MP02TT800-13-W12 [DYNEX]

Silicon Controlled Rectifier, 510A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 2 Element, MP02-W12, 7 PIN;
MP02TT800-13-W12
型号: MP02TT800-13-W12
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Silicon Controlled Rectifier, 510A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 2 Element, MP02-W12, 7 PIN

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MP02TT800  
Dual Thyristor Water Cooled Welding Module  
Preliminary Information  
DS5435-1.1 June 2001  
FEATURES  
KEY PARAMETERS  
VDRM  
1600V  
510A  
805A  
6800A  
3000V  
Dual Device Module  
ILINE(cont.)  
ILINE(20cy./50%)  
ITSM(per arm)  
Visol  
Electrically Isolated Package  
Pressure Contact Construction  
International Standard Footprint  
Alumina (Non Toxic) Isolation Medium  
Integral Water Cooled Heatsink  
G1 K1 K2 G2  
2
3
1
APPLICATIONS  
Welding  
Fig. 1 Circuit diagram  
VOLTAGE RATINGS  
Type Number  
Repetitive Peak  
Voltages  
VDRM VRRM  
V
Conditions  
K2  
G2  
MP02TT800-16  
MP02TT800-15  
MP02TT800-14  
MP02TT800-13  
1600  
1500  
1400  
1300  
Tvj = 0˚ to 125˚C,  
IDRM = IRRM = 30mA  
K1 G1  
2
3
1
VDSM = VRSM  
=
VDRM = VRRM + 100V  
respectively  
Lower voltage grades available  
ORDERING INFORMATION  
Order As:  
MP02TT800-XX W12  
MP02TT800-XX W13  
1/4 - 18NPT  
1/4 BSP connection  
Outline type code: MP02 W12/W13  
XX shown in the part number about represents VDRM/100  
selection required, e.g. MP02TT800-14-W12  
(See package details for further information)  
Fig. 2 Electrical connections - (not to scale)  
Note: When ordering, please use the whole part number.  
Auxiliary gate and cathode leads can be ordered separately.  
1/8  
www.dynexsemi.com  
MP02TT800  
ABSOLUTE MAXIMUM CURRENT RATINGS  
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme  
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety  
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.  
Symbol  
Parameter  
Max. controllable RMS line  
current - single phase  
Test Conditions  
Max.  
510  
450  
920  
805  
6.8  
Units  
A
ILINE  
Continuous 50/60Hz  
4.5 Ltr/min  
Twater (in) = 25˚C  
water (in) = 40˚C  
T
A
20 cycles, 50% duty cycle  
4.5 Ltr/min  
Twater (in) = 25˚C  
Twater (in) = 40˚C  
A
A
ITSM  
I2t  
ITSM  
I2t  
Surge (non-repetitive) on-current  
I2t for fusing  
10ms half sine, Tj = 125˚C  
kA  
VR = 0  
0.231 x 106 A2s  
5.5 kA  
0.15 x 106 A2s  
Surge (non-repetitive) on-current  
I2t for fusing  
10ms half sine, Tj = 125˚C  
VR = 50% VDRM  
Visol  
Isolation voltage  
Commoned terminals to base plate.  
AC RMS, 1 min, 50Hz  
3000  
V
THERMAL AND MECHANICAL RATINGS  
Min.  
Symbol  
Parameter  
Thermal resistance - junction to water  
(per thyristor)  
Test Conditions  
dc, 4.5 Ltr/min  
Max.  
0.3  
Units  
˚C/kW  
˚C/kW  
˚C/kW  
˚C  
-
Rth(j-c)  
-
Half wave, 4.5 Ltr/min  
3 Phase, 4.5 Ltr/min  
Reverse (blocking)  
-
0.32  
0.33  
125  
125  
-
-
-
Tvj  
Tstg  
-
Virtual junction temperature  
Storage temperature range  
Screw torque  
40  
˚C  
5 (44)  
Mounting - M6  
Electrical connections - M6  
-
Nm (lb.ins)  
-
-
5 (44) Nm (lb.ins)  
-
Weight (nominal)  
1200  
g
2/8  
www.dynexsemi.com  
MP02TT800  
DYNAMIC CHARACTERISTICS  
Min.  
Symbol  
IRRM/IDRM  
dV/dt  
Parameter  
Test Conditions  
At VRRM/VDRM, Tj = 125˚C  
Max. Units  
Peak reverse and off-state current  
Linear rate of rise of off-state voltage  
Rate of rise of on-state current  
-
-
-
30  
mA  
To 67% VDRM, Tj = 125˚C  
From 67% VDRM to 200A, gate source 10V, 5  
tr = 0.5µs, Tj = 125˚C  
1000  
500  
V/µs  
A/µs  
dI/dt  
-
-
0.98  
0.75  
V
VT(TO)  
rT  
Threshold voltage  
At Tvj = 125˚C  
On-state slope resistance  
At Tvj = 125˚C  
mΩ  
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the  
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these  
figures due to the impedance of the busbar from the terminal to the semiconductor.  
GATE TRIGGER CHARACTERISTICS AND RATINGS  
Parameter  
Gate trigger voltage  
Test Conditions  
VDRM = 5V, Tcase = 25oC  
DRM = 5V, Tcase = 25oC  
Max.  
3
Units  
V
Symbol  
VGT  
IGT  
Gate trigger current  
V
150  
0.25  
30  
mA  
V
VGD  
Gate non-trigger voltage  
Peak forward gate voltage  
Peak forward gate voltage  
Peak reverse gate voltage  
Peak forward gate current  
Peak gate power  
At VDRM Tcase = 125oC  
Anode positive with respect to cathode  
V
VFGM  
VFGN  
VRGM  
IFGM  
Anode negative with respect to cathode  
0.25  
5
V
-
V
Anode positive with respect to cathode  
10  
A
See table fig. 5  
100  
5
W
W
PGM  
PG(AV)  
Mean gate power  
-
3/8  
www.dynexsemi.com  
MP02TT800  
2000  
20  
Measured under pulse conditions  
1500  
1000  
500  
0
180  
140  
100  
15  
10  
I2t  
Tj = 125˚C  
5
0
60  
10  
1
2
3 4 5  
50  
20 30  
10  
1
0.5  
1.0  
1.5  
2.0  
2.5  
Instantaneous on-state voltage, VT - (V)  
ms  
cycles at 50Hz  
Duration  
Fig. 3 Maximum (limit) on-state characteristics  
Fig. 4 Surge (non-repetitive) on-state current vs time  
