EP3545ETTSC-14.745M [ECLIPTEK]

CMOS, Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD);
EP3545ETTSC-14.745M
型号: EP3545ETTSC-14.745M
厂家: Ecliptek    Ecliptek
描述:

CMOS, Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD) Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD)

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Ecliptek | EP35 Series Oscillator  
http://www.ecliptek.com/oscillators/EP35/  
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Home  
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EP35 Series Oscillator  
Quartz Crystal Clock Oscillators XO (SPXO) HCMOS/TTL (CMOS) 5.0Vdc 4 Pad 3.2mm x 5.0mm Ceramic Surface Mount (SMD)  
2011/65 +  
168 SVHC  
2015/863  
Revision G 02/27/2015  
ectrical Specifications  
Nominal Frequency  
1.000MHz to 125.000MHz  
Some frequencies within this range may not be available.  
requency Tolerance/Stability  
(Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency  
Stability over the Operating Temperature Range, Supply Voltage  
Change, Output Load Change, First Year Aging at 25°C, Shock, and  
Vibration)  
±100ppm Maximum  
±50ppm Maximum  
Operating Temperature Range  
-20°C to +70°C  
-40°C to +85°C  
upply Voltage (V  
nput Current  
)
5.0V  
±10%  
DC  
DD  
45mA Maximum (Unloaded)  
IOH = -16mA  
Output Voltage Logic High (V  
)
OH  
V
-0.4V  
Minimum at Output Logic Type of CMOS  
DD  
2.4V  
DC  
Minimum at Output Logic Type of TTL  
DC  
Output Voltage Logic Low (V  
Duty Cycle  
)
IOL = +16mA  
0.4V Maximum  
OL  
DC  
Measured at 1.4V  
Load  
with TTL Load or 50% of waveform with HCMOS  
DC  
50 ±10(%)  
50 ±5(%) (Not available with Output Logic Type of TTL over Nominal  
Frequency of 27.000001MHz to 125MHz; Not available with Output  
Logic Type of CMOS over Nominal Frequency of 50.000001MHz to  
125MHz)  
ise Time/Fall Time  
oad Drive Capability  
4nSec Maximum (Measured at 20% to 80% of waveform) at Output  
Logic Type of CMOS  
4nSec Maximum (Measured at 0.8V  
to 2.0V ) at Output Logic Type  
DC  
DC  
of TTL  
50pF HCMOS Load Maximum over Nominal Frequency of 1MHz to  
50MHz at Output Logic Type of CMOS  
15pF HCMOS Load Maximum over Nominal Frequency of  
50.000001MHz to 125MHz at Output Logic Type of CMOS  
10TTL Load Maximum over Nominal Frequency of 1MHz to 40MHz at  
Output Logic Type of TTL  
5TTL Load Maximum over Nominal Frequency of 40.000001MHz to  
125MHz at Output Logic Type of TTL  
Output Logic Type  
in 1 Connection  
CMOS  
TTL  
Power Down (Disabled Output: Logic Low)  
Tri-State (Disabled Output: High Impedance)  
in 1 Input Voltage (Vih and Vil)  
+2.0V  
Minimum to enable output, +0.8V Maximum to disable  
DC  
DC  
output, No Connect to enable output.  
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tandby Current  
Disable Current  
50µA Maximum (Pin 1 = Ground)  
30mA Maximum (Pin 1 = Ground)  
bsolute Clock Jitter  
±250pSec Maximum, ±100pSec Typical over Nominal Frequency of  
1MHz to 33MHz  
±100pSec Maximum, ±50pSec Typical over Nominal Frequency of  
33.000001MHz to 125MHz  
One Sigma Clock Period Jitter  
±50pSec Maximum over Nominal Frequency of 1MHz to 33MHz  
±30pSec Maximum over Nominal Frequency of 33.000001MHz to  
125MHz  
ging (at 25°C)  
±5ppm/year Maximum  
-55°C to +125°C  
torage Temperature Range  
tart Up Time  
10mSec Maximum  
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echanical Dimensions  
Dimensions in Millimeters  
1: Power Down (Logic Low) or Tri-State (High Impedance)  
2: Ground/Case Ground  
3: Output  
4: Supply Voltage  
arking Specifications  
e 1:  
E XXXXXX  
E = Ecliptek Designator  
XXXXXX = Nominal Frequency in MHz (5 Digits + Decimal)  
e 2:  
XXXXX  
XXXXX = Ecliptek Manufacturing Identifier  
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vironmental and Mechanical Specifications  
e Leak Test  
MIL-STD-883, Method 1014, Condition A  
MIL-STD-883, Method 1014, Condition C  
MIL-STD-202, Method 213, Condition C  
MIL-STD-202, Method 210  
oss Leak Test  
chanical Shock  
