MP03XXX330-10 [DYNEX]
Phase Control Dual SCR, SCR/Diode Modules; 相位控制双可控硅SCR /二极管模块
| 型号： | MP03XXX330-10 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Phase Control Dual SCR, SCR/Diode Modules |
| 文件： | 总10页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP03 XXX 330 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4483-4.0
DS4483-5.0 January 2000
FEATURES
KEY PARAMETERS
VDRM
ITSM
IT(AV) (per arm)
Visol
1200V
10600A
334A
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
2500V
CIRCUIT OPTIONS
Code
Circuit
HBT
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
HBP
HBN
■ AC Phase Control
VOLTAGE RATINGS
PACKAGE OUTLINE
Type
Number
Repetitive
Peak
Conditions
Voltages
VDRM VRRM
T(vj) = 130oC
IDRM = IRRM = 30mA
VDSM & VRSM
MP03/330 - 12
MP03/330 - 10
MP03/330 - 08
1200
1000
800
=
VDRM & VRRM+ 100V
respectively
Lower voltage grades available.
For full description of part number see "Ordering instructions"
on page 3.
Module type code: MP03.
See Package Details for further information
CURRENT RATINGS - PER ARM
Symbol
Parameter
Conditions
Max.
334
289
259
Units
A
Tcase = 75oC
Tcase = 85oC
A
Mean on-state current
RMS value
Halfwave, resistive load
Tcase = 75oC
IT(AV)
Theatsink = 75oC
A
Theatsink = 85oC
A
A
223
525
IT(RMS)
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MP03 XXX 330 Series
SURGE RATINGS - PER ARM
Symbol
Parameter
Conditions
VR = 0
Max.
10.6
8.5
Units
A
10ms half sine;
Tj = 130˚C
ITSM
Surge (non-repetitive) on-state current
I2t for fusing
VR = 50% VRRM
VR = 0
kA
0.56 x 106 A2s
10ms half sine;
Tj = 130˚C
I2t
VR = 50% VRRM
A2s
0.36 x 106
THERMAL & MECHANICAL RATINGS
Symbol
Parameter
Conditions
Max.
0.11
0.12
0.13
Units
oC/W
oC/W
oC/W
dc
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
3 phase
Rth(j-c)
Mounting torque = 5Nm
with mounting compound
Thermal resistance - case to heatsink
per thyristor or diode
Rth(c-hs)
0.05
130
oC/W
oC
Tvj
Virtual junction temperature
Storage temperature range
Off-state (Blocking)
-40 to 130 oC
Tstg
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Visol
Isolation voltage
2.5
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
VTM
Parameter
Conditions
At 1000A, Tcase = 25oC
At VRRM/VDRM, Tj = 130oC
To 67% VDRM Tj = 130oC
Max.
1.50
30
Units
V
On-state voltage
mA
V/µs
IRRM/IDRM
dV/dt
Peak reverse and off-state current
Linear rate of rise of off-state voltage
200*
From 67% VDRM to 600A
Gate source 10V, 5Ω
dI/dt
Rate of rise of on-state current
100
A/µs
Rise time 0.5µs, Tj =130oC
VT(TO)
rT
Threshold voltage
At Tvj = 130oC
At Tvj = 130oC
0.8
0.7
V
mΩ
On-state slope resistance
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03 XXX 330 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Conditions
Typ.
Max.
3.0
150
0.25
30
Units
V
VDRM = 5V, Tcase = 25oC
-
-
-
-
-
-
-
-
-
Gate trigger voltage
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
mA
V
VGD
At VDRM Tcase = 25oC
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
V
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
0.25
5.0
10
V
V
Anode positive with respect to cathode
A
PGM
tp = 25µs
100
5
W
W
PG(AV)
Mean gate power
ORDERING INSTRUCTIONS
Part number is made up of as follows:
Examples:
MP03 HBP330 - 08
MP03 HBN330 - 12
MP03 HBT330 - 08
MP03 HBT 330 -10
MP = Pressure contact module
03
= Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
330 = Nominal average current rating at Tcase = 75oC
10
= VRRM/100
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
■ Adequate heatsinking is required to maintain the base ■ An even coating of thermal compound (eg. Unial) should be
temperature at 75oC if full rated current is to be achieved. Power applied to both the heatsink and module mounting surfaces. This
dissipation may be calculated by use of VT(TO) and rT information in should ideally be 0.05mm (0.002") per surface to ensure optimum
accordance with standard formulae. We can provide assistance thermal performance.
with calculations or choice of heatsink if required.
