TF94434H [DYNEX]
Fast Switching Thyristor; 快速开关晶闸管型号: | TF94434H |
厂家: | Dynex Semiconductor |
描述: | Fast Switching Thyristor |
文件: | 总7页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TF944..H
Fast Switching Thyristor
Replaces March 1998 version, DS4281-3.2
DS4281-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
VDRM
IT(RMS)
ITSM
dV/dt 500V/µs
dI/dt
3500V
1350A
13000A
■ High Power Inverters And Choppers
■ UPS
■ Railway Traction
■ Induction Heating
■ AC Motor Drives
■ Cycloconverters
500A/µs
tq
120µs
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ High Voltage
VOLTAGE RATINGS
Type Number
Repetitive
Peak
Conditions
Voltages
VDRM VRRM
TF944 35H
3500
3400
3200
3000
VRSM = VRRM + 100V
IDRM = IRRM = 100mA
at VRRM or VDRM & Tvj
TF944 34H
TF944 32H
TF944 30H
Lower voaltage grades available.
Outline type code: MU169
See Package Details for further information.
CURRENT RATINGS
Symbol
IT(AV)
Parameter
Conditions
Max.
Units
Half sinewave, 50Hz, Tcase = 80oC
850
A
Mean on-state current
RMS value
IT(RMS)
Half sinewave, 50Hz, Tcase = 80oC
1350
A
1/7
TF944..H
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
13.0
Units
kA
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine; VR = 0% VRRM, Tj = 125˚C
10ms half sine; VR = 0% VRRM, Tj = 125˚C
845 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Parameter
Symbol
-
-
0.02
oC/W
oC/W
oC/W
dc
Double side cooled
Rth(j-c)
Anode dc
-
-
Thermal resistance - junction to case
Single side cooled
Cathode dc
-
-
0.006 oC/W
Double side
Clamping force 23.5kN
Thermal resistance - case to heatsink
Virtual junction temperature
Rth(c-h)
with mounting compound
Single side
-
-
0.012
135
oC/W
oC
On-state (conducting)
Reverse (blocking)
Tvj
-
125
oC
Tstg
-
Storage temperature range
Clamping force
-40
150
oC
22.3
24.6
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
QRA1
tp = 1ms
0.5x IRR
dIR/dt
IRR
2/7
TF944..H
DYNAMIC CHARACTERISTICS
Symbol
VTM
Parameter
Maximum on-state voltage
Conditions
At 1500A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
Min.
Max. Units
-
-
-
-
-
-
-
-
2.4
100
500
500
800
1.35
0.5
V
IRRM/IDRM
dV/dt
Peak reverse and off-state current
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage Linear to 60% VDRM T = 125oC, Gate open circuit
j
Repetitive 50Hz
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
tr ≤ 0.5µs, Tj = 125˚C
At Tvj = 125oC
Non-repetitive
VT(TO)
rT
Threshold voltage
On-state slope resistance
Delay time
At Tvj = 125oC
mΩ
µs
Tj = 25˚C, IT = 50A,
tgd
-*
VD = 300V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
t(ON)TOT
Total turn-on time
Holding current
-
100*
300*
-
-*
µs
mA
mA
µs
IH
IH
tq
Tj = 25oC, ITM = 1A, VD = 12V
Tj = 25oC, IG = 0.5A, VD = 12V
-
Holding current
-
120
-
Tj = 125˚C, IT = 500A, VR = 100V,
dV/dt = 20V/µs to 66% VDRM
dIR/dt = 50A/µs.
tq code: H
Turn-off time
,
-
µC
QRR
Reverse recovery charge
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
Typ.
Max.
Units
VDRM = 12V, Tcase = 25oC, RL = 6Ω
3.0
-
V
-
IGT
250
mA
Gate trigger current
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 1kΩ
VGD
-
-
0.25
30
V
V
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
VFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
VFGN
VRGM
-
-
0.25
5.0
V
V
IFGM
PGM
Peak forward gate current
Peak gate power
Anode positive with respect to cathode
-
-
10
50
A
W
PG(AV)
Mean gate power
-
3.0
W
3/7
TF944..H
CURVES
5000
4000
3000
2000
1000
0
Measured under pulse conditions
Tj = 125˚C
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, VT - (V)
Fig.1 Maximum (limit) on-state characteristics
1000
100
10
Conditions:
Tj = 125˚C
tp = 700µs
VR = 100V
IT = 3000A
IT = 800A
IT = 400A
IT = 100A
1
10
100
1000
Rate of rise of on-state current, dI/dt - (A/µs)
Fig.2 Reverse current vs rate of rise of on-state current
4/7
TF944..H
100000
10000
1000
Conditions:
Measurement conditions of QRA1
ITM
T = 125˚C
j
t = 700µs
p
V = 100V
QRA1
R
tp = 1ms
0.5IRR
dIR/dt
IRR
I = 3000A
T
I = 800A
T
I = 400A
T
I = 100A
T
100
1
10
100
1000
Rate of rise of on-state current, dI/dt - (A/µs)
Fig.3 Recovered charge vs rate of rise of on-state current
5/7
TF944..H
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.1 approx (one in each electrode)
Cathode tab
Ø74 max
Ø46 min
Cathode
Ø1.5
Gate
Ø46 min
Ø68 max
Anode
Nominal weight: 500g
Clamping force: 23.5kN ±10%
Lead length: 250mm
Package outine type code: MU169
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
AN4506
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
AN4840
AN4839
AN4870
AN4853
AN4999
Use of VTO, rT on-state characteristic
AN5001
6/7
TF944..H
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4281-4 Issue No.4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
7/7
相关型号:
TF94435H
Fast Switching ThyristorWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
DYNEX
TFA-300B
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-300T
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-300TF
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-37DC
SURFACE MOUNT RF POWER ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-37DD
SURFACE MOUNT RF POWER ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-50T
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-50TF
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-50TS
THROUGH-HOLE ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-54DC
SURFACE MOUNT RF POWER ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-54DD
SURFACE MOUNT RF POWER ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
TFA-55DC
SURFACE MOUNT RF POWER ATTENUATORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
©2020 ICPDF网 联系我们和版权申明