP130-16

Silicon Controlled Rectifier, 210A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP175-10

Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP175-10

Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP175-12

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(RRM),

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0 MICROSEMI

MP02HBP175-12

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(RRM),

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0 MICROSEMI

MP02HBP175-14

Silicon Controlled Rectifier, 275A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP175-14

Silicon Controlled Rectifier, 175000mA I(T), 1400V V(RRM),

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0 MICROSEMI

MP02HBP175-14

Silicon Controlled Rectifier, 175000mA I(T), 1400V V(RRM),

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0 MICROSEMI

MP02HBP175-14

Silicon Controlled Rectifier, 275A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP190-08

Silicon Controlled Rectifier, 300A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, MP02, 5 PIN

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0 DYNEX

MP02HBP190-10

Silicon Controlled Rectifier, 190000mA I(T), 1000V V(RRM),

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0 MICROSEMI

MP02HBP190-10

Silicon Controlled Rectifier, 190000mA I(T), 1000V V(RRM),

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0 MICROSEMI

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