TF91512B [DYNEX]

Fast Switching Thyristor; 快速开关晶闸管
TF91512B
型号: TF91512B
厂家: Dynex Semiconductor    Dynex Semiconductor
描述:

Fast Switching Thyristor
快速开关晶闸管

栅极 触发装置 可控硅整流器 开关
文件: 总13页 (文件大小:239K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TF915..B  
Fast Switching Thyristor  
Replaces December 1998 version, DS4279-3.0  
DS4279-4.0 January 2000  
APPLICATIONS  
KEY PARAMETERS  
VDRM  
IT(RMS)  
ITSM  
dV/dt 300V/µs  
dI/dt  
1400V  
1700A  
20000A  
High Power Inverters And Choppers  
UPS  
Railway Traction  
Induction Heating  
AC Motor Drives  
Cycloconverters  
500A/µs  
tq  
40µs  
FEATURES  
Double Side Cooling  
High Surge Capability  
High Voltage  
VOLTAGE RATINGS  
Type Number  
Repetitive  
Peak  
Conditions  
Voltages  
VDRM VRRM  
TF915 14B  
1400  
1200  
1000  
800  
VRSM = VRRM + 100V  
IDRM = IRRM = 60mA  
at VRRM or VDRM & Tvj  
TF915 12B  
TF915 10B  
TF915 08B  
TF915 06B  
600  
Lower voltage grades available.  
Outline type code: MU169.  
See Package Details for further information.  
CURRENT RATINGS  
Symbol  
IT(AV)  
Parameter  
Conditions  
Max.  
Units  
Half sinewave, 50Hz, Tcase = 80oC  
1080  
A
Mean on-state current  
RMS value  
IT(RMS)  
Half sinewave, 50Hz, Tcase = 80oC  
1700  
A
1/13  
TF915..B  
SURGE RATINGS  
Symbol  
Parameter  
Conditions  
Max.  
20.0  
Units  
kA  
ITSM  
I2t  
Surge (non-repetitive) on-state current  
I2t for fusing  
10ms half sine; VR = 0% VRRM, Tj = 125˚C  
10ms half sine; VR = 0% VRRM, Tj = 125˚C  
2000 x 103  
A2s  
THERMAL AND MECHANICAL DATA  
Conditions  
Min.  
Max. Units  
Parameter  
Symbol  
0.020 oC/W  
dc  
-
-
Double side cooled  
Rth(j-c)  
Anode dc  
-
-
oC/W  
oC/W  
Thermal resistance - junction to case  
Single side cooled  
Cathode dc  
-
-
0.006 oC/W  
Double side  
Clamping force 23.5kN  
Thermal resistance - case to heatsink  
Virtual junction temperature  
Rth(c-h)  
with mounting compound  
Single side  
-
-
0.012  
125  
oC/W  
oC  
On-state (conducting)  
Reverse (blocking)  
Tvj  
-
125  
oC  
Tstg  
-
Storage temperature range  
Clamping force  
-40  
150  
oC  
22.3  
24.6  
kN  
MEASUREMENT OF RECOVERED CHARGE - QRA1  
Measurement of QRA1 : QRA1 = IRR x tRR  
2
ITM  
QRA1  
tp = 1ms  
0.5x IRR  
dIR/dt  
IRR  
2/13  
TF915..B  
DYNAMIC CHARACTERISTICS  
Symbol  
VTM  
Parameter  
Maximum on-state voltage  
Conditions  
At 2000A peak, Tcase = 25oC  
At VRRM/VDRM, Tcase = 125oC  
Min.  
Max. Units  
-
1.75  
60  
V
IRRM/IDRM  
dV/dt  
Peak reverse and off-state current  
-
mA  
V/µs  
A/µs  
A/µs  
V
Maximum linear rate of rise of off-state voltage Linear to 60% VDRM T = 125oC, Gate open circuit  
-
300  
500  
800  
1.25  
0.25  
-
j
Repetitive 50Hz  
-
Gate source 20V, 20Ω  
dI/dt  
Rate of rise of on-state current  
-
tr 0.5µs, Tj = 125˚C  
At Tvj = 125oC  
Non-repetitive  
VT(TO)  
rT  
Threshold voltage  
On-state slope resistance  
Delay time  
-
-
At Tvj = 125oC  
mΩ  
µs  
Tj = 25˚C, IT = 50A,  
tgd  
1.5*  
VD = 300V, IG = 1A,  
dI/dt = 50A/µs, dIG/dt = 1A/µs  
t(ON)TOT  
Total turn-on time  
Holding current  
Latching current  
3.0*  
100*  
300*  
-
-
-
µs  
mA  
mA  
µs  
IH  
IL  
Tj = 25oC, ITM = 1A, VD = 12V  
Tj = 25oC, IG = 0.5A, VD = 12V  
-
Tj = 125˚C, IT = 250A, VR = 50V,  
dV/dt = 20V/µs (Linear to 60% VDRM),  
dIR/dt = 50A/µs, Gate open circuit  
tq code: B  
40  
tq  
Turn-off time  
*Typical value.  
GATE TRIGGER CHARACTERISTICS AND RATINGS  
Symbol  
VGT  
Parameter  
Gate trigger voltage  
Conditions  
Typ.  
Max. Units  
VDRM = 12V, Tcase = 25oC, RL = 6Ω  
VDRM = 12V, Tcase = 25oC, RL = 6Ω  
At VDRM Tcase = 125oC, RL = 1kΩ  
-
-
3.0  
V
200  
mA  
IGT  
Gate trigger current  
VGD  
Gate non-trigger voltage  
Peak reverse gate voltage  
Peak forward gate current  
Peak gate power  
-
-
-
-
-
0.2  
5.0  
10  
50  
3
V
V
VRGM  
IFGM  
Anode positive with respect to cathode  
A
PGM  
W
W
PG(AV)  
Mean gate power  
3/13  
TF915..B  
CURVES  
4/13  
TF915..B  
5/13  
TF915..B  
NOTES:  
1. VD 600V.  
2. VR 10V.  
3. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. VD 600V.  
2. VR 10V.  
3. R.C Snubber, C = 0.22µF, R = 4.7Ω  
6/13  
TF915..B  
NOTES:  
1. VD 600V.  
2. VR 10V.  
3. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. dI/dt = 25A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
7/13  
TF915..B  
NOTES:  
