SV0524FKCR [DYNEX]

Rectifier Diode, 1 Phase, 1 Element, 145A, 2400V V(RRM), Silicon, DO-8C, 1 PIN;
SV0524FKCR
型号: SV0524FKCR
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Rectifier Diode, 1 Phase, 1 Element, 145A, 2400V V(RRM), Silicon, DO-8C, 1 PIN

快速恢复二极管
文件: 总7页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SV05..F  
Fast Recovery Diode  
Advance Information  
Replaces January 2000 version, DS4144-4.0  
DS4144-5.0 June 2004  
APPLICATIONS  
I Induction Heating  
I A.C. Motor Drives  
I Snubber Diode  
I Welding  
KEY PARAMETERS  
VRRM  
IF(AV)  
IFSM  
Qr  
2500V  
145A  
2500A  
150µC  
2.2µs  
trr  
I High Frequency Rectification  
I UPS  
FEATURES  
I Double Side Cooling  
I High Surge Capability  
I Low Recovery Charge  
VOLTAGE RATINGS  
Type Number  
Repetitive Peak  
Conditions  
Reverse Voltage  
VRRM  
V
SV05 25F M or K  
SV05 24F M or K  
SV05 22F M or K  
SV05 20F M or K  
VRSM = VRRM + 100V  
2500  
2400  
2200  
2000  
Outline type codes: DO8 and DO8C.  
See Package Details for further information.  
Fig. 1 Package outlines  
ORDERING INFORMATION  
When ordering, select the required part number shown in the  
Voltage Ratings selection table, e.g.:  
SV05 24FM for an M12 thread  
or  
SV05 24FK for a 1/2" 20 UNF thread  
For stud anode add 'R' to type number, e.g. SV05 25FMR.  
For outline DO8C add suffix 'C' to typ number,  
e.g. SV05 25FKC.  
Note: Please use the complete part number when ordering and  
quote this number in any future correspondance relating to your  
order.  
1/7  
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SV05..F  
CURRENT RATINGS  
Symbol  
Parameter  
Mean forward current  
RMS value  
Continuous (direct) forward current  
Conditions  
Half wave resistive load, Tcase = 65oC  
Tcase = 65oC  
Max.  
145  
Units  
IF(AV)  
A
A
225  
IF(RMS)  
IF  
Tcase = 65oC  
195  
A
SURGE RATINGS  
Conditions  
Symbol  
Parameter  
Max.  
2.5  
Units  
kA  
IFSM  
I2t  
Surge (non-repetitive) forward current  
I2t for fusing  
10ms half sine; with 0% VRRM, Tj = 150oC  
31 x 103  
2.0  
A2s  
kA  
IFSM  
I2t  
Surge (non-repetitive) forward current  
I2t for fusing  
10ms half sine; with 50% VRRM, Tj = 150oC  
20 x 103  
A2s  
THERMAL AND MECHANICAL DATA  
Conditions  
Min.  
Max. Units  
Symbol  
Rth(j-c)  
Parameter  
oC/W  
oC/W  
dc  
-
-
0.23  
0.02  
Thermal resistance - junction to case  
Thermal resistance - case to heatsink  
Mounting torque 15Nm  
with mounting compound  
Rth(c-h)  
Tvj  
Tstg  
-
On-state (conducting)  
-
150  
150  
16.5  
oC  
oC  
Virtual junction temperature  
Storage temperature range  
-55  
13.5  
Nm  
Mounting torque  
2/7  
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SV05..F  
CHARACTERISTICS  
Symbol  
Typ.  
Units  
V
Parameter  
Conditions  
At 600A peak, Tcase = 25oC  
At VRRM, Tcase = 150oC  
Max.  
2.8  
50  
VFM  
IRRM  
trr  
Forward voltage  
Peak reverse current  
-
-
mA  
Reverse recovery time  
2.2  
-
µs  
IF = 600A, diRR/dt = 80A/µs  
QRA1  
IRM  
Recovered charge (50% chord)  
Reverse recovery current  
-
-
150  
140  
µC  
Tcase = 150oC, VR = 100V  
A
VTO  
rT  
Threshold voltage  
At Tvj = 150oC  
-
-
-
1.4  
2.5  
V
mΩ  
V
Slope resistance  
At Tvj = 150oC  
VFRM  
Forward recovery voltage  
di/dt = 1000A/µs, Tj = 125oC  
250  
DEFINITION OF K FACTOR AND QRA1  
QRA1 = 0.5x IRR(t1 + t2)  
k = t1/t2  
dIR/dt  
t1  
t2  
τ
0.5x IRR  
IRR  
3/7  
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SV05..F  
CURVES  
1000  
500  
400  
300  
200  
100  
0
Measured under pulse conditions  
Measured under pulse  
conditions  
900  
800  
700  
600  
500  
Tj = 25˚C  
Tj = 150˚C  
Tj = 25˚C  
Tj = 150˚C  
1.0  
1.5  