sistance to Soldering Heat  
sistance to Solvents  
lderability  
MIL-STD-202, Method 215  
MIL-STD-883, Method 2003  
mperature Cycling  
bration  
MIL-STD-883, Method 1010  
MIL-STD-883, Method 2007, Condition A  
40°C/W (degrees Celsius per Watt)  
14°C/W (degrees Celsius per Watt)  
ermal Resistance (θ  
ermal Resistance (θ  
)
)
JA  
JC  
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pe & Reel Dimensions  
00 pieces per reel  
mpliant to EIA-481  
Dimensions in Millimeters  
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L Test Circuit  
te 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency ceramic bypass  
pacitor close to the package ground and V pin is required.  
DD  
te 2: A low input capacitance (<12pF), 10X Attentuation Factor, High Impedance (>10Mohms), and High bandwidth  
300MHz) passive probe is recommended.  
te 3: Capacitance value C includes sum of all probe and fixture capacitance.  
L
te 4: Resistance value R is shown in Table I. See applicable specification sheet for ‘Load Drive Capability’.  
L
te 5: All diodes are MMBD7000, MMBD914, or equivalent.  
MOS Test Circuit  
te 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency ceramic bypass  
pacitor close to the package ground pin is required.  
te 2: A low input capacitance (<12pF), 10X Attentuation Factor, High Impedance (>10Mohms), and High bandwidth  
300MHz) passive probe is recommended.  
te 3: Capacitance value includes sum of all probe and fixture capacitance. See applicable specification sheet for ‘Load  
ve Capability’.  
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commended Solder Pad Dimensions  
erances = ±0.1  
Dimensions in Millimeters  
7 of 10  
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lder Reflow Profile  
h Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
3°C/second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
150°C  
S
Temperature Typical (T TYP)  
175°C  
S
Temperature Maximum (T MAX)  
200°C  
S
Time (t )  
60 - 180 Seconds  
3°C/second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
217°C  
L
Time (t )  
60 - 150 Seconds  
260°C Maximum for 10 Seconds Maximum  
250°C +0/-5°C  
L
ak Temperature (T )  
P
rget Peak Temperature (T Target)  
P
me within 5°C of actual peak (t )  
P
20 - 40 seconds  
mp-down Rate  
6°C/second Maximum  
8 minutes Maximum  
Level 1  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
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w Temperature Infrared/Convection  
te: Temperatures shown are applied to body of  
vice.  
MAX to T (Ramp-up Rate)  
5°C/second Maximum  
L
eheat  
Temperature Minimum (T MIN)  
N/A  
S
Temperature Typical (T TYP)  
150°C  
S
Temperature Maximum (T MAX)  
N/A  
S
Time (t )  
60 - 120 Seconds  
5°C/second Maximum  
S
mp-up Rate (T to T )  
L
P
me Maintained Above:  
Temperature (T )  
150°C  
L
Time (t )  
200 Seconds Maximum  
L
ak Temperature (T )  
240°C Maximum  
P
rget Peak Temperature (T Target)  
240°C Maximum 2 Times / 230°C Maximum 1 Time  
10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time  
P
me within 5°C of actual peak (t )  
P
mp-down Rate  
5°C/second Maximum  
me 25°C to Peak Temperature (t)  
oisture Sensitivity Level  
N/A  
Level 1  
h Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
0°C Maximum for 5 seconds Maximum, 2 times Maximum.  
w Temperature Manual Soldering  
te: Temperatures listed are applied to body of device.  
5°C Maximum for 10 seconds Maximum, 2 times Maximum.  
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2 - Next Page  
Select the parameters that meet your requirements and then click  
Next  
Access these Part Number specific  
resources and tools  
Frequency in  
egahertz (1 to 125):  
me frequencies within this  
ange may not be available  
Frequency  
Tolerance/Stability:  
Operating  
Temperature Range:  
Duty Cycle:  
Pin 1 Connection:  
Output Logic Type:  
Packaging Options:  
rt Numbering Guide  
TOOLS  
PRODUCT  
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