TV1824F [DYNEX]
Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-9, DO-9, 2 PIN;
| 型号： | TV1824F |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-9, DO-9, 2 PIN |
| 文件： | 总7页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TV18..F
Fast Recovery Diode
Replaces March 1998 version, DS4211-2.2
DS4211-3.0 January 2000
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Snubber Diode
■ Welding
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
2500V
200A
3500A
240µC
2.0µs
trr
■ High Frequency Rectification
■ UPS
FEATURES
■ Thermal Fatigue Free Pressure Contact
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Conditions
Reverse Voltage
VRRM
V
TV18 25F M or K
TV18 24F M or K
TV18 22F M or K
TV18 20F M or K
VRSM = VRRM + 100V
2500
2400
2200
2000
For 3/4" 16 UNF thread, add suffix K, e.g. TV18 25FK.
For M16 thread, add suffix M, e.g. TV18 25FM.
Outline type codes: DO9.
See Package Details for further information.
For stud anode add 'R' to type number, e.g. TV18 25FMR.
CURRENT RATINGS
Symbol
IF(AV)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
Max.
200
Units
A
A
320
IF(RMS)
1/8
TV18..F
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
3.5
Units
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 0% VRRM, Tj = 150oC
61 x 103
2.8
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 50% VRRM, Tj = 150oC
39.2x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Symbol
Rth(j-c)
Parameter
oC/W
oC/W
dc
-
-
0.16
0.06
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Mounting torque 35.0Nm
with mounting compound
Rth(c-h)
Tvj
Tstg
-
On-state (conducting)
-
150
175
35.0
oC
oC
Virtual junction temperature
Storage temperature range
-55
30.0
Nm
Mounting torque
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
At 1000A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
Max.
3.1
VFM
IRRM
trr
Forward voltage
Peak reverse current
-
-
-
V
50
mA
Reverse recovery time
3.2
µs
QRA1
IRM
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
240
160
-
µC
A
Tcase = 150oC, VR = 100V
K
1.3
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
-
1.64
1.54
120
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
2/8
TV18..F
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
k = t1/t2
dIR/dt
t1
t2
τ
0.5x IRR
IRR
CURVES
2000
Measured under pulse
conditions
1750
1500
1250
1000
750
Tj = 150˚C
Tj = 25˚C
500
1.0
2.0
3.0
4.0
5.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/8
TV18..F
500
400
300
200
100
0
Measured under
pulse conditions
Tj = 150˚C
Tj = 25˚C
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
250
200
150
100
50
Current
waveform
VFR
Voltage
waveform
di = δy
dt δx
δy
δx
Tj = 100˚C limit
Tj = 25˚C limit
0
0
500
1000
1500
2000
Rate of rise of forward current dIF/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
4/8
TV18..F
10000
1000
100
50µs
Conditions:
Tj = 150˚C,
VR = 100V
IF
Q =
∫
S
0
Q
S
tp = 1ms
dIR/dt
IRR
IF = 1000A
IF = 750A
IF = 500A
IF = 200A
IF = 100A
10
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.4 Recovered charge
10000
100
10
Conditions:
Tj = 150˚C,
IF = 1000A
IF = 750A
IF = 500A
VR = 100V
IF = 200A
IF = 100A
1
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
5/8
TV18..F
0.100
0.010
0.001
d.c.
0.1
1
10
100
0.01
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
TV18..F
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø4
20 ± 2
Hex. 32AF
7/8
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