2.0  
2.5  
3.0  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Instantaneous forward voltage VF - (V)  
Instantaneous forward voltage VF - (V)  
Fig.2 Maximum (limit) forward characteristics  
Fig.3 Maximum (limit) forward characteristics  
10000  
1000  
100  
1000  
50µs  
IF  
Conditions:  
Tj = 150 ˚C,  
VR = 100V  
Conditions:  
Tj = 150˚C,  
VR = 100V  
QS  
=
0
Q
S
tp = 1ms  
dIR/dt  
IF = 1000A  
IRR  
IF = 1000A  
IF = 500A  
100  
IF = 200A  
IF = 100A  
10  
1
10  
1
10  
100  
1000  
10  
100  
1000  
Rate of rise of reverse current dIR/dt - (A/µs)  
Rate of rise of reverse current dIR/dt - (A/µs)  
Fig.4 Recovered charge  
Fig.5 Typical reverse recovery current vs rate of rise of  
forward current  
4/7  
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SV05..F  
0.1  
d.c.  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
Time - (s)  
Fig.6 Maximum (limit) transient thermal impedance -  
junction to case - (˚C/W)  
5/7  
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SV05..F  
PACKAGE DETAILS - DO8 and DO8C  
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.  
DO NOT SCALE.  
Ø8.4 0.3  
8 min  
20 max  
Ø5.2 0.2  
12 0.5  
Ø27 max  
Ø27 max  
8 min  
8 min  
3.17 max  
Thread M12  
1/2" 20 UNF  
Thread M12  
1/2" 20 UNF  
3.17 max  
Nominal weight: 120g  
Mounting torque: 15Nm 10%  
Nominal weight: 120g  
Mounting torque: 15Nm 10%  
Package outline type code: DO8  
Package outline type code: DO8C  
6/7  
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POWER ASSEMBLY CAPABILITY  
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic  
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages  
and current capability of our semiconductors.  
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.  
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of  
our customers.  
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete  
Solution (PACs).  
HEATSINKS  
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to  
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow  
rates) is available on request.  
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or  
Customer Services.  
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all  
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always  
be followed.  
http://www.dynexsemi.com  
e-mail: power_solutions@dynexsemi.com  
HEADQUARTERS OPERATIONS  
DYNEX SEMICONDUCTOR LTD  
Doddington Road, Lincoln.  
Lincolnshire. LN6 3LF. United Kingdom.  
Tel: +44-(0)1522-500500  
CUSTOMER SERVICE  
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020  
SALES OFFICES  
Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97.  
France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97  
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.  
Fax: +44 (0)1522 500020  
Fax: +44-(0)1522-500550  
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.  
These offices are supported by Representatives and Distributors in many countries world-wide.  
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN  
UNITED KINGDOM  
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded  
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company  
reservestherighttoalterwithoutpriornoticethespecification, designorpriceofanyproductorservice. Informationconcerningpossiblemethodsofuseisprovidedasaguideonlyanddoesnotconstituteanyguarantee  
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure  
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury  
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.  
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.  
www.dynexsemi.com  

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