EC739435M1R [E-CMOS]
-30V,-5.3A P-Channel MOSFET;
| 型号： | EC739435M1R |
| 厂家： | 
E-CMOS Corporation |
| 描述： | -30V,-5.3A P-Channel MOSFET |
| 文件： | 总8页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC739435
-30V、-5.3A P-Channel MOSFET
Description
The EC739435 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for
power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Features and Benefits:
◆ VDS = -30V,ID = -5.3A
RDS(ON) < 85mꢀ @ VGS=-4.5V
RDS(ON) < 53mꢀ @ VGS=-10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
◆
Battery protection
◆ Load switch
◆ Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
V
±20
A
-5.3
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
A
-20
Maximum Power Dissipation
PD
W
℃
2.5
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Thermal Resistance
℃/W
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
50
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
-30
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVDSS
V
GS=0V I
D
=-250ꢁA
V
IDSS
V
DS=-24V,VGS=0V
-1
ꢁA
nA
IGSS
V
GS=±20V,VDS=0V
±100
VGS(th)
V
DS=VGS,I
D
=-250ꢁA
GS=-10V, I =-5.3A
GS=-4.5V, I
DS=-15V,I
-1
4
-3
53
85
V
mꢀ
S
V
D
46
70
10
Drain-Source On-State Resistance RDS(ON)
V
D
=-4.2A
Forward Transconductance
gFS
V
D
=-4.5A
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C
lss
oss
rss
1040
420
PF
PF
PF
V
DS=-15V,VGS=0V,
Output Capacitance
C
F=1.0MHz
Reverse Transfer Capacitance
C
150
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
19
9
26
13
nS
nS
nS
nS
nC
nC
nC
V
DD=-15V,I
D
=-1A
VGS=-10V,RGEN=6ꢀ
td(off)
tf
74
36
12
2
105
50
Qg
VDS=-15V,I
D
=-5.3A,
Qgs
Qgd
VGS=-10V
3
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
V
GS=0V,I
S
=-1.7A
-1.2
-1.9
V
A
I
S
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300ꢁs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
Typical Electrical and Thermal Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
Ordering and Marking Information
EC739435 XX X
R：Tape & Reel
M1＝SOP-8L
Part No
EC739435M1R
Package
SOP-8L
Marking
739435
LLLLL
Information
LLLLL: Lot No
YY: Year Code
YYWW
WW: Week Code
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
SOP-8L Package Outline Dimension
E-CMOS Corp. (www.ecmos.com.tw)
Page 7 of 7
5D10N Rev.F003
EC739435
-30V、-5.3A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 8 of 7
5D10N Rev.F003
相关型号：
©2020 ICPDF网 联系我们和版权申明