RD65FV05 [DYNEX]

Rectifier Diode Target Information; 整流二极管的目标信息
RD65FV05
型号: RD65FV05
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Rectifier Diode Target Information
整流二极管的目标信息

整流二极管
文件: 总7页 (文件大小:101K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RD65FV  
Rectifier Diode  
Target Information  
Replaces November 2000, version DS5408-1.1  
DS5408-2.0 October 2001  
FEATURES  
KEY PARAMETERS  
VRRM  
Optimised For High Current Rectifiers  
High Surge Capability  
600V  
IF(AV)  
IFSM  
(max)  
(max)  
11745A  
Very Low On-state Voltage  
162000A  
APPLICATIONS  
Electroplating  
Power Supplies  
Welding  
VOLTAGE RATINGS  
Part and Ordering Repetitive Peak  
Conditions  
Number  
Reverse Voltage  
VRRM  
V
RD65FV06  
VRSM = VRRM  
600  
500  
400  
300  
200  
100  
RD65FV05  
RD65FV04  
RD65FV03  
RD65FV02  
RD65FV01  
Outline type code: V  
(See Package Details for further information)  
Fig. 1 Package outline  
ORDERING INFORMATION  
When ordering, select the required part number shown in the  
Voltage Ratings selection table.  
For example:  
RD65FV04  
Note: Please use the complete part number when ordering and  
quote this number in any future correspondance relating to your  
order.  
1/7  
www.dynexsemi.com  
RD65FV  
CURRENT RATINGS  
Tcase = 75oC unless otherwise stated  
Symbol  
Parameter  
Conditions  
Max.  
Units  
Double Side Cooled  
IF(AV)  
IF(RMS)  
IF  
Mean forward current  
Half wave resistive load  
11745  
18450  
16974  
A
A
A
RMS value  
-
-
Continuous (direct) forward current  
Single Side Cooled (Anode side)  
IF(AV)  
IF(RMS)  
IF  
Mean forward current  
RMS value  
Half wave resistive load  
7632  
11988  
10079  
A
A
A
-
-
Continuous (direct) forward current  
T
case = 85oC unless otherwise stated  
Symbol  
Parameter  
Test Conditions  
Max.  
Units  
Double Side Cooled  
IF(AV)  
IF(RMS)  
IF  
Mean forward current  
Half wave resistive load  
11120  
17500  
16000  
A
A
A
RMS value  
-
-
Continuous (direct) forward current  
Single Side Cooled  
IF(AV)  
IF(RMS)  
IF  
Mean forward current  
Half wave resistive load  
7200  
11300  
9450  
A
A
A
RMS value  
-
-
Continuous (direct) forward current  
2/7  
www.dynexsemi.com  
RD65FV  
SURGE RATINGS  
Symbol  
Parameter  
Test Conditions  
10ms half sine, Tcase = 175˚C  
VR = 50% VRRM - 1/4 sine  
10ms half sine, Tcase = 175˚C  
VR = 0  
Max.  
Units  
kA  
IFSM  
I2t  
IFSM  
I2t  
Surge (non-repetitive) forward current  
I2t for fusing  
130  
84.5 x 106  
162  
A2s  
kA  
Surge (non-repetitive) forward current  
I2t for fusing  
132 x 106  
A2s  
THERMAL AND MECHANICAL RATINGS  
Min.  
Symbol  
Parameter  
Test Conditions  
Max. Units  
0.0075 ˚CW  
0.015 ˚CW  
0.015 ˚CW  
0.002 ˚CW  
0.004 ˚CW  
-
Rth(j-c)  
Thermal resistance - junction to case  
Double side cooled  
DC  
Single side cooled  
Anode DC  
Cathode DC  
Double side  
-
-
Rth(c-h)  
Thermal resistance - case to heatsink  
Virtual junction temperature  
Clamping force 43.0kN  
-
(with mounting compound) Single side  
Forward (conducting)  
-
-
Tvj  
225  
200  
200  
47.3  
˚C  
˚C  
˚C  
kN  
-
Reverse (blocking)  
–55  
38.7  
Tstg  
Fm  
Storage temperature range  
Clamping force  
CHARACTERISTICS  
Min.  
