MP03HBP175-10 [DYNEX]
Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MP03, 5 PIN;
| 型号： | MP03HBP175-10 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MP03, 5 PIN 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP03XXX175 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces January 2000 version, DS5098-4.0
DS5098-5.0 July 2002
FEATURES
KEY PARAMETERS
■ Dual Device Module
VDRM
1600V
6800A
175A
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
ITSM
IT(AV)(per arm)
Visol
3000V
■ Alumina (non-toxic) Isolation Medium
Code
Circuit
APPLICATIONS
HBT
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
HBP
HBN
■ AC Phase Control
Fig.1 Circuit diagrams
VOLTAGE RATINGS
Type
Number
Repetitive
Peak
Conditions
Voltages
VDRM VRRM
Tvj = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM
MP03XXX175-16
MP03XXX175-14
MP03XXX175-12
MP03XXX175-10
1600
1400
=
1200
VDRM & VRRM + 100V
respectively
1000
Lower voltage grades available.
Module type code: MP03.
For further information see Package Details.
ORDERING INFORMATION
Order As:
Fig. 2 Electrical connections - (not to scale)
MP03HBT175-16 or MP03HBT175-14 or
MP03HBT175-12 or MP03HBT175-10
MP03HBP175-16 or MP03HBP175-14 or
MP03HBP175-12 or MP03HBP175-10
MP03HBN175-16 or MP03HBN175-14 or
MP03HBN175-12 or MP03HBN175-10
Note: When ordering, please use the complete part number.
1/8
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MP03XXX175 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Half wave resistive load
Max. Units
IT(AV)
Mean on-state current
T
case = 75˚C
175
146
275
6.8
A
A
Tcase = 85˚C
IT(RMS
ITSM
I2t
RMS value
Tcase = 75˚C
A
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 125˚C
VR = 0
kA
231 x 103 A2s
ITSM
I2t
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 125˚C
VR = 50% VDRM
5.5
kA
150 x 103 A2s
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
THERMAL AND MECHANICAL RATINGS
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Test Conditions
Min.
Max.
Units
˚C/kW
˚C/kW
˚C/kW
˚C/kW
Symbol
Rth(j-c)
dc
-
-
-
-
0.21
0.22
0.23
0.05
Half wave
3 Phase
Rth(c-hs)
Thermal resistance - case to heatsink
(per thyristor or diode)
Mounting torque = 5Nm
with mounting compound
-
Tvj
Tstg
-
Virtual junction temperature
Storage temperature range
Screw torque
Reverse (blocking)
125
125
˚C
˚C
–40
-
Mounting - M6
Electrical connections - M5
-
-
-
-
5 (44) Nm (lb.ins)
6 (55) Nm (lb.ins)
-
Weight (nominal)
950
g
2/8
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MP03XXX175 Series
DYNAMIC CHARACTERISTICS - THYRISTOR
Min.
Symbol
IRRM/IDRM
dV/dt
Parameter
Test Conditions
At VRRM/VDRM, Tj = 125˚C
Max. Units
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
-
-
-
30
mA
V/µs
A/µs
To 67% VDRM, Tj = 125˚C
From 67% VDRM to 500A,
gate source 10V, 5 ,
1000
500
dI/dt
Repetitive 50Hz
tr = 0.5µs, Tj = 125˚C
-
-
0.75
0.75
V
VT(TO)
rT
Threshold voltage
At Tvj = 125˚C. See note 1
At Tvj = 125˚C. See note 1
On-state slope resistance
m
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Gate trigger voltage
Test Conditions
VDRM = 5V, Tcase = 25oC
Max.
3.0
150
0.25
30
Units
V
Symbol
VGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
mA
V
IGT
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
VDRM = 5V, Tcase = 25oC
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
V
Anode negative with respect to cathode
0.25
5
V
-
V
Anode positive with respect to cathode
10
A
See table fig. 5
100
5
W
W
PGM
PG(AV)
Mean gate power
-
3/8
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MP03XXX175 Series
15
10
5
2000
Measured under pulse conditions
Tj = 125˚C
180
140
100
60
1500
1000
500
0
I2t
0
1
10
1
2
3 45
50
20 30
10
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, VT - (V)
ms
cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% VRRM at Tcase = 125˚C)
100
0.3
Table gives pulse power PGM in watts
Pulse Pulse Frequency Hz
Width
Rth(j-hs)
100
400
µs
50
100W
75W
50W
V
FGM
100
100
100
100
50
100
100
100
25
-
20
25
100
100
100 100
500 100
1ms 100
10ms 10
Rth(j-c)
10W
5W
10
-
-
0.2
Tj = 25˚C
Tj = 125˚C
1.0
0.1
1%
limit
Upper limit 99%
V
GD
Lower
0.1
0.001
0
0.001
0.01
0.1
1.0
10
FGM
0.010
0.100
1.0
10
100
I
Time - (s)
Gate trigger current, IGT - (A)
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
4/8
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MP03XXX175 Series
350
300
250
200
150
100
50
350
300
250
200
150
100
50
d.c.
180˚
120˚
90˚
180˚
120˚
60˚
90˚
60˚
30˚
30˚
0
0
0
0
50
100
150
200
250
300
50
100
150
200
250
300
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
140
140
120
100
80
120
100
80
d.c.
60
60
40
40
20
20
30˚
60˚ 90˚ 120˚
180˚
30˚
60˚ 90˚ 120˚
180˚
0
0
0
280
20 40 60 80 100 120 140 160 180 200 220 240 260
20 40 60 80 100 120 140 160 180 200 220 240
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig. 9 Maximum permissible case temperature vs on-state
Fig. 10 Maximum permissible case temperature vs on-state
current at specified conduction angles, sine wave 50/60Hz current at specified conduction angles, square wave 50/60Hz
5/8
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MP03XXX175 Series
1200
Rth(hs-a) ˚C/W
R- Load
0.02
0.04
1000
800
600
400
200
L- Load
0.08
0.10
0.12
0.15
0.20
0.30
0.40
0
0
20
40
60
80
100
0
200
400
600
Maximum ambient temperature - (˚C)
D.C. output current - (A)
Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal)
1200
Rth(hs-a) ˚C/W
0.04
0.02
1000
800
600
400
200
R & L - Load
0.08
0.10
0.12
0.15
0.20
0.30
0.40
0
0
20
40
60
80
100
0
200
400
600
D.C. output current - (A)
Maximum ambient temperature - (˚C)
Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal)
6/8
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MP03XXX175 Series
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
K2 G2
K2
3
G2
1
1
1
2
2
3
1
G1
K1
Circuit type: HBN
G1 K1
80
2.8x0.8
2
3
3
115
3x M8
Circuit type: HBP
G1 K1 K2 G2
2
Circuit type: HBT
92
Recommended fixings for mounting: M5 socket head cap screws.
Nominal weight: 950g
Auxiliary gate/cathode leads are not supplied but may be purchsed separately.
Module outline type code: MP03
MOUNTING RECOMMENDATIONS
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
Adequate heatsinking is required to maintain the base
temperature at 75˚C if full rated current is to be achieved. Power
dissipation may be calculated by use of VT(TO) and rT information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
After application of thermal compound, place the module
squarely over the mounting holes, (or ‘T’ slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
7/8
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
SALES OFFICES
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reservestherighttoalterwithoutpriornoticethespecification, designorpriceofanyproductorservice. Informationconcerningpossiblemethodsofuseisprovidedasaguideonlyanddoesnotconstituteanyguarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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