EC747N65 [E-CMOS]
650V,7A N-Channel Power MOSFET;
| 型号： | EC747N65 |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 650V,7A N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC747N65
650V,7A N-Channel Power MOSFET
Features
◆ 650V, 7A, RDS(ON)(Max.) = 1.2Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Adapter
LCD Panel Power
Switching Mode Power Supply
E-Bike Charger
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Limit
Symbol
Parameter
Unit
TO-220
TO-263
TO-220F
Drain-Source Voltage a
650
±30
7
V
V
V
V
DS
GS
Gate-Source Voltage
Drain Current-Continuous, TC =25℃
Drain Current-Continuous, TC =100℃
Drain Current-Pulsed b
A
I
D
4.2
28
A
A
I
DM
Maximum Power Dissipation ＠ TJ=25℃
Single Pulsed Avalanche Energy c
Operating and Store Temperature Range
125
40
W
mJ
℃
P
D
195
E
AS
-55 to 150
T ,TSTG
J
Thermal Characteristics
Symbol
Parameter
Value
Unit
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
1
3.1
℃/W
R
R
JC
℃/W
63
JA
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4J06N-Rev.F001
EC747N65
650V,7A N-Channel Power MOSFET
Electrical Characteristics( TJ = 25°C unless otherwise noted)
■ Off Characteristics
Typ.
Symbol
Test Condition
Parameter
Min.
Max. Unit
-
-
650
Drain-Source Breakdown Voltage
V
VGS = 0V, ID = 250μA
BVDSS
-
-
-
-
IDSS
Zero Gate Voltage Drain Current
20 μ A
VDS = 650V, VGS = 0V
VDS = 0V, VGS = 30V
VDS = 0V, VGS = -30V
Forward Gate Body Leakage
Current
-
-
100
IGSSF
IGSSR
nA
nA
Reverse Gate Body Leakage
Current
-100
■ On Characteristics
V
Gate Threshold Voltage
2.91
0.93
VDS = VGS, ID = 250μA 2.0
4.0
1.2
VGS(th)
RDS(on)
-
Ω
Static Drain-Source On-Resistance
VGS = 10V, ID = 3.5A
■ Dynamic Characteristics
-
-
-
-
pF
pF
pF
Input Capacitance
1272
173
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
-
Output Capacitance
f = 1.0MHz
-
Reverse Transfer Capacitance
27.1
■ Switching Characteristics
-
-
ns
td(on)
-
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
28.7
8.4
VDD = 325V, ID = 7A
ns
ns
-
tr
RG = 10Ω,
VGS = 10V
-
-
td(off)
- 49.3
ns
nC
nC
-
tf
134
- 32.5
9.6
- 13.7
Qg
VDS = 325V, ID = 7A
VGS = 10V
Qgs
Qgd
-
nC
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4J06N-Rev.F001
EC747N65
650V,7A N-Channel Power MOSFET
■ Drain-Source Diode Characteristics
Drain-Source Diode Forward
Continuous Current
-
-
-
7.0
A
VGS = 0V
IS
-
-
Miximum Pulsed Current
28
A
V
ISM
VGS = 0V
Drain-Source Diode
Forward Voltage
-
1.5
VGS = 0V, IS =3.5A
VSD
Notes :
a. TJ = +25 C to +150 C.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. L=10mH, VDD =50V, IAS =9A, RG =25Ω Starting TJ =25 ℃.
d. Pulse width≦ 300 μs; duty cycle≦ 2%.
ORDERING INFORMATION
Part Number
Package
Marking
Marking Information
EC747N65AFR
TO-220F-3L
1. LLLLL：Lot No.
2. YY：Year code
747N65
LLLLL
EC747N65AR
EC747N65A9R
TO-220-3L
TO-263-3L
YYWW
3. WW：Week code
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
4J06N-Rev.F001
EC747N65
650V,7A N-Channel Power MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
4J06N-Rev.F001
EC747N65
650V,7A N-Channel Power MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
4J06N-Rev.F001
EC747N65
650V,7A N-Channel Power MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
4J06N-Rev.F001
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