Symbol  
Parameter  
Test Conditions  
At VRRM, Tcase = 200˚C  
IF = 2000A, dIRR/dt = 3A/µs,  
Tcase = 200˚C, VR = 100V  
At Tvj = 200˚C  
Max. Units  
-
-
-
-
-
IRM  
Irr  
Peak reverse current  
150  
230  
39  
mA  
A
Peak reverse recovery current  
Total stored charge  
Threshold voltage  
QS  
VTO  
rT  
µC  
V
0.6  
Slope resistance  
At Tvj = 200˚C  
0.0225 mΩ  
3/7  
www.dynexsemi.com  
RD65FV  
CURVES  
16000  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
8000  
dc  
Tj = 200˚C  
1/2 wave  
3 phase  
6 phase  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
0
2000  
4000  
6000  
8000 10000 12000 14000  
0.5  
0.55  
0.6  
0.65  
0.7  
0.75  
0.8  
Instantaneous forward voltage, VF - (V)  
Mean forward current, IF(AV) - (A)  
Fig. 2 Maximum (limit) forward characteristics  
Fig. 3 Power dissipation  
1000  
Conditions:  
10000  
IF  
Tj = 200˚C  
VR = 100V  
IF = 2000A  
QS  
dI/dt  
Max. IRR  
IRM  
1000  
100  
Max. QS  
100  
0.1  
10  
100  
1.0  
10  
Rate of decay of forward current dI/dt - (A/µs)  
Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt  
4/7  
www.dynexsemi.com  
RD65FV  
0.1  
280  
240  
200  
160  
120  
80  
I2t = Î2 x t  
2
100  
80  
Anode side cooled  
Double side cooled  
0.01  
60  
40  
20  
0.001  
0.0001  
Effective thermal resistance  
Junction to case ˚C/W  
Conduction  
Double side Anode side  
0.0075  
0.0085  
0.0092  
0.0120  
0.015  
0.016  
0.0167  
0.0194  
d.c.  
Halfwave  
3 phase 120˚  
6 phase 60˚  
40  
0.001  
0.01  
0.1  
1.0  
10  
100  
1
10  
1
2 3 5 10 20 50  
Cycles at 50Hz  
Time - (s)  
ms  
Duration  
Fig. 5 Surge (non-repetitive) forward current vs time  
(with 50% VRRM @ Tcase = 175˚C)  
Fig. 6 Maximum (limit) transient thermal impedance  
5/7  
www.dynexsemi.com  
RD65FV  
PACKAGE DETAILS  
Forfurtherpackageinformation,please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm,unless  
stated otherwise. DO NOT SCALE.  
Holes Ø3.6 x 2.0 deep (In both electrodes)  
Cathode  
Ø112.5 max  
Ø73 nom  
Ø73 nom  
Anode  
Nominal weight: 1100g  
Clamping force: 43kN ±10%  
Package outine type code: V  
Note:  
1. Package maybe supplied with pins and/or tags.  
6/7  
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RD65FV  
POWER ASSEMBLY CAPABILITY  
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,  
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current  
capability of our semiconductors.  
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The  
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our  
customers.  
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution  
(PACs).  
DEVICE CLAMPS  
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded  
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of T22mm  
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.  
Please refer to our application note on device clamping, AN4839  
HEATSINKS  
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance  
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.  
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer  
Services.  
http://www.dynexsemi.com  
e-mail: power_solutions@dynexsemi.com  
HEADQUARTERS OPERATIONS  
DYNEX SEMICONDUCTOR LTD  
Doddington Road, Lincoln.  
Lincolnshire. LN6 3LF. United Kingdom.  
Tel: 00-44-(0)1522-500500  
CUSTOMER SERVICE CENTRES  
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33  
North America Tel: (613) 723-7035. Fax: (613) 723-1518.  
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020  
SALES OFFICES  
Fax: 00-44-(0)1522-500550  
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33  
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /  
Tel: (949) 733-3005. Fax: (949) 733-2986.  
DYNEX POWER INC.  
99 Bank Street, Suite 410,  
Ottawa, Ontario, Canada, K1P 6B9  
Tel: 613.723.7035  
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020  
Fax: 613.723.1518  
Toll Free: 1.888.33.DYNEX (39639)  
These offices are supported by Representatives and Distributors in many countries world-wide.  
© Dynex Semiconductor 2001 Publication No. DS5408-2 Issue No. 2.0 October 2001  
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM  
Datasheet Annotations:  
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-  
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.  
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.  
Advance Information: The product design is complete and final characterisation for volume production is well in hand.  
No Annotation: The product parameters are fixed and the product is available to datasheet specification.  
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as  
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves  
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such  
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication  
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury  
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.  
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.  
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