(with 50% VRSM at Tcase = 125˚C)  
100  
VFGM  
10  
1.0  
Table gives pulse power PGM in watts  
Pulse Pulse Frequency  
Width  
µs  
Hz  
100 400  
50  
100W  
75W  
50W  
20  
25  
100  
500  
1ms  
10ms  
100 100  
100 100  
100 100  
100  
100  
100  
100  
100  
10  
10W  
5W  
100  
50  
-
25  
-
-
0.1  
Tj = 25˚C  
Tj = 125˚C  
1.0  
0.01  
mit 1%  
Upper limit 99%  
VGD  
0.1  
Lower li  
0.001  
0.001  
0.001  
0.01  
0.1  
1.0  
10  
IFGM  
0.01  
0.1  
1
10  
1000  
100  
Gate trigger current, IGT - (A)  
Time - (s)  
Fig. 5 Gate characteristics  
Fig. 6 Transient thermal impedance - dc  
4/8  
www.dynexsemi.com  
MP02TT800  
3000  
3000  
Twater = 30˚C  
Twater = 25˚C  
Number of cycles  
Number of cycles  
1
3
5
10  
20  
30  
50  
100  
1
3
5
10  
20  
30  
50  
100  
2500  
2000  
1500  
2500  
2000  
1500  
1000  
500  
1
1000  
500  
1
1
10  
100  
1
10  
100  
Duty cycles - (%)  
Duty cycles - (%)  
Fig. 7 Single phase welding rating @Twater = 25˚C  
Fig. 8 Single phase welding rating @Twater = 30˚C  
3000  
3000  
Twater = 40˚C  
Twater = 50˚C  
Number of cycles  
Number of cycles  
1
3
5
10  
20  
30  
50  
100  
1
3
5
10  
20  
30  
50  
100  
2500  
2000  
1500  
2500  
2000  
1500  
1000  
500  
1
1000  
500  
1
1
10  
100  
1
10  
100  
Duty cycles - (%)  
Duty cycles - (%)  
Fig. 9 Single phase welding rating @Twater = 40˚C  
Fig. 10 Single phase welding rating @Twater = 50˚C  
5/8  
www.dynexsemi.com  
MP02TT800  
PACKAGE DETAILS  
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.  
DO NOT SCALE.  
23  
23  
K2  
24  
15  
5
G2  
Ø6.5  
13  
80  
K1  
G1  
2 Off water connectors  
1/4 - 18 NTP (W12)  
2
3
1
M6  
2.8 X 0.8  
23.8  
21.6  
50.8  
94  
Water-way plug  
2 Off Holes M3 x 0.5  
10 deep  
Recommended fixings for mounting: M6 socket head cap screws.  
Auxiliary gate and cathode leads can be ordered separately.  
Nominal weight: 1200g  
Module outline type code: MP02-W12  
6/8  
www.dynexsemi.com  
MP02TT800  
PACKAGE DETAILS  
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.  
DO NOT SCALE.  
23  
23  
K2  
24  
15  
5
G2  
6.5  
13  
80  
K1  
G1  
2 Off water connectors  
1/4 BSP (W13)  
2
3
1
M6  
2.8 X 0.8  
23.8  
21.6  
50.8  
94  
Water-way plug  
2 Off Holes M3 x 0.5  
10 deep  
Recommended fixings for mounting: M6 socket head cap screws.  
Auxiliary gate and cathode leads can be ordered separately.  
Nominal weight: 1200g  
Module outline type code: MP02-W13  
7/8  
www.dynexsemi.com  
POWER ASSEMBLY CAPABILITY  
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic  
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages  
and current capability of our semiconductors.  
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.  
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of  
our customers.  
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete  
Solution (PACs).  
HEATSINKS  
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to  
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow  
rates) is available on request.  
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or  
Customer Services.  
http://www.dynexsemi.com  
e-mail: power_solutions@dynexsemi.com  
HEADQUARTERS OPERATIONS  
CUSTOMER SERVICE  
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020  
DYNEX SEMICONDUCTOR LTD  
Doddington Road, Lincoln.  
SALES OFFICES  
Lincolnshire. LN6 3LF. United Kingdom.  
Tel: +44-(0)1522-500500  
Fax: +44-(0)1522-500550  
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.  
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.  
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.  
Fax: +44 (0)1522 500020  
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /  
Tel: (949) 733-3005. Fax: (949) 733-2986.  
These offices are supported by Representatives and Distributors in many countries world-wide.  
© Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN  
UNITED KINGDOM  
Datasheet Annotations:  
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-  
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.  
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.  
Advance Information: The product design is complete and final characterisation for volume production is well in hand.  
No Annotation: The product parameters are fixed and the product is available to datasheet specification.  
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded  
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company  
reservestherighttoalterwithoutpriornoticethespecification, designorpriceofanyproductorservice. Informationconcerningpossiblemethodsofuseisprovidedasaguideonlyanddoesnotconstituteanyguarantee  
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure  
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury  
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.  
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.  
www.dynexsemi.com  

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