1. dI/dt = 25A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. dI/dt = 25A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
8/13  
TF915..B  
NOTES:  
1. dI/dt = 50A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. dI/dt = 50A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
9/13  
TF915..B  
NOTES:  
1. dI/dt = 50A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. dI/dt = 100A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
10/13  
TF915..B  
NOTES:  
1. dI/dt = 100A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
NOTES:  
1. dI/dt = 100A/µs  
2. VD 600V.  
3. VR 10V.  
4. R.C Snubber, C = 0.22µF, R = 4.7Ω  
11/13  
TF915..B  
PACKAGE DETAILS  
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.  
DO NOT SCALE.  
2 holes Ø3.6 x 2.1 approx (one in each electrode)  
Cathode tab  
Ø74 max  
Ø46 min  
Cathode  
Ø1.5  
Gate  
Ø46 min  
Ø68 max  
Anode  
Nominal weight: 500g  
Clamping force: 23.5kN ±10%  
Lead length: 250mm  
Package outine type code: MU169  
ASSOCIATED PUBLICATIONS  
Title  
Application Note  
Number  
AN4506  
Calculating the junction temperature or power semiconductors  
Gate triggering and the use of gate characteristics  
Recommendations for clamping power semiconductors  
The effect of temperature on thyristor performance  
Thyristor and diode measurement with a multi-meter  
Turn-on performance of thyristors in parallel  
AN4840  
AN4839  
AN4870  
AN4853  
AN4999  
Use of VTO, rT on-state characteristic  
AN5001  
12/13  
TF915..B  
POWER ASSEMBLY CAPABILITY  
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-  
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and  
current capability of our semiconductors.  
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The  
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of  
our customers.  
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete  
solution (PACs).  
DEVICE CLAMPS  
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-  
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm  
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.  
Please refer to our application note on device clamping, AN4839  
HEATSINKS  
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the  
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on  
request.  
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the  
factory.  
http://www.dynexsemi.com  
e-mail: power_solutions@dynexsemi.com  
HEADQUARTERS OPERATIONS  
CUSTOMER SERVICE CENTRES  
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50  
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444  
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020  
DYNEX SEMICONDUCTOR LTD  
Doddington Road, Lincoln.  
Lincolnshire. LN6 3LF. United Kingdom.  
Tel: 00-44-(0)1522-500500  
SALES OFFICES  
Fax: 00-44-(0)1522-500550  
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50  
Germany Tel: 07351 827723  
DYNEX POWER INC.  
Unit 7 - 58 Antares Drive,  
Nepean, Ontario, Canada K2E 7W6.  
Tel: 613.723.7035  
Fax: 613.723.1518  
Toll Free: 1.888.33.DYNEX (39639)  
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /  
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.  
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020  
These offices are supported by Representatives and Distributors in many countries world-wide.  
© Dynex Semiconductor 2000 Publication No. DSxxxx-y Issue No. x.x January 2000  
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM  
Datasheet Annotations:  
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-  
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.  
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.  
Advance Information: The product design is complete and final characterisation for volume production is well in hand.  
No Annotation: The product parameters are fixed and the product is available to datasheet specification.  
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as  
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves  
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such  
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication  
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury  
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.  
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.  
13/13  

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