EC76P4KE15A [E-CMOS]
Peak Pulse 400W Stand-off Voltage 6.8 to 550V;
| 型号： | EC76P4KE15A |
| 厂家： | 
E-CMOS Corporation |
| 描述： | Peak Pulse 400W Stand-off Voltage 6.8 to 550V |
| 文件： | 总6页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
Features
■ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
EC76P4KE6.8 thru 550
■ Class passivated junction
■ 400W peak pulse power capability on 10/1000us
Waveform, repetition rate (duty cycle): 0.01%
■ Excellent clamping capability
■ Low incremental surge resistance
■ Very fast response soldering guaranteed: 265℃/10
Seconds, 0.375”(9.5mm) lead length, 5lbs. (2.3kg)
tension
Mechanical Date
■ Case : JEDEC DO-204AL(DO-41) molded plastic
Body over passivated junction
■ Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
■ Polarity: For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
■ Mounting Position: Any
■ Weight : 0.012oz, 0.3g
Absolute Maximum Ratings
(Ratings at 25℃ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
400
Unit
W
Peak pulse power dissipation with a 10/1000 us waveform(1,2) (see Fig. 1)
Peak pulse current with a 10/1000 us waveform(1)
Steady state power dissipation
PPPM
IPPM
See Next Table
A
PM(AV)
1.0
W
at TL
=75℃, lead lengths 0.375" (9.5mm)(2)
Peak forward surge current 8.3ms single half sine-wave uni-directional only(3)
Maximum instantaneous forward voltage @ 25A for unidirectional only(4)
I
FSM
40
3.5/5.0
100
A
V
VF
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
,
LLead =10mm
R
θJA
θJL
,TSTG
A=25℃ per Fig. 2.
℃
/W
/W
R
60
℃
Operating junction and storage temperature range
T
J
-55 to +175
℃
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above T
2. Mounted on 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum
4. VF=3.5 V for devices of V(BR) < 220V, and VF=5.0 Volt max. for devices of V(BR)>220V
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
Electrical Characteristics
Breakdown
Maximum Maximum Maximum
Maximum
voltage
Test
current
at
Stand-off
voltage
V (BR) (Volts)(1)
reverse
leakage
at VWM
peak
pulse
clamping
temperature
coefficient
of VBR
Device type
voltage
V
WM
current
at IPPM
I
T
(mA)
(Volts)
I
D
(3) (uA)
I
PPM(2) (A)
VC (Volts)
(% /℃)
Min.
Max.
EC76P4KE6.8
EC76P4KE6.8A
EC76P4KE7.5
EC76P4KE7.5A
EC76P4KE8.2
EC76P4KE8.2A
EC76P4KE9.1
EC76P4KE9.1A
EC76P4KE10
EC76P4KE10A
EC76P4KE11
EC76P4KE11A
EC76P4KE12
EC76P4KE12A
EC76P4KE13
EC76P4KE13A
EC76P4KE15
EC76P4KE15A
EC76P4KE16
EC76P4KE16A
EC76P4KE18
EC76P4KE18A
EC76P4KE20
EC76P4KE20A
EC76P4KE22
EC76P4KE22A
EC76P4KE24
EC76P4KE24A
EC76P4KE27
EC76P4KE27A
EC76P4KE30
EC76P4KE30A
EC76P4KE33
EC76P4KE33A
EC76P4KE36
EC76P4KE36A
EC76P4KE39
EC76P4KE39A
EC76P4KE43
EC76P4KE43A
EC76P4KE47
EC76P4KE47A
6.12
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
1000
1000
500
500
200
200
50
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
0.057
0.057
0.062
0.061
0.065
0.065
0.068
0.068
0.073
0,073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
5.9
6.2
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
Breakdown
voltage
Maximum Maximum Maximum
Maximum
temperature
coefficient
of VBR
Test
current
at
Stand-off
voltage
V (BR) (Volts)(1)
reverse
leakage
at VWM
peak
pulse
clamping
voltage
Device type
V
WM
current
at IPPM
VC (Volts)
I
T
(mA)
(Volts)
I
D
(3) (uA)
I
PPM(2) (A)
(% /℃)
Min.
Max.
EC76P4KE51
45.9
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.4
5.7
5.0
5.2
4.5
4.7
4.1
4.3
3.7
3.9
3.4
3.5
3.1
3.2
2.8
2.9
2.5
2.6
2.3
2.4
2.1
2.2
1.9
1.9
1.7
1.8
1.6
1.7
1.6
1.6
1.4
1.5
1.2
1.2
1.1
1.2
0.93
1.0
0.79
0.83
0.70
0.73
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
EC76P4KE51A
EC76P4KE56
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
EC76P4KE56A
EC76P4KE62
EC76P4KE62A
EC76P4KE68
EC76P4KE68A
EC76P4KE75
EC76P4KE75A
EC76P4KE82
EC76P4KE82A
EC76P4KE91
EC76P4KE91A
EC76P4KE100
EC76P4KE100A
EC76P4KE110
EC76P4KE110A
EC76P4KE120
EC76P4KE120A
EC76P4KE130
EC76P4KE130A
EC76P4KE150
EC76P4KE150A
EC76P4KE160
EC76P4KE160A
EC76P4KE170
EC76P4KE170A
EC76P4KE180
EC76P4KE180A
EC76P4KE200
EC76P4KE200A
EC76P4KE220
EC76P4KE220A
EC76P4KE250
EC76P4KE250A
EC76P4KE300
EC76P4KE300A
EC76P4KE350
EC76P4KE350A
EC76P4KE400
EC76P4KE400A
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
Breakdown
voltage
Maximum Maximum Maximum
Maximum
temperature
coefficient
of VBR
Test
current
at
Stand-off
voltage
reverse
leakage
at VWM
peak
pulse
clamping
voltage
V (BR) (Volts)(1)
Device type
VWM
current
at IPPM
I
T
(mA)
(Volts)
I
D
(3) (uA)
I
PPM(2) (A)
V
C
(Volts)
(% /℃)
Min.
456
Max.
EC76P4KE480A
EC76P4KE510A
EC76P4KE530A
EC76P4KE540A
EC76P4KE550A
EC76P4KE480A
EC76P4KE510A
EC76P4KE530A
EC76P4KE540A
EC76P4KE550A
EC76P4KE480A
EC76P4KE510A
EC76P4KE530A
EC76P4KE540A
EC76P4KE550A
504
535
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
408
434
450
459
467
408
434
450
459
467
408
434
450
459
467
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.61
0.57
0.55
0.54
0.52
0.61
0.57
0.55
0.54
0.52
0.61
0.57
0.55
0.54
0.52
658
698
725
740
760
658
698
725
740
760
658
698
725
740
760
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
485
503.5
513
556.5
567
522.5
456
577.5
504
485
535
503.5
513
556.5
567
522.5
456
577.5
504
485
535
503.5
513
556.5
567
522.5
577.5
Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
Typical Performance Curves
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
EC76P4KEXXX
Order Information
EC76P4KE xxx C A
5% Voltage Tolerance (without A, 5% Voltage tolerance)
Stand off Voltage
Bi-directional (without C, Uni-direction)
Device
Package
Net Weight
Carrier
Quantity
HSF Status
EC76P4KEXXXA
0.300g
Tape & Box
3000pcs/reel
RoHS compliant
DO-204AL(DO-41)
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
5A19N Rev.F001
相关型号：
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