■Afterapplicationofthermalcompound,placethemodulesquarely
■ The heatsink surface must be smooth and flat; a surface finish over the mounting holes, (or 'T' slots) in the heatsink. Using a
of N6 (32µin) and a flatness within 0.05mm (0.002") are torque wrench, slowly tighten the recommended fixing bolts at
recommended.
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
■ Immediately prior to mounting, the heatsink surface should be reached at both ends.
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up ■ It is not acceptable to fully tighten one fixing bolt before starting
and foreign material. Care should be taken to ensure no foreign to tighten the others. Such action may DAMAGE the module.
particles remain.
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MP03 XXX 330 Series
CURVES
1600
1200
800
400
0
Measured under pulse conditions
Tj = 130˚C
0.6 0.8 1.0
1.2 1.4 1.6 1.8
Instantaneous on-state voltage - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
100
100W
Table gives pulse power PGM in Watts
75W
Pulse Width Frequency Hz
50W
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
µs
20
25
100
500
1ms
10ms
VFGM
10
100 50
10
-
-
-
Tj = -40˚C
Tj = 25˚C
Tj = 125˚C
Region of
certain triggering
1
0.1
0.001
0.01
IGD
0.1
Gate trigger current - (A)
0.1
10
IFGM
Fig. 2 Gate trigger characteristics
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MP03 XXX 330 Series
0.15
0.10
0.05
0
d.c.
0.001
0.01
0.1
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
20
15
10
5
I2t = Î2 x t
2
500
450
400
350
300
250
200
150
I2t
0
1
10
1
2
3 45
50
ms
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 130˚C (Thyristor or diode)
5/10
MP03 XXX 330 Series
500
450
400
350
300
250
200
150
100
50
180˚
120˚
90˚
60˚
30˚
0
0
50
100
150
200
250
300
350
400
Mean on-state current - (A)
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
500
180˚
450
400
350
300
250
200
150
100
50
120˚
d.c.
90˚
60˚
30˚
0
0
50
100
150
200
250
300
350
400
Mean on-state current - (A)
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
6/10
MP03 XXX 330 Series
140
120
100
80
60
40
20
180˚
30˚
60˚
90˚
120˚
300
0
0
50
100
150
200
250
350
400
Mean on-state current - (A)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
d.c.
80
60
40
20
180˚
350
30˚
150
60˚
90˚
120˚
300
0
0
50
100
200
250
400
Mean on-state current - (A)
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 330 Series
1400
R - Load
L - Load
0.04 0.02 Rth(hs-a) ˚C/W
1200
1000
800
600
400
200
0
0.08
0.10
0.12
0.15
0.20
0.30
0.40
20
0
40
60
80 100 120 140
0
200
D.C. output current - (A)
600
400
Maximum ambient temperature - (˚C)
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1400
1200
R & L- Load
0.08
0.04 0.02 Rth(hs-a) ˚C/W
1000
800
600
400
200
0
0.10
0.12
0.15
0.20
0.30
0.40
20
0
40
60
80 100 120 140
0
200
D.C. output current - (A)
600
400
Maximum ambient temperature - (˚C)
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 330 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
K2
G2
G1
K1
80
2.8x0.8
2
3
3x M8
1
92
Recommended fixings for mounting:
Recommended mounting torque:
M5 socket head cap screws.
5Nm (44lb.ins)
Recommended torque for electrical connections: 8Nm (70lb.ins)
Maximum torque for electrical connections:
Nominal weight: 950g
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G K
1 1
K
G
2
2
1
1
1
2
3
HBT
G K
1 1
2
3
HBP
2
K
G
2
2
3
HBN
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MP03 XXX 330 Series
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
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Lincolnshire. LN6 3LF. United Kingdom.
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Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